Publications

Affichage de 1471 à 1480 sur 16135


  • Communication dans un congrès

Deep-Covid-SEV: an Ensemble 2D and 3D CNN-Based Approach for Covid-19 Severity Prediction from 3D CT-SCANS

Fares Bougourzi, Fadi Dornaika, Amir Nakib, Cosimo Distante, Abdelmalik Taleb-Ahmed

Since the advent of Covid-19 in late 2019, medical image analysis with artificial intelligence (AI) has become an important research topic. CT-scan imaging is an important diagnostic tool for this disease. This study is part of the 3rd COV19D competition for Covid-19 Severity Prediction, where we…

2023 IEEE International Conference on Acoustics, Speech, and Signal Processing Workshops (ICASSPW), Jun 2023, Rhodes Island, Greece. pp.1-5, ⟨10.1109/ICASSPW59220.2023.10192927⟩. ⟨hal-04182463⟩

  • Article dans une revue

Reduction of helium permeation in microfabricated cells using aluminosilicate glass substrates and Al2O3 coatings

Clément Carlé, Shervin Keshavarzi, Andrei Mursa, Petri Karvinen, Ravinder Kumar Chutani, Sylwester Bargiel, Samuel Queste, Rémy Vicarini, Philippe Abbé, Moustafa Abdel Hafiz, Vincent Maurice, Rodolphe Boudot, Nicolas Passilly

The stability and accuracy of atomic devices can be degraded by the evolution of their cell inner atmosphere. Hence,<br /&gt the undesired entrance or leakage of background or buffer gas, respectively, that can permeate through the cell walls,<br /&gt should be slowed down. In this…

Journal of Applied Physics, 2023, 133, pp.214501 (7). ⟨10.1063/5.0151899⟩. ⟨hal-04224507⟩

  • Article dans une revue

Optimized emitter-base interface cleaning for advanced Heterojunction Bipolar Transistors

E. Brezza, F. Deprat, C. de Buttet, A. Gauthier, M. Gregoire, D. Guiheux, V. Guyader, M. Juhel, I. Berbezier, E. Assaf, L. Favre, P. Chevalier, Christophe Gaquière, N. Defrance

A B S T R A C T Heterojunction Bipolar Transistors needed for high-frequency applications require precise dopant control. Insitu doped epitaxies used during device fabrication rely on surface preparation to obtain an optimized doping profile. Defects due to imperfect cleaning relates to high…

Solid-State Electronics, 2023, 204, pp.108654. ⟨10.1016/j.sse.2023.108654⟩. ⟨hal-04084450⟩