Publications

Affichage de 2021 à 2030 sur 16088


  • Article dans une revue

Breakdown mechanism of AlGaN/GaN HEMT on 200-mm silicon substrate with silicon implant-assisted contacts

Antoine Chanuel, Yveline Gobil, Chuan Lun Hsu, Matthew Charles, Marianne Coig, Jerome Biscarrat, Francois Aussenac, N. Defrance, Christophe Gaquière, Fred Gaillard, Erwan Morvan

We present an access technology suitable for scaled gallium nitride (GaN) high electron mobility transistor (HEMT) in Ka -band. The comparison between OFF-state characteristics of a silicon implant-assisted contact and a conventional recessed Ti/Al-based Ohmic contact is presented. The transistor…

IEEE Transactions on Electron Devices, 2022, 69 (10), pp.5530-5535. ⟨10.1109/TED.2022.3201837⟩. ⟨hal-03775876⟩

  • Chapitre d'ouvrage

9. Incremental deep learning model for plant leaf diseases detection

Salima Ouadfel, Wafa Mousser, Ismail Ghoul, Abdelmalik Taleb-Ahmed

In recent years, deep learning has revolutionized machine learning and has been used with great success in various engineering fields, such as transportation, agriculture, finance, and marketing. The interest in deep learning for such applications is due to its ability to manage gigantic volumes of…

Artificial Neural Networks for Renewable Energy Systems and Real-World Applications, Elsevier, pp.207-222, 2022, ⟨10.1016/B978-0-12-820793-2.00011-2⟩. ⟨hal-03882902⟩