Publications

• Communication dans un congrès

A Closed-Form Formulation for the Total Power Radiated by a Single-Wire Overhead Line

Andrea Cozza, Flavio G. Canavero, Bernard Démoulin

A new analytical solution for the total power radiated by a single-wire line over a ground-plane is here proposed, for the special case of a lossless complex exponential current-distribution. The line is not assumed to be electrically short or “closed”, thus being suitable for assessing the…

16th International Symposium on Electromagnetic Compatibility, EMC Zurich, Feb 2005, Switzerland. pp.529-534. ⟨hal-00518347⟩

• Article dans une revue

11% efficiency 100 GHz InP-based heterostructure barrier varactor quintupler

T. Bryllert, A. Olsen, J. Vukusic, T.A. Emadi, M. Ingvarson, J. Stake, D. Lippens

A record conversion efficiency of 11.4% at 100 GHz using a heterostructure barrier varactor (HBV) quintupler is demonstrated. The quintupler is based on a microstrip circuit mounted in a full-height crossed-waveguide block. The nonlinear element consists of a planar HBV diode fabricated in InGaAs/…

Electronics Letters, 2005, 41 (3), pp.131-132. ⟨10.1049/el:20057633⟩. ⟨hal-00154899⟩

• Chapitre d'ouvrage

Nanoélectronique : un passeport pour le nanomonde

O. Vanbesien

Techniques de l'Ingénieur, TI Sciences et Techniques, Paris, France, pp.RE-32, 2005. ⟨hal-00132086⟩

• Article dans une revue

Strained heteroepitaxy on nanomesas: a way toward perfect lateral organization of quantum dots

Maxime Bavencoffe, Eglantine Houdart, Catherine Priester

Journal of Crystal Growth, 2005, 275 (1-2), pp.305-316. ⟨10.1016/j.jcrysgro.2004.10.145⟩. ⟨hal-02112564⟩

• Article dans une revue

Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps

Y. Guhel, B. Boudart, N. Vellas, Christophe Gaquière, E. Delos, D. Ducatteau, Z. Bougrioua, Marie Germain

Solid-State Electronics, 2005, 49, pp.1589-1594. ⟨hal-00154914⟩

• Article dans une revue

Fabrication and characterization of 100-nm In0.53Ga0.47As-In0.52Al0.48As double-gate HEMTs with two separate gate controls

Nicolas Wichmann, I. Duszynski, X. Wallart, S. Bollaert, A. Cappy

IEEE Electron Device Letters, 2005, 26, pp.601-603. ⟨hal-00154894⟩

• Communication dans un congrès

Modal waves solved in complex wave number

Wei-Jiang Xu, Frédéric Jenot, Mohamed Ourak

2005, pp.156-163. ⟨hal-00140395⟩

• Communication dans un congrès

Characterization and modeling of in-vehicle power line propagation channel

M. Olivas-Carrion, Virginie Degardin, M. Lienard, Pierre Degauque

Proceedings of the 5th International Conference on ITS Telecommunications, ITST 2005, 2005, Brest, France. ⟨hal-00140789⟩

• Communication dans un congrès

Surface polarization enhancement and switching properties of small ferroelectric particles

Laurent Baudry

We have studied the polarization switching in ferroelectric particles by using a time dependent Ginzburg Landau model. The surface effect is described by considering the polarization enhancement towards the surface. The influence of this phenomena and related bound charges field on switching…

IMF-11, Sep 2005, Iguassu Falls, Brazil. pp.IMF-01-015, ⟨10.1080/00150190600678681⟩. ⟨hal-00131106⟩

• Article dans une revue

Reactive ion etching of a 20 nanometers tungsten gate using a SF$_6$/N$_2$ chemistry and hydrogen silsesquioxane hard mask resist

G. Larrieu, Emmanuel Dubois

This article reports on a direct method for patterning a tungsten gate in the decananometric range using high-resolution electron-beam lithography and reactive ion etching (RIE). Electron-beam lithography is based on the use of hydrogen silsesquioxane for its remarkable properties as a negative-…

Journal of Vacuum Science and Technology, 2005, 23 (5), pp.2046-2050. ⟨10.1116/1.2050654⟩. ⟨hal-00125635⟩