Publications

• Poster de conférence

Production of mm-Wave epiwafers of GaN on Si grown by NH3-MBE

Abdennacer Benali, Elodie Carneiro, Lyes Ben Hammou, Kathia Harrouche, Etienne Okada, Sebastian Tamariz, Stéphanie Rennesson, Farid Medjdoub, Fabrice Semond

With 5G-advanced, the data consumption between wireless equipment is predicted to follow exponential growth. To allow that, there is a need to increase the bandwidth with RF chips that fulfill 2 criteria: performance in the range of 24-100 GHz and affordability, for large scale deployment. Thanks…

22nd European Molecular Beam Epitaxy Workshop, Mar 2025, Auron, France. ⟨hal-05361467⟩

• Communication dans un congrès

Epitaxial 2D HfSe2 Semiconductor/TaSe2 Metal van der Waals Heterostructure

C. Sthioul, Y. Chernukha, H. Koussir, Christophe Coinon, G. Patriarche, L. Thomas, P. Roussel, B. Grandidier, Pascale Diener, X. Wallart

23rd European Workshop on Molecular Beam Epitaxy (EuroMBE 2025), Mar 2025, Auron, France. ⟨hal-05039146⟩

• Article dans une revue

The ‘very moment’ when UDG recognizes a flipped-out uracil base in dsDNA

Vinnarasi Saravanan, Nessim Raouraoua, Guillaume Brysbaert, Stefano Giordano, Marc F. Lensink, Fabrizio Cleri, Ralf Blossey

Abstract Uracil-DNA glycosylase (UDG) is the first enzyme in the base-excision repair (BER) pathway, acting on uracil bases in DNA. How UDG finds its targets has not been conclusively resolved yet. Based on available structural and other experimental evidence, two possible pathways are under…

Scientific Reports, 2025, 15 (1), pp.7993. ⟨10.1038/s41598-025-91705-6⟩. ⟨hal-05023935⟩

• Article dans une revue

Two Types of Bound States in the Continuum in Photonic Comb Structure

Yamina Rezzouk, Soufyane Khattou, Mohamed El Ghafiani, Madiha Amrani, El Houssaine El Boudouti, Abdelkrim Talbi, Bahram Djafari-Rouhani

We propose the design of a comb-shaped cavity that can support several BICs when attached to a waveguide. The cavity consists of a finite comb made of one stub of length placed between two stubs of length via two guides of length and the whole comb is attached vertically along a waveguide. In order…

Lecture Notes in Electrical Engineering, 2025, Lecture Notes in Electrical Engineering, 1301 (Proceedings of the 4th International Conference on Electronic Engineering and Renewable Energy Systems - Volume 2. ICEERE 2024), pp.45-53. ⟨10.1007/978-981-97-9975-6_5⟩. ⟨hal-05039914⟩

• Article dans une revue

Topological Interface States in a One-Dimensional Mesoscopic Crystal Using Su-Schrieffer-Heeger Model

Noura Ezzahni, Mohammed Elaouni, Soufyane Khattou, Madiha Amrani, Mohamed El Ghafiani, Yamina Rezzouk, El Houssaine El Boudouti, Bahram Djafari-Rouhani

We investigate the existence of topological interface states between two periodic comb-like mesoscopic crystals with different topological properties based on the Su-Schrieffer-Heeger (SSH) model. This model enables us to predict the existence of topological interface states between two connected…

Lecture Notes in Electrical Engineering, 2025, Lecture Notes in Electrical Engineering, 1301 (Proceedings of the 4th International Conference on Electronic Engineering and Renewable Energy Systems - Volume 2. ICEERE 2024), pp.75-84. ⟨10.1007/978-981-97-9975-6_8⟩. ⟨hal-05039448⟩

• Article dans une revue

Investigation of the Effect of the Nitrogen on the Band Offset and the Intersubband Absorption Coefficient of the GaNxAs1-x-ySby/GaSb Quantum Well Structures

L. Chenini, A. Aissat, S. Ammi, J. Vilcot

Lecture Notes in Electrical Engineering, 2025, Lecture Notes in Electrical Engineering, 1301 (Proceedings of the 4th International Conference on Electronic Engineering and Renewable Energy Systems - Volume 2. ICEERE 2024), pp.85-92. ⟨10.1007/978-981-97-9975-6_9⟩. ⟨hal-05039455⟩

• Article dans une revue

Transcutaneous delivery of disease-specific PI3K/Akt/mTOR inhibitor-based hybrid nanoparticles in hydrogel system for the management of psoriasis: Insights from in vivo studies

Roshan Keshari, Rupali Bagale, Sulagna Rath, Abhijit De, Rinti Banerjee, Shamik Sen, Rohit Srivastava

International Journal of Pharmaceutics, 2025, 672, pp.125325. ⟨10.1016/j.ijpharm.2025.125325⟩. ⟨hal-04971131⟩

• Communication dans un congrès

Class-Specific Dataset Splitting for YOLOv8: Improving Real-Time Performance in NVIDIA Jetson Nano for Faster Autonomous Forklifts

Chaouki Tadjine, Abdelkrim Ouafi, Abdelmalik Taleb-Ahmed, Yassin El Hillali

This research examines a class-specific YOLOv8 model setup for real-time object detection using the Logistics Objects in Context dataset, specifically looking at how it can be used in high-speed autonomous forklifts to enhance obstacle detection. The dataset contains five common object classes in…

Proceedings of the 14th International Conference on Pattern Recognition Applications and Methods, Feb 2025, Porto, Portugal. pp.788-793, ⟨10.5220/0013308700003905⟩. ⟨hal-04977371⟩

• Article dans une revue

Modeling of Surface-Emitting Terahertz Quantum Cascade Laser Based on Difference Frequency Generation

A Hamadou, Jean-Luc Thobel

In this paper, we propose a simple method to calculate the THz field and THz power generated via intracavity difference frequency generation in a dual-wavelength mid-infrared quantum cascade laser. The approach is based on using a surface emission scheme in the nonlinear waveguide. The results show…

Journal of Nano and Electronic Physics, 2025, 17 (1), pp.01012. ⟨10.21272/jnep.17(1).01012⟩. ⟨hal-04984037⟩

• Thèse

Caractérisation avancée des interfaces de transistors HEMT pour l'électronique de puissance : corrélation entre propriétés chimiques, structurales et électriques, Advanced characterization of HEMT interfaces for power electronics : correlation between chemical, structural and electrical properties

Kirène Gaffar

Le nitrure de gallium (GaN) est un matériau particulièrement adapté à la fabrication de circuits intégrés hautes performances fonctionnant à haute fréquence. La technologie GaN permet notamment d'améliorer le niveau de puissance, le rendement et la compacité des transistors HEMTs (Transistors…, Gallium nitride (GaN) is a well-suited material particularly for the manufacture of high-performance integrated circuits operating at high frequencies. In particular, GaN technology makes it possible to improve the power level, efficiency and compactness of HEMTs (High Electron Mobility Transistors…

Matériaux. Université Paris-Saclay, 2025. Français. ⟨NNT : 2025UPAST023⟩. ⟨tel-05262054⟩