Publications

Affichage de 311 à 320 sur 15761


  • Communication dans un congrès

Strategic Trust: Reputation-Based Mechanisms for Mitigating Malicious Behavior in Vehicular Collective Perception

Adil Attiaoui, Mouna Elmachkour, Marwane Ayaida, Abdellatif Kobbane

In the realm of vehicular networks, ensuring the reliability of information exchange is paramount, particularly in scenarios where vehicles rely on cooperative perception for shared situational awareness. This paper addresses the challenge of trust and reliability in such networks, particularly in…

2024 16th International Conference on Communication Software and Networks (ICCSN), Oct 2024, Ningbo, China. pp.137-141, ⟨10.1109/ICCSN63464.2024.10793308⟩. ⟨hal-04947689⟩

  • Article dans une revue

Effective diffusion constant of stochastic processes with spatially periodic noise

Stefano Giordano, Ralf Blossey

Physical Review E , 2024, 110 (4), pp.044123. ⟨10.1103/PhysRevE.110.044123⟩. ⟨hal-04767308⟩

  • Article dans une revue

Vertical impact of a water jet on a hot plate: From a growing drop to spray formation

A. Goerlinger, Aurélie Germa, F. Zoueshtiagh, A. Duchesne

Physical Review Fluids, 2024, 9 (10), pp.104802. ⟨10.1103/PhysRevFluids.9.104802⟩. ⟨hal-04752969⟩

  • Communication dans un congrès

SSAP: A Shape-Sensitive Adversarial Patch for Comprehensive Disruption of Monocular Depth Estimation in Autonomous Navigation Applications

Amira Guesmi, Muhammad Abdullah Hanif, Ihsen Alouani, Bassem Ouni, Muhammad Shafique

2024 IEEE/RSJ International Conference on Intelligent Robots and Systems (IROS), Oct 2024, Abu Dhabi, United Arab Emirates. pp.2786-2793, ⟨10.1109/IROS58592.2024.10802252⟩. ⟨hal-04947609⟩

  • Article dans une revue

Avoiding avalanche breakdown in planar GaN Gunn diodes by means of a substrate contact

S García-Sánchez, S Pérez, I Íñiguez-De-La-Torre, B García-Vasallo, L Huo, R Lingaparthi, D Nethaji, K Radhakrishnan, M Abou Daher, M Lesecq, T González, J Mateos, M. Abou Daher

Abstract Impact ionization originated by the buffer leakage current, together with high electric fields ( > 3 MV cm −1 ) at the anode corner of the isolating trenches, has been identified as the failure mechanism of shaped planar GaN Gunn diodes when biased above 20 V, so that no evidence of…

Journal of Physics D: Applied Physics, 2024, 58 (1), pp.015112. ⟨10.1088/1361-6463/ad809f⟩. ⟨hal-04870398⟩

  • Brevet

Coincidence detector for locating a source

Francois Danneville, Christophe Loyez, Michael Bocquet

France, Patent n° : EP4441520 (A1) 2024-10-09. N° de priorité : FR20210012849 20211202. 2024, N° de priorité : FR20210012849 20211202 - N° de demande: WO2022EP83341 20221125. ⟨hal-05156319⟩

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