2021 3rd International Conference on Sustainable Technologies for Industry 4.0 (STI), Dec 2021, Dhaka, Bangladesh. pp.1-4, ⟨10.1109/STI53101.2021.9732585⟩. ⟨hal-03663718⟩

Pré-publication, Document de travail

Condensation and Growth of Amorphous Aluminosilicate Nanoparticles by Aggregation Process

Romain Dupuis, Seung Ho Hahn, Adri C. T. van Duin, Roland Pellenq, Arnaud Poulesquen

The precipitation of zeolite nanoparticles involves the initial formation of metastable precursors such as amorphous entities that crystalize through non-classical pathways. Here, using reactive force field based simulations, we reveal how aluminosilicate oligomers grow concomitantly to the…

2021. ⟨hal-03484661⟩

Thèse

Functional metasurfaces controlled by Liquid crystals, Métasurfaces fonctionelles contrôlées par cristaux liquides

Racha Chamseddine

The main goal of this thesis was to dynamically control the reflectivity of a metasurface using LC technologies. The metasurfaces, tunable by voltage-controlled LC orientation, operate in a reflect-array mode and exhibit a high contrast ratio between quasi total absorption and low reflection,…, Le but principal de cette thèse a été de contrôler dynamiquement la réflectivité d’une métasurface par cristaux liquides. Les métasurfaces, dont les propriétés électromagnétiques sont contrôlées électriquement par l’orientation des molécules LC, fonctionnent en réflexion et présentent un très fort…

Micro and nanotechnologies/Microelectronics. Université de Lille, 2021. English. ⟨NNT : 2021LILUN030⟩. ⟨tel-03766339⟩

Thèse

Design and fabrication of GaN-based field effect power transistors up to W-band, Conception et réalisation de transistors de puissance à base du GaN jusqu’en bande W

Kathia Harrouche

In the last decades, remarkable progresses have been achieved with GaN high electron mobility transistors (HEMTs) for use in high-frequency power amplification and switching applications. Currently, the most matured GaN HEMTs are based on AlGaN/GaN heterostructures. More recently, Al-rich ultrathin…, Au cours des dernières décennies, des progrès remarquables ont été réalisés sur les transistors à haute mobilité électronique à base de GaN (HEMTs GaN) destinés aux applications d’amplification et de commutation de puissance à haute fréquence. Actuellement, les HEMTs GaN les plus matures sont basés…

Micro and nanotechnologies/Microelectronics. Université de Lille, 2021. English. ⟨NNT : 2021LILUN025⟩. ⟨tel-04413726⟩

Article dans une revue

Recent Progress on the Scanning Tunneling Microscopy and Spectroscopy Study of Semiconductor Heterojunctions

W. Peng, H. Wang, H. Lu, L. Yin, Y. Wang, B. Grandidier, D. Yang, X. Pi

The band alignment, interface states, interface coupling, and carrier transport of semiconductor heterojunctions (SHs) need to be well understood for the design and fabrication of various important semiconductor structures and devices. Scanning tunneling microscopy (STM) with high spatial…

Small, 2021, 17 (50), pp.2100655. ⟨10.1002/smll.202100655⟩. ⟨hal-03541941⟩

Article dans une revue

Passivation of miniature microwave coplanar waveguides using a thin film fluoropolymer electret

Jaouad Marzouk, Vanessa Avramovic, David Guérin, S. Arscott

The insertion losses of miniature gold/silicon-on-insulator (SOI) coplanar waveguides (CPW) are rendered low, stable, and light insensitive when covered with a thin film (95 nm) fluoropolymer deposited by a trifluoromethane (CHF 3) plasma. Microwave characterization (0-50 GHz) of the CPWs indicates…

Scientific Reports, 2021, ⟨10.1038/s41598-021-03540-0⟩. ⟨hal-03483190⟩

Chapitre d'ouvrage

Chapter 1. The five senses and the cognitivist approach to perception

Danièle Dubois, Caroline Cance, Matt Coler, Arthur Paté

Sensory Experiences, 24, John Benjamins Publishing Company, pp.23-65, 2021, Converging Evidence in Language and Communication Research, ⟨10.1075/celcr.24.01dub⟩. ⟨hal-03423199⟩

Article dans une revue

Terahertz Band Communications With Topological Valley Photonic Crystal Waveguide

Julian Webber, Yuichiro Yamagami, Guillaume Ducournau, Pascal Szriftgiser, Kei Iyoda, Masayuki Fujita, Tadao Nagatsuma, Ranjan Singh

The sixth generation (6 G) communication standard is expected to include support for very-high data rates (over 100 Gbit/s) and device electronics will require processors with on-chip communications able to support such high bandwidths. Although the terahertz band possesses ample bandwidth,…

Journal of Lightwave Technology, 2021, 39 (24), pp.7609-7620. ⟨10.1109/JLT.2021.3107682⟩. ⟨hal-03507852⟩