Publications
Affichage de 13801 à 13810 sur 15761
Double-gate HEMTs on transferred substrate
Nicolas Wichmann, I. Duszynski, T. Parenty, S. Bollaert, J. Mateos, X. Wallart, A. Cappy
2003, pp.118-121. ⟨hal-00145995⟩
Ballistic nanodevices for terahertz data processing : Monte Carlo simulations
J. Mateos, B.G. Vasallo, D. Pardo, T. Gonzales, Yannick Roelens, S. Bollaert, A. Cappy
Nanotechnology, 2003, 14, pp.117-122. ⟨hal-00145979⟩
Lead Zirconate Titanate (PZT) Films Deposited by a Hydrothermal Method
Sébastien Euphrasie, Sylvie Daviero-Minaud, Philippe Pernod
Solid State Sciences, 2003, 5 (11-12), pp.1499-1504. ⟨hal-00258427⟩
Nonlinear electron transport in InGaAs/InAlaS ballistic devices
Benoit Hackens, L. Gence, Sébastien Faniel, Cédric Gustin, Hervé Boutry, Lukasz Bednarz, Isabelle Huynen, Vincent Bayot, X. Wallart, A. Cappy, Javier Mateos, Tomás González
Trends in NanoTechnology, TNT 2003, Sep 2003, Salamanca, Spain. ⟨hal-00146041⟩
MBE growth of AlGaN/GaN HEMTs on resistive Si (111) substrate with RF small signal and power performances
Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, Virginie Hoel, A. Minko, N. Vellas, Christophe Gaquière, Jean-Claude de Jaeger, B. Dessertenne, S. Cassette, Et Al.
Journal of Crystal Growth, 2003, 251, pp.811-815. ⟨hal-00146661⟩
Influence on the step covering on fatigue phenomenon for polycrystalline silicon MEMS
O. Millet, Bernard Legrand, D. Collard, L. Buchaillot
Japanese Journal of Applied Physics, 2003, 41, pp.L1339-L1341. ⟨hal-00146435⟩
LP-MOCVD growth of GaAlN/GaN heterostructures on silicon carbide
Marie-Antoinette Di Forte-Poisson, Maurice Tordjman, A. Romann, M. Magis, Raphaël Aubry, Sylvain Laurent Delage, J. Di Persio, B. Grimbert, Christophe Gaquière
Proceedings of the Fifth International Conference on Nitride Semiconductors, ICNS-5, 2003, Nara, Japan. ⟨hal-00146685⟩
Feedback of MEMS reliability study on the design stage : a step toward reliability aided design (RAD)
L. Buchaillot
Microelectronics Reliability, 2003, 43, pp.1919-1928. ⟨hal-00146437⟩
Non-linear phenomenological model for RF advanced MOSFET
A. Siligaris, Gilles Dambrine, Sylvie Lepilliet, D. Schreurs, Francois Danneville
European IC-CAP User Meeting, 2003, Prague, Czech Republic. ⟨hal-00146016⟩
Etude physique du phénomène de claquage par avalanche dans les transistors à effet de champ
M. Elkhou, Michel Rousseau, Jean-Claude de Jaeger
2003, pp.2D-21. ⟨hal-00146663⟩