Publications

• Article dans une revue

Material optimisation for AlGaN/GaN HFET applications

Z. Bougrioua, I. Moerman, N. Sharma, R.H. Wallis, J. Cheyns, K. Jacobs, E.J. Thrush, L. Considine, R. Beanland, J.-L. Farvacque, C. Humphreys

An optimisation of some growth parameters for the epitaxy of AlGaN–GaN based heterostructure field effect transistors (HFET) at low pressure in a new 3x2″ MOVPE reactor is presented. Some possible processes for the growth of semi-insulating buffers have been identified and are described. TEM…

Journal of Crystal Growth, 2001, 230 (3-4), pp.573-578. ⟨10.1016/S0022-0248(01)01303-3⟩. ⟨hal-02906506⟩

• Brevet

Transistor MOS pour circuits à haute densité d'intégration

Emmanuel Dubois

N° de brevet: FR2805395 (A1). 2001. ⟨hal-00372674⟩

• Article dans une revue

Static measurements of GaN MESFETs on (111) Si substrates

Virginie Hoel, Y. Guhel, B. Boudart, Christophe Gaquière, Jean-Claude de Jaeger, H. Lahreche, P. Gibart

For the first time, to the knowledge of the authors, GaN MESFETs on silicon substrate have been realised using low-pressure metal-organic vapour phase epitaxy. The devices demonstrate good pinch-off voltage and good breakdown voltage characteristics. A maximum extrinsic transconductance of 30 mS/mm…

Electronics Letters, 2001, 37 (17), pp.1095 - 1096. ⟨10.1049/el:20010740⟩. ⟨hal-02936047⟩

• Communication dans un congrès

S. Carnot’s Réflexions: a theory based on non–classical Logic

Raffaele Pisano

International ASL Logic Colloquium 2001, Wien, 6–11 August, Association for Symbolic Logic, Aug 2001, Wien, Austria, Austria. ⟨hal-04519710⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, R. Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q-3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight binding techniques. The rectification current depends on the…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64 (8), pp.085405. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00604397⟩

• Article dans une revue

Theory of electrical rectification in a molecular monolayer

Christophe Krzeminski, Christophe Delerue, Guy Allan, Dominique Vuillaume, Robert M Metzger

The current-voltage characteristics in Langmuir-Blodgett monolayers of γ-hexadecylquinolinium tricyanoquinodimethanide (C16H33Q−3CNQ) sandwiched between Al or Au electrodes is calculated, combining ab initio and self-consistent tight-binding techniques. The rectification current depends not only on…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2001, 64, pp.085405/1-6. ⟨10.1103/PhysRevB.64.085405⟩. ⟨hal-00152558⟩

• Proceedings/Recueil des communications

Photonic tunneling between two wires

Leonard Dobrzynski

Progress in Surface Science, 67 (1-8), pp.347-354, 2001, ⟨10.1016/S0079-6816(01)00035-1⟩. ⟨hal-04070883⟩

• Brevet

Procédé de régulation en température d'un système combinant une boucle fermée de régulation en température avec une boucle réalisée à partir d'une mesure de flux thermique

D. Leclercq, P. Godts, Etienne Gaviot, Frédéric Polet, F. Raucoules

France, N° de brevet: FR2804222 (A1). 2001. ⟨hal-00372672⟩

• Article dans une revue

Surface states in one-dimensional photonic band gap structures

B Djafari-Rouhani, E.H El Boudouti, Abdellatif Akjouj, Leonard Dobrzynski, J.O Vasseur, A Mir, N Fettouhi, J Zemmouri

Vacuum, 2001, 63 (1-2), pp.177-183. ⟨10.1016/S0042-207X(01)00188-9⟩. ⟨hal-04069889⟩

• Brevet

Resonant cavity antenna having a beam conformed according to a predetermined radiation diagram

Ronan Sauleau, Philippe Coquet, T. Matsui, J.P. Daniel

Patent n° : WO0152356. 2001. ⟨hal-00557818⟩