Publications

• ART

Prediction of the reflection coefficient of shallow buried objects by a microwave technique

Latifa Achrait-Furlan, T. Lasri, Ahmed Mamouni

In this paper, we propose a low-cost microwave technique to characterize shallow subsurface objects. Experiments and simulations are carried out to explore the possibility of predicting the reflection coefficient, according to one or two dimensions, of buried structures. High and low contrasts…

Microwave and Optical Technology Letters, 2004, 42, pp.335-339. ⟨hal-00133925⟩

• COMM

Noise modeling and performance of SOI MOSFETs

Francois Danneville, G. Pailloncy, B. Iniguez, J.P. Raskin, Gilles Dambrine

IEEE MTT-S International Microwave Symposium, Workshop on High Frequency Noise in Advanced Silicon-based Devices : From Basics to State-of-the-Art Device and Circuit Performances, 2004, Fort Worth, TX, United States. ⟨hal-00133912⟩

• COMM

Transmission on indoor power lines : from a stochastic channel model to the optimization and performances evaluation of multicarrier systems

Virginie Degardin, M. Lienard, Pierre Degauque

COST 286 Meeting, 2004, Liège, Belgium. ⟨hal-00142018⟩

• COMM

Dual antenna array systems in tunnels : propagation channel properties

M. Lienard, Pierre Degauque

IEEE International Symposium on Antennas and Propagation, 2004, Monterey, CA, United States. ⟨hal-00142020⟩

• ART

Two-photon absorption in InP substrates in the 1.55 µm range

D. Vignaud, Jean-Francois Lampin, F. Mollot

Applied Physics Letters, 2004, 85, pp.239. ⟨hal-00018568⟩

• ART

Schottky-barrier source/drain MOSFETs on ultra-thin silicon-on-insulator body with a tungsten metallic midgap gate

G. Larrieu, Emmanuel Dubois

This letter presents a simple low-temperature process to fabricate Schottky-barrier (SB) MOSFETs that integrates a midgap metallic gate (tungsten). The device architecture is based on a thin (10 nm) and lowly doped silicon-on-insulator film that provides a threshold voltage of -0.3 V independent on…

IEEE Electron Device Letters, 2004, 25, pp.801-803. ⟨10.1109/LED.2004.838053⟩. ⟨hal-00140981⟩

• COMM

Systems conception and adaptative calibration technique for S-parameters measurement at 35 GHz

Kamel Haddadi, M. Maazi, D. Glay, T. Lasri

2004, pp.Session 4A. ⟨hal-00142280⟩

• COMM

Analytical transport model of AlGaN/GaN HEMT based on electrical and thermal measurement

Jean-Claude Jacquet, Raphaël Aubry, H. Gerard, E. Delos, Nathalie Rolland, Yvon Cordier, A. Bussutil, Michel Rousseau, Sylvain Laurent Delage

GaN and its related alloys constitute a family of wide bandgap semiconductors suitable to optoelectronics and power microwave applications. For the latter applications, their high breakdown fields in the 3MV/cm range and their high peak electron velocity above 107cm/s are crucial. The high electron…

12th European Gallium Arsenide and other compound semiconductors application symposium, Oct 2004, Amsterdam, Netherlands. pp.235-238. ⟨hal-00142308⟩

• COMM

Radiation of directional seismic sources within a layered half-space

Madjid Berraki, Bertrand Dubus, Axelle Baroni

Congrès Français d'Acoustique CFA, Mar 2004, Strasbourg, France. pp.145-146. ⟨hal-00142047⟩

• COMM

Acoustic wave propagation in functionally graded material (FGM) cylinders

L. Elmaimouni, Jean-Etienne Lefebvre, Tadeusz Gryba, V. Zhang

2004, pp.1199-1200. ⟨hal-00142049⟩