Publications

• Chapitre d'ouvrage

Essay on machines in general (1786): Text, translations and commentaries. Lazare Carnot's mechanics-volume 1

Raffaele Pisano, Jennifer Coopersmith, Murray Peake

Essay on Machines in General (1786), 47, Springer International Publishing, pp.1-217, 2021, Logic, Epistemology, and the Unity of Science, ⟨10.1007/978-3-030-44385-6_1⟩. ⟨hal-03839982⟩

• Chapitre d'ouvrage

End Notes

Raffaele Pisano, Jennifer Coopersmith, Murray Peake

Lazare Carnot uses the terms force and puissance interchangeably and without additional specification. As proposed above, we will use the modern term, force. Moment–of–Activity is one of the crucial terms in Carnot’s theory and is nowadays called (mechanical) work. © 2021, Springer Nature…

Essay on Machines in General (1786), 47, Springer International Publishing, pp.219-228, 2021, Logic, Epistemology, and the Unity of Science, ⟨10.1007/978-3-030-44385-6_2⟩. ⟨hal-03839956⟩

• Chapitre d'ouvrage

Lazare Carnot’s Manuscripts and Documents*

Raffaele Pisano, Jennifer Coopersmith, Murray Peake

Essay on Machines in General (1786), 47, Springer International Publishing, pp.229-239, 2021, Logic, Epistemology, and the Unity of Science, ⟨10.1007/978-3-030-44385-6_3⟩. ⟨hal-03839973⟩

• Article dans une revue

GaN-on-silicon transistors with reduced current collapse and improved blocking voltage by means of local substrate removal

Idriss Abid, Eleonora Canato, Matteo Meneghini, Gaudenzio Meneghesso, Kai Cheng, F Medjdoub

We report on the demonstration of low trapping effects above 1200 V of GaN-on-silicon transistors using a local substrate removal (LSR) followed by a thick backside ultra-wide-bandgap AlN deposition. Substrate ramp measurements show reduced hysteresis up to 3000 V. It has been found that the LSR…

Applied Physics Express, 2021, 14 (3), pp.036501. ⟨10.35848/1882-0786/abdca0⟩. ⟨hal-03113165⟩

• Article dans une revue

Experimental insight into the third-order intercepts and nonlinear distortion of GaN HEMTs

Mohammad A. Alim, Mayahsa M. Ali, Christophe Gaquière

This research is about investigating the third-order intercept point (TOI) and nonlinear distortion level (NDL) for two GaN HEMTs of different gate lengths with temperature and frequency. As a multi-biasing, input power, frequency and temperature-dependent term; the TOI point and as well as the…

International Journal of RF and Microwave Computer-Aided Engineering, 2021, 31 (2), 10 p. ⟨10.1002/mmce.22513⟩. ⟨hal-03321548⟩

• Article dans une revue

Detection of biofilm formation by ultrasonic Coda Wave Interferometry

Bowei Chen, Marwan Abdallah, Pierre Campistron, Emmanuel Moulin, Dorothée Debavelaere-Callens, Simon Khelissa, Pascal Debreyne, Nour-Eddine Chihib, Guillaume Delaplace

The biofilm formation on food-contact-surfaces is a serious threat for public health and often results in huge human and economic losses. Thus, it is of importance to develop new strategies that allow the monitoring of the biofilm formation on food-contact-surfaces. Such strategies permit effective…

Journal of Food Engineering, 2021, Journal of Food Engineering, 290, pp.110219. ⟨10.1016/j.jfoodeng.2020.110219⟩. ⟨hal-03049067⟩

• Article dans une revue

Reducing image search time by improved BOVW with wavelet decomposition

Mohammed El Amin Kourtiche, Mohammed Beladgham, Abdelmalik Taleb-Ahmed

In the last decade, the bag of visual words (BOVW) has been used widely in image classification, image retrieval and has significantly improved the performance of CBIR system. In this paper we propose a new method to enhance BOVW using features obtained from wavelet decomposition in order to reduce…

Indonesian Journal of Electrical Engineering and Computer Science, 2021, 21 (2), pp.1201-1208. ⟨10.11591/ijeecs.v21.i2.pp1201-1208⟩. ⟨hal-03472229⟩

• Article dans une revue

Selective GaN sublimation and local area regrowth for co-integration of enhancement mode and depletion mode Al(Ga)N/GaN high electron mobility transistors

Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Christophe Rodriguez, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier

In this paper, we report on the fabrication of a normally-off Al(Ga)N/GaN high electron mobility transistor with selective area sublimation under vacuum of the p type doped GaN cap layer. This soft method makes it possible to avoid damages otherwise induced by post processing with reactive ion…

Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩. ⟨hal-03035072⟩

• Article dans une revue

Effect of damping on magnetic induced resonances in cross waveguide structures

Abdelkader Mouadili, El Houssaine El Boudouti, Abdellatif Akjouj, Housni Al-Wahsh, Bahram Djafari-Rouhani, L. Dobrzynski

We consider, in the frame of long-wavelength Heisenberg model, a simple magnetic device consisting of two dangling side stubs grafted at the same site along a waveguide. This simple structure is designed to obtain bound in continuum (BIC) modes, magnonic induced transparency (MIT) and magnonic…

Journal of Superconductivity and Novel Magnetism, 2021, 34 (2), pp.597-608. ⟨10.1007/s10948-020-05742-5⟩. ⟨hal-03322501⟩

• Article dans une revue

Thermoelectric properties of nanostructured porous-polysilicon thin films

Katir Ziouche, Ibrahim Bel-Hadj, Zahia Bougrioua

In this paper, we address the optimization of the electrical and thermoelectrical properties of nanostructured polysilicon material for integration in thermoelectric (TE) devices. In particular, we describe an original method to build a superficial and nanostructured porous polysilicon (POpSi) thin…

Nano Energy, 2021, 80, pp.105553. ⟨10.1016/j.nanoen.2020.105553⟩. ⟨hal-02990079⟩