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Affichage de 3151 à 3160 sur 16133

Article dans une revue

A generalized deep learning-based framework for assistance to the human malaria diagnosis from microscopic images

Ziheng Yang, Halim Benhabiles, Karim Hammoudi, Feryal Windal, Ruiwen He, Dominique Collard

Malaria is an infectious disease caused by Plasmodium parasites and is potentially human life-threatening. Children under 5 years old are the most vulnerable group with approximately one death every two minutes, accounting for more than 65% of all malaria deaths. The World Health Organization (WHO…

Neural Computing and Applications, 2021, ⟨10.1007/s00521-021-06604-4⟩. ⟨hal-03457872⟩

Communication dans un congrès

Bias-dependence of surface charge at low temperature in GaN self-switching diodes

E. Perez-Martin, I. Iniguez-De-La-Torre, T. Gonzalez, Christophe Gaquière, J. Mateos

In this work, with the help of a semi-classical two-dimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence…

13th Spanish Conference on Electron Devices, CDE 2021, Jun 2021, Sevilla, Spain. pp.90-93, ⟨10.1109/CDE52135.2021.9455737⟩. ⟨hal-03362256⟩

Article dans une revue

Optomechanic Coupling in Ag Polymer Nanocomposite Films

Adnane Noual, Eunsoo Kang, Tanmoy Maji, Manos Gkikas, Bahram Djafari-Rouhani, George Fytas

Particle vibrational spectroscopy has emerged as a new tool for the measurement of elasticity, glass transition, and interactions at a nanoscale. For colloid-based materials, however, the weakly localized particle resonances in a fluid or solid medium renders their detection difficult. The strong…

Journal of Physical Chemistry C, 2021, 125 (27), pp.14854-14864. ⟨10.1021/acs.jpcc.1c04549⟩. ⟨hal-03538884⟩

Communication dans un congrès

Back gate impact on the noise performances of 22FDX fully-depleted SOI CMOS

Ousmane Magatte Kane, Luca Lucci, Pascal Scheiblin, Thierry Poiroux, Jean-Charles Barbé, Francois Danneville

Ultra-Thin-Body and Back-oxide Fully-Depleted Silicon-On-Insulator (UTBB-FDSOI) MOSFETs are the most recent and advanced Silicon-On-Insulator (SOI) architecture proposed to overcome the down-scaling limitations of traditional bulk devices. The UTBB-FDSOI architecture has already been proved very…

15th European Microwave Integrated Circuits Conference, EuMIC 2020, Jan 2021, Utrecht, Netherlands. 81-84, https://ieeexplore.ieee.org/abstract/document/9337333. ⟨hal-03462849⟩

Autre publication scientifique

Author Correction: Optoelectronic mixing with high-frequency graphene transistors (Nature Communications, (2021), 12, 1, (2728), 10.1038/s41467-021-22943-1)

A. Montanaro, W. Wei, D. de Fazio, U. Sassi, G. Soavi, P. Aversa, A.C. Ferrari, Henri Happy, P. Legagneux, Emiliano Pallecchi

The original version of this Article contained an error in Fig. 7 and Fig. 8a, c, in which the unit on the vertical axes incorrectly read “μS”. This has been corrected to “S” in both the PDF and HTML versions of the Article. © 2021 The Author(s).

2021, pp.3507. ⟨10.1038/s41467-021-23916-0⟩. ⟨hal-03542160⟩

Communication dans un congrès

Temperature Sensitivity of Surface Phononic Crystals modes (SPnC) based on Ni Pillars array deposited on LiNBO3

Abdelkrim Talbi, Ghizlane Boussatour, Aurelien Mazzamurro, Cécile Ghouila-Houri, Olivier Boumatar, Philippe Pernod

This work focuses on the theoretical and experimental investigation of acoustic waves sensors based on 2D Surface Phononic Crystals (PnC). We investigated the temperature coefficient of frequency (TCF) for surface localized modes in 2D PnCs composed of Ni pillars deposited on Y-cut LiNBO3 substrate…

2021 Symposium on Design, Test, Integration and Packaging of MEMS and MOEMS, DTIP 2021, Aug 2021, Paris, France. pp.1-3, ⟨10.1109/DTIP54218.2021.9568671⟩. ⟨hal-03541057⟩

Article dans une revue

Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Z. Benzarti, T. Sekrafi, A. Khalfallah, Zahia Bougrioua, D. Vignaud, M. Evaristo, A. Cavaleiro

A set of N-polar InN epilayers has been grown at different temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) on GaN/AlN/Al2O3(0001) templates. The purpose is to understand how the variation of crucial factor, such as the temperature, impacts the growth process and the resulting…

Journal of Alloys and Compounds, 2021, 885, pp.160951. ⟨10.1016/j.jallcom.2021.160951⟩. ⟨hal-03542616⟩

Chapitre d'ouvrage

1 - Open loop

L. Dobrzynski, Housni Al Wahsh, Abdellatif Akjouj, El Houssaine El Boudouti, Cécile Ghouila-Houri, Abdelkrim Talbi, Gaëtan Lévêque, Bahram Djafari-Rouhani, Yan Pennec, Yabin Jin

Networks can be constructed out of finite open loops. Open loops are guides such that their one-dimensional properties may be considered independent of the open loop shape and radius. Their response function is derived from that of infinite open loops. A general definition of eigenstates is also…

Photonics, Part one: photonic paths, Elsevier, pp.3-13, 2021, 978-0-12-819388-4. ⟨10.1016/B978-0-12-819388-4.00010-1⟩. ⟨hal-03350729⟩

Chapitre d'ouvrage

3 - Path states

L. Dobrzynski, Housni Al Wahsh, Abdellatif Akjouj, El Houssaine El Boudouti, Bahram Djafari-Rouhani, Cécile Ghouila-Houri, Abdelkrim Talbi, Gaëtan Lévêque

Any open and closed loop eigenfunction has zero motion space points, called here robust zeros. Any such zero is robust because its eigenstate cannot be activated by any action applied on it. Indeed, such zero space positions remain unaffected when the loop is interfaced with its outside world only…

Photonics, Part one : photonic paths, Elsevier, pp.21-31, 2021, 978-0-12-819388-4. ⟨10.1016/B978-0-12-819388-4.00012-5⟩. ⟨hal-03350804⟩

Article dans une revue

GaN-based power devices: Physics, reliability, and perspectives

Matteo Meneghini, Carlo de Santi, Idriss Abid, Matteo Buffolo, Marcello Cioni, Riyaz Abdul Khadar, Luca Nela, Nicolò Zagni, Alessandro Chini, F Medjdoub, Gaudenzio Meneghesso, Giovanni Verzellesi, Enrico Zanoni, Elison Matioli

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity…

Journal of Applied Physics, 2021, 130 (18), pp.181101. ⟨10.1063/5.0061354⟩. ⟨hal-03421528⟩