Publications

• Communication dans un congrès

Terahertz emission and noise spectra in HEMTs

J. Mateos, S. Perez, D. Pardo, T. Gonzalez, J. Lusakowski, N. Dyakonova, W. Knap, S. Bollaert, Yannick Roelens, A. Cappy, J.F. Millithaler, L. Varani

Terahertz emission and noise spectra in HEMTs, L. Reggiani, 2005, Lecce, Italy. pp.423-430, ⟨10.1063/1.2138647⟩. ⟨hal-00154897⟩

• Article dans une revue

Modeling of electron-electron scattering in Monte Carlo simulation of quantum cascade lasers

Olivier Bonno, Jean-Luc Thobel, François Dessenne

A theoretical model of electron–electron scattering in multisubband systems is proposed and used to set up a Monte Carlo simulator of quantum cascade lasers. Special features of the electron–electron scattering model are the following: sid A fast and accurate computation of bare potential matrix…

Journal of Applied Physics, 2005, 97, pp.043702. ⟨10.1063/1.1840100⟩. ⟨hal-00125349⟩

• Article dans une revue

Propagation of Lamb waves in a plate with a periodic grating : interpretation by phonon

D. Leduc, Anne-Christine Hladky, B. Morvan, L. Izbicki, P. Pareige

Journal of the Acoustical Society of America, 2005, 118, pp.2234-2239. ⟨hal-00124476⟩

• Article dans une revue

High power and linearity performances of gallium nitride HEMT devices on sapphire substrate

M. Werquin, Christophe Gaquière, Y. Guhel, N. Vellas, D. Theron, B. Boudart, Virginie Hoel, Marie Germain, Jean-Claude de Jaeger, S. Delage

The benefit of high drain-source bias voltages of GaN devices on sapphire substrates for high linearity applications is demonstrated. Whatever the output power densities considered, the corresponding intermodulation ratio is at least 20 dB better than usual PHEMT devices on GaAs substrates for the…

Electronics Letters, 2005, 41 (1), ⟨10.1049/el:20056735⟩. ⟨hal-01646906⟩

• Communication dans un congrès

Low power 23 GHz and 27 GHz distributed cascode amplifiers in a standard 130 nm SOI CMOS process

C. Pavageau, A. Siligaris, L. Picheta, Francois Danneville, M. Si Moussa, J.P. Raskin, D. Vanhoenacker-Janvier, J. Russat, N. Fel

2005, pp.2243-2246. ⟨hal-00125311⟩

• Communication dans un congrès

Hydrous profile modeling in porous materials from reflection coefficient measurement at 2.45 GHz

D. Glay, T. Lasri

2005, pp.206-213. ⟨hal-00125334⟩

• Autre publication scientifique

Utilisation des technologies CMOS SOI 130 nm pour des applications en gamme de fréquences

C. Pavageau

2005. ⟨hal-00126201⟩

• Autre publication scientifique

Réalisation et caractérisation de transistors HEMTs AlInAs/GaInAs de longueur de grille sub-50 nanomètres et de transistors sans couche tampon

I. Duszynski

2005. ⟨hal-00126203⟩

• Article dans une revue

Scanning tunneling microscopy and spectroscopy of reconstructed Si(100) surfaces

M. Dubois, Luis Perdigao, Christophe Delerue, Guy Allan, B. Grandidier, D. Deresmes, Didier Stiévenard

We combine theory and experiments to study bias-dependent scanning tunneling microscopy (STM) images of the different reconstructions of Si(100) surfaces. Coupling with the analysis of scanning tunneling spectroscopy (STS) data, we show that STM images result from a subtle interplay between…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2005, 71, pp.165322-1-10. ⟨10.1103/PhysRevB.71.165322⟩. ⟨hal-00126420⟩

• Communication dans un congrès

Spectroscopie de nanocristaux de semiconducteurs : enjeux récents, études théoriques

Christophe Delerue, Guy Allan

Congrès général de la Société Française de Physique, 2005, Lille, France. ⟨hal-00126454⟩