Publications

Affichage de 12661 à 12670 sur 16106


  • Article dans une revue

Phonon instability in nanocrystalline silicon carbide

F. Cleri, T. Noda

physica status solidi (b), 2006, 243, pp.122-124. ⟨hal-00127852⟩

  • Communication dans un congrès

Simultaneous transmission over perfluorinated graded index polymer optical fibre and glass optical fibre of 1.25 gigabit ethernet signal and narrow band cellular signal using the coarse wavelength division multiplexing technique

C. Lethien, A. Goffin, C. Sion, Christophe Loyez, Jean-Pierre Vilcot

International Conference on Organic Photonics and Electronics 2006 and 9th International Conference on Organic Nonlinear Optics, ICONO 9 - ICOPE 2006, 2006, Brugge, Belgium. ⟨hal-00130885⟩

  • Communication dans un congrès

Performance of IR-UWB at 60 GHz for ad hoc networks with directive antennas

H. El Ghannudi, Laurent Clavier, A. Bendjaballah, A. Boé, P.A. Rolland

2006, 6 pp. ⟨hal-00147517⟩

  • Autre publication scientifique

Conception et réalisation de commutateurs MEMS millimétriques pour antennes intelligentes

A. Boé

2006. ⟨hal-00138924⟩

  • Communication dans un congrès

Caractérisation de nanofils de Si par sonde atomique tomographique

R. Lardé, J. Houard, E. Cadel, P. Pareige, D. Hourlier, D. Stievenard

10èmes Journées de la Matière Condensée, 2006, Toulouse, France. ⟨hal-00243976⟩

  • Communication dans un congrès

Raman spectroscopy and AFM characterization on individual Si-based nanowires

M. Marczak, M. Zdrojek, W. Gebicki, C. Jastrzebski, Thierry Melin, D. Hourlier

European Material Research Society Spring Meeting, E-MRS - IUMRS - ICEM 06, Symposium E : Science and Technology of Nanotubes and Nanowires, 2006, Nice, France. ⟨hal-00243973⟩

  • Communication dans un congrès

Catalytic growth of silicon nanowires supported on high surface oxide substrates

D. Hourlier, P. Lefebvre, A. Addad, R.N. Vannier, P. Perrot

Matériaux 2006, 2006, Dijon, France. ⟨hal-00243979⟩

  • Communication dans un congrès

Can InAlN/GaN be an alternative to high power/high temperature AlGaN/GaN devices ?

F Medjdoub, J.F. Carlin, M. Gonschorek, E. Feltin, M.A. Py, D. Ducatteau, Christophe Gaquière, N. Grandjean, E. Kohn

IEEE International Electron Devices Meeting, IEDM 2006, 2006, United States. pp.673-676, ⟨10.1109/IEDM.2006.346935⟩. ⟨hal-00247419⟩

  • Communication dans un congrès

Temperature analysis of AlGaN/GaN high-electron-mobility transistors using micro-Raman scattering spectroscopy and transient interferometric mapping

E. Pichonat, J. Kuzmik, S. Bychikhin, D. Pogany, M.A. Poisson, B. Grimbert, Christophe Gaquière

1st European Microwave Integrated Circuits Conference, EuMIC 2006, 2006, United Kingdom. pp.54-57, ⟨10.1109/EMICC.2006.282748⟩. ⟨hal-00247418⟩