Publications
Affichage de 13871 à 13880 sur 16261
100nm InAlAS/InGaAs double-gate HEMT using transferred substrate
Nicolas Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, A. Cappy
2004, pp.1023-1026. ⟨hal-00133886⟩
Organic field effect transistors : towards molecular scale
G. Horowitz, F. Biscarini, D. Vuillaume
Elsevier, 177 p., 2004. ⟨hal-00133401⟩
On-wafer high frequency noise power measurements under cryogenic conditions : a new de-embedding approach [HEMT example]
S. Delcourt, Gilles Dambrine, Nour Eddine Bourzgui, Sylvie Lepilliet, C. Laporte, J.P. Fraysse, M. Maignan
2004, pp.913-916. ⟨hal-00154887⟩
Premiers résultats de la campagne de sismique réflexion de haute résolution dans les zones affaissées d'un secteur minier du Pas-de-Calais
F. Barrez, J. Mania, J.L. Mansy, F. Meilliez, Bogdan Piwakowski, Brigitte van Vliet-Lanoë
Actes des Journées Nationales de Géotechnique et de Géologie de l'Ingénieur, JNGGI 2004, 2004, Lille, France. ⟨hal-00247820⟩
A computational model for the Si/C/N nanopowder
Mohamed Amara, M. El Ganaoui, D. Hourlier
21st International Congress of Theoretical and Applied Mechanics, ICTAM04, 2004, Warsaw, Poland. ⟨hal-00248023⟩
Application of PZT-film-Si-substrate structures for various types of position sensitive pyroelectric detectors of radiation
S. Bravina, Eric Cattan, N. Morozovsky, Denis Remiens
Pandalai S.G. Recent Research Developments in Applied Physics, Vol. 7, Part I, Research Signpost, Kerala, India, pp.177-196, 2004. ⟨hal-00139043⟩
Caractérisation de films d'alcènes greffés sur des surfaces Si(111) par analyse XPS résolue angulairement
X. Wallart, C. Henry de Villeneuve, P. Allongue
2004, pp.152-157. ⟨hal-00140723⟩
Effects of grain boundaries, field dependent mobility and interface state traps on the characteristics of pentacene thin film transistor
A. Bolognesi, M. Berliocchi, M. Manenti, Aldo Di Carlo, Paolo Lugli, Kamal Lmimouni, Claude Dufour
IEEE Transactions on Electron Devices, 2004, 51 (12), pp.1997-2003. ⟨10.1109/TED.2004.838333⟩. ⟨hal-00140735⟩
A micro-nib nanoelectrospray source for mass spectrometry
S. Arscott, S. Le Gac, C. Druon, P. Tabourier, C. Rolando
Sensors and Actuators B: Chemical, 2004, 98 (2-3), pp.140-147. ⟨hal-00140771⟩
Influence of passivation on high-power AlGaN/GaN HEMT devices at 10 GHz
D. Ducatteau, M. Werquin, Christophe Gaquière, D. Theron, T. Martin, E. Delos, B. Grimbert, E. Morvan, N. Caillas, Virginie Hoel, Jean-Claude de Jaeger, S. Delage
2004, pp.203-206. ⟨hal-00142304⟩