Publications
Affichage de 1561 à 1570 sur 15761
Deep Learning-based receiver for Uplink in LoRa Networks with Sigfox Interference
Angesom Ataklity Tesfay, Eric Pierre Simon, Sofiane Kharbech, Laurent Clavier
IEEE 18th International Conference on Wireless and Mobile Computing, Networking and Communications, WiMob 2022, Oct 2022, Thessaloniki, Greece. pp.25-29, ⟨10.1109/WiMob55322.2022.9941543⟩. ⟨hal-03847016⟩
Asymmetric Design for a High‐Performance Indoor Radiative Heating Fabric
Mohamed Boutghatin, Yan Pennec, Bahram Djafari-Rouhani, Abdellatif Akjouj, Valérie Gaucher, Hayriye Gidik, Salim Assaf, Michèle Carette, V. Thomy
Advanced Materials Technologies, 2022, 7 (10), pp.2101738. ⟨10.1002/admt.202101738⟩. ⟨hal-03630726⟩
Sub-Micron thick Step-Graded AlGaN Buffer on Silicon with a Buffer Breakdown Field Higher Than 6 MV/cm
Elodie Carneiro, Stéphane Rennesson, S. Tamariz, Fabrice Semond, F Medjdoub
International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829087⟩
AlGaN channel high electron mobility transistors on bulk AlN substrate
Jash Mehta, Idriss Abid, Reda Elwaradi, Yvon Cordier, F Medjdoub
International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829060⟩
Comparison of AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/Si(111), Si(111) and 6H-SiC for RF applications
Marie Lesecq, Éric Frayssinet, Marc Portail, Micka Bah, Nicolas Defrance, Thi Huong Ngo, Mahmoud Abou Daher, Ali Abboud, Yassine Fouzi, Marcin Zielinski, Daniel Alquier, Jean-Claude de Jaeger, Yvon Cordier
International Workshop on Nitride Semi-conductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-04037282⟩
Combining low trapping effects and high electron confinement in sub-100 nm AlN/GaN HEMTs under high electric field
S Venkatachalam, Kathia Harrouche, François Grandpierron, Stefan Degroote, Marianne Germain, Joff Derluyn, F Medjdoub
International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829010⟩
[Invited] Process challenges and perspectives of vertical GaN power transistors on foreign substrates
Christian Huber, S. Regensburger, E. Bahat-Treidel, F Medjdoub, Jens Baringhaus
International Workshop on Nitride Semiconductors, IWN 2022, Oct 2022, Berlin, Germany. ⟨hal-03829109⟩
Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, Nicolas Wichmann, T. González, J. Mateos
Journal of Applied Physics, 2022, 132 (13), pp.134501. ⟨10.1063/5.0111114⟩. ⟨hal-03814081⟩
Image Style Transferred to Graphical User Interfaces
Karim Hammoudi, Adnane Cabani, Halim Benhabiles, Mahmoud Melkemi
2022. ⟨hal-03798607⟩
Scanning microwave microscopy for detecting mechanical vibrations of silicon nitride membranes
Hao Xu, Didier Theron, X Zhou
GDR-mecaQ, Oct 2022, Bordeaux (France), France. ⟨hal-04416081⟩