Publications

• Article dans une revue

Theory of surface and interface transverse elastic waves in N -layer superlattices

E. El Boudouti, B. Djafari-Rouhani, Abdellatif Akjouj, Leonard Dobrzynski

Physical Review B, 1996, 54 (20), pp.14728-14741. ⟨10.1103/PhysRevB.54.14728⟩. ⟨hal-04069559⟩

• Article dans une revue

PZT bulk acoustic wave resonators for MMIC technology

S. Arscott, Z. Awang, Y. Tu, S. Milne, R. Miles

Ferroelectrics, 1996, 187 (1), pp.49-56. ⟨10.1080/00150199608244843⟩. ⟨hal-02348161⟩

• Communication dans un congrès

Non-quasi-static SOI MOSFET model dedicated for analog circuit design

E. Robilliart, Emmanuel Dubois

1996 IEEE International SOI Conference Proceedings, Oct 1996, Sanibel Island, United States. pp.13-14, ⟨10.1109/SOI.1996.552470⟩. ⟨hal-04249085⟩

• Article dans une revue

Simple models of adsorbed polymers: Vibrational properties

P.A. Deymier, E. Oumghar, J.O. Vasseur, B. Djafari-Rouhani, Leonard Dobrzynski

Progress in Surface Science, 1996, 53 (2-4), pp.179-186. ⟨10.1016/S0079-6816(96)00015-9⟩. ⟨hal-04070888⟩

• Communication dans un congrès

A New Non-Quasi-Static SOI MOSFET Model Dedicated to Analog Circuit Simulation

Emmanuel Dubois

ESSDERC '96: Proceedings of the 26th European Solid State Device Research Conference, Sep 1996, Bologna (ITALY), Italy. ⟨hal-04248412⟩

• Article dans une revue

Monte Carlo calculations of hot‐carrier noise under degenerate conditions

P. Tadyszak, Francois Danneville, A. Cappy, L. Reggiani, L. Varani, L. Rota

Applied Physics Letters, 1996, 69 (10), pp.1450-1452. ⟨10.1063/1.117611⟩. ⟨hal-02390160⟩

• Communication dans un congrès

Accuracy and Convergence Properties of a One-Dimensional Numerical Non-Quasi-Static MOSFET’s Model for Circuit Simulation

E. Robilliart, Emmanuel Dubois

Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 1996, Tokyo, Japan. pp.179-180, ⟨10.1109/SISPAD.1996.865328⟩. ⟨hal-04249094⟩

• Article dans une revue

Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's

Dominique Vuillaume, A. Bravaix, D. Goguenheim, J.-C. Marchetaux, A. Boudou

For the original article see ibid., vol. 42, p. 1473 (1995). The commenters state that a clear proof of the generation of electron traps under hot-hole injections and a clear distinction from the effect of stress-induced interface states have been given by them in a paper (see ibid., vol. 40, p.…

Comment on "Hot-Hole induced negative oxide charges in N-MOSFET's". IEEE Transactions on Electron Devices, 1996, IEEE Transaction on Electron devices, 43 (9), pp.1473-1477. ⟨10.1109/16.535337⟩. ⟨hal-03022993⟩

• Thèse

Application de l'approche de la réponse impulsionnelle à la modélisation du rayonnement de transducteurs acoustiques de structure arbitraire, Application of the impulse response approach to the radiation modelling of arbitrarily structured transducers array

Khalid Sbai

Le travail effectué dans ce mémoire a conduit à l'élaboration d'un logiciel de simulation "DREAM" qui permet de calculer le champ acoustique rayonné par des transducteurs de surfaces planes et quasi-planes dont les ouvertures peuvent être structurées de manière quasi arbitraires…, The work done in this thesis has led to the development of simulation software "DREAM" to calculate the sound field radiated by transducers of flat surfaces and quasi-plane whose openings can be structured in an almost arbitrary. It takes into account all the characteristic parameters of…

Acoustique [physics.class-ph]. Université de Valenciennes et du Hainaut-Cambresis, 1996. Français. ⟨NNT : 1996VALE0023⟩. ⟨tel-00687979⟩

• Article dans une revue

Small- and large-signal measurements of low-temperature GaAs FETs

B. Boudart, Christophe Gaquière, S. Trassaert, Didier Theron, B. Splingart, M. Lipka, E. Kohn

Low-temperature (LT) GaAs FETs have been realized for high I × V products. They have been extensively characterized under dc, rf, pulsed, and large-signal conditions. The results are analyzed and related to the device structure. The electrical passivant role of the LT GaAs has been demonstrated.…

Microwave and Optical Technology Letters, 1996, 12 (2), pp.57 - 59. ⟨10.1002/(SICI)1098-2760(19960605)12:23.0.CO;2-M⟩. ⟨hal-01647683⟩