Publications

Affichage de 15511 à 15520 sur 16175


  • Article dans une revue

Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN

B. Boudart, S. Trassaert, X. Wallart, J.C. Pesant, O. Yaradou, D. Theron, Y. Crosnier, H. Lahreche, F. Omnes

Journal of Electronic Materials, 2000, 29, pp.603-606. ⟨hal-00158984⟩

  • Communication dans un congrès

Organic self-assembled monolayers on silicon : electronic properties and applications in nanoelectronics and molecular electronics devices

D. Vuillaume

Instituto di ellectronica dello stato solido, 2000, Roma, Italy. ⟨hal-00158486⟩

  • Communication dans un congrès

Nano-domain formation in binary self-assembled monolayers of alkysiloxanes on silicon

Laurent Breuil, Dominique Vuillaume

GDR Films Moléculaires Bidimensionnels, 2000, Obernai, France. ⟨hal-00158474⟩

  • Communication dans un congrès

Diagnosis of trapping phenomena in GaN MESFET's

G. Meneghesso, A. Chini, E. Zanoni, M. Manfredi, M. Pavesi, B. Boudart, Christophe Gaquière

2000, pp.389-392. ⟨hal-00159002⟩

  • Article dans une revue

A MEMS oriented distributed processor for integrated feed-back controller

Y. Mita, A. Kaiser, Patrick Garda, M. Milgram, H. Fujita

Electronics and Communications in Japan, Part 2 : Electronics, 2000, 83, pp.48-55. ⟨hal-00158498⟩

  • Communication dans un congrès

Enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34 HEMT on GaAs substrate

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

The Fourth International Conference of the Learning Sciences, Jun 2000, Ann Arbor, MI, United States. pp.IV-7, IV-8. ⟨hal-00159007⟩

  • Communication dans un congrès

Gate ionization current of an enhancement-mode metamorphic Al0.67In0.33As/Ga0.66In0.34As HEMT on GaAs substrate

Mustafa Boudrissa, Elisabet Delos, Yvon Cordier, Didier Theron, Jean-Claude de Jaeger

30th European Microwave Conferences, 2000, Paris, France. pp.90-93. ⟨hal-00159006⟩

  • Communication dans un congrès

A physically based modeling of boron TED in amporphised Si

E. Lampin, V. Senez, Alain Claverie

2000, pp.B10.4. ⟨hal-00158506⟩

  • Article dans une revue

Fabricating conductive microstructures by direct electron beam writing on hydrogenated n-type Si-doped GaAs

S. Silvestre, E. Constant, D. Bernard-Loridant, B. Sieber

Applied Physics Letters, 2000, 19, pp.2731-2733. ⟨hal-00158583⟩

  • Communication dans un congrès

Design and fabrication of a new optical switch for the synthesis of large time delays

Y. Hernandez, Jean-Pierre Vilcot, Joseph Harari, Didier Decoster, M. Schaller, J. Chazelas

2000, pp.X-15, X-16. ⟨hal-00158580⟩