Publications

Affichage de 1771 à 1780 sur 15923


  • Communication dans un congrès

A Comparative Analysis of LoRa and LoRaWAN in the Presence of Jammers and Transient Interference

Artur de Sao Jose, Nathan Chopinet, Eric Pierre Simon, Alexandre Boé, Thomas Vantroys, Christophe Gransart, Virginie Deniau

There is a lack of studies about the susceptibility of LoRa networks to specific interference sources such as broadband jammers and the train catenary, which produces transient interference in a railway environment. In this paper, we investigate this topic by separately analyzing the proprietary…

2022 International Symposium on Electromagnetic Compatibility – EMC Europe, Sep 2022, Gothenburg, Sweden. pp.586-591, ⟨10.1109/EMCEurope51680.2022.9901081⟩. ⟨hal-04127533⟩

  • Communication dans un congrès

[Invited] From research to production: how MBE can unlock GaN-on-Si technology

Fabrice Semond, Stephanie Rennesson, Sébastian Tamariz, Elodie Carneiro, Jash Mehta, F Medjdoub

MBE has several advantages for the epitaxy of GaN-based heterostructures. More specifically, by controlling the interface between the AlN buffer layer and the silicon substrate, ammonia-MBE allows to grow innovative structures on silicon. Epitaxy on silicon necessarily requires a demonstration of…

The International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. ⟨hal-03828770⟩

  • Communication dans un congrès

Magnetization rotation-based polarization control of spintronic terahertz emitter

Pierre Kolejak, Geoffrey Lezier, Kamil Postava, Jean-Francois Lampin, Nicolas Tiercelin, Mathias Vanwolleghem

Recently, the terahertz family of sources increased by newly-developed terahertz spintronic emitter (STE), which competes with the traditional in many ways. This30THz-broadband gapless source is versatile due to its low-cost, easy implementation, frequency-independent excitation, and…

22nd Polish-Slovak-Czech Optical Conference on Wave and Quantum Aspects of Contemporary Optics, Sep 2022, Wojanów, Poland. pp.90-90, ⟨10.1117/12.2663659⟩. ⟨hal-03761377⟩

  • Communication dans un congrès

Experimental characterization of propagation in vehicular scenarios using the real-time Massive MIMO channel sounder MaMIMOSA

D.P. Gaillot, Pierre Laly, Eric Pierre Simon, N. Dahmouni, G. Delbarre, M. Lienard, J. Molins-Benlliure, M. Cabedo-Fabres, E. Antonino-Daviu, M. Ferrando, A. Mateo Aroca, J-M. Molina-Garcia-Pardo, L. Jofre

XXXVII Simposium Nacional de la Unien Cienteca Internacional de Radio, URSI 2022, Sep 2022, Malaga, Spain. ⟨hal-04543552⟩

  • Poster de conférence

RF Electronic conditionning for dynamic strain measurement using SAW resonator sensor.

Othmane Marbouh, Ghizlane Boussatour, Yannick Dusch, Aurelien Mazzamurro, Vincent Maurice, Philippe Pernod, Daniel Laloy, Khalid Ettihir, Olivier Bou Matar, Romain Viard, Abdelmounaïm Tounzi, Abdelkader Benabou, Abdelkrim Talbi

MNE EUROSENSORS, Sep 2022, Leuven (Belgium), Belgium. ⟨hal-04598424⟩

  • Poster de conférence

SAW resonator based MEMS gas sensor for the detection of volatile organic compounds.

Mohand Salah Moussa, Cécile Ghouila-Houri, Vincent Maurice, Ghizlane Boussatour, Othmane Marbouh, Hatem Dahmani, Aurelien Mazzamurro, Philippe Pernod, Abdelkrim Talbi

MNE EUROSENSORS, Sep 2022, Leuven (Belgique), Belgium. ⟨hal-04598432⟩

  • Communication dans un congrès

InSb thin films and selective area MBE grown nanostructures on InP(111)B substrate

Wijden Khelifi, Pierre Capiod, Christophe Coinon, Maxime Berthe, X. Wallart, B. Grandidier, L. Desplanque

The growth of InSb by molecular beam epitaxy on InP(111) substrate is investigated. We observe that a very large Sb/In flux ratio promotes the spreading of InSb, leading a rapid coalescence of initial 2D InSb islands and forming a smooth InSb layer after 100nm deposition. This growth mode is used…

International Conference on Molecular Beam Epitaxy (ICMBE) 2022, Sep 2022, Sheffield - UK, France. ⟨hal-04332162⟩

  • Communication dans un congrès

First attempts of WSe2 growth on GaP(111)B substrates by MBE

N. Chapuis, Christophe Coinon, D. Deresmes, G. Patriarche, D. Vignaud, X. Wallart

Few layers WSe2 are grown on GaP(111)B surfaces passivated by selenium. The layers remains 2D at low growth temperature (Tg = 200-250°C) while exhibiting the formation of the metastable 1T’ phase. Medium growth temperatures (400-550°C) lead to a poor crystalline surface quality. In both cases,…

International Conference on Molecular Beam Epitaxy (ICMBE 2022), Sep 2022, Sheffield, United Kingdom. 2 p. ⟨hal-04172997⟩

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