Publications

Affichage de 4301 à 4310 sur 16059


  • COMM

[Invited] New Light on the Background to Galileo’s Science of the Strength of Materials: Philosophical and Historical Perspectives on Machines, Fortifications and the Scientia de ponderibus in the 15th–16th centuries

Raffaele Pisano

The Scientific Revolution. ANZAMENS, 5-8 February, HPS School, Sydney University, Australia, Feb 2019, Sydney (Australia), Australia. ⟨hal-04518359⟩

  • ART

Phenyl-grafted carbon nitride semiconductor for photocatalytic CO 2 -reduction and rapid degradation of organic dyes

Devthade Vidyasagar, Nilesh Manwar, Akanksha Gupta, Sachin Ghugal, Suresh Umare, Rabah Boukherroub

Catalysis Science & Technology, 2019, 9 (3), pp.822-832. ⟨10.1039/c8cy02220h⟩. ⟨hal-02373234⟩

  • ART

Interaction of Human α-1-Acid Glycoprotein (AGP) with Citrate-Stabilized Gold Nanoparticles: Formation of Unexpectedly Strong Binding Events

Fakhrossadat Mohammadi, Amin Sahraei, Chengnan Li, Aurélien Haustrate, V'Yacheslav Lehen'Kyi, Alexandre Barras, Rabah Boukherroub, Sabine Szunerits

Journal of Physical Chemistry C, 2019, 123 (8), pp.5073-5083. ⟨10.1021/acs.jpcc.8b10455⟩. ⟨hal-02373229⟩

  • COMM

Crystal facet engineering in Ga-doped ZnO nanowires for mid-IR plasmonics (Conference Presentation)

Vincent Sallet, Corinne Sartel, Said Hassani, Gaelle Amiri, Alain Lusson, Pierre Galtier, Isabelle Lefebvre, Christophe Delerue, Bruno Masenelli

The MOCVD growth of various Ga-doped ZnO (GZO) nanostructures for plasmonics is investigated, such as spontaneous or Au-catalyzed GZO nanowires, and ZnO/ZnO:Ga core/shell 1D structures. Indeed, in degenerate wide bandgap semiconductors such as n-type ZnO, the electron concentration can be tuned,…

SPIE Photonics West, Symposium on Oxide-based Materials and Devices X, Feb 2019, San Francisco, France. pp.72, ⟨10.1117/12.2517470⟩. ⟨hal-03323056⟩

  • COMM

Engineering the Ge/Si interface for defect-free III-V multi-junction solar cells on silicon

Youcef A Bioud, Meghan N Beattie, Abderraouf Boucherif, Romain Stricher, Serge Ecoffey, Gilles Patriarche, David Troadec, Ali Soltani, Nadi Braidy, Matthew Wilkins, Christopher E Valdivia, Karin Hinzer, Dominique Drouin, Richard Arès

Reducing the cost of III–V solar cells and enabling their direct integration on silicon can be achieved by depositing a thin, high-quality germanium (Ge) layer on low-cost Si substrates. However, the 4% lattice mismatch between Ge and Si poses a major challenge for direct epitaxial growth, leading…

SPIE Photonics West, SPIE, Feb 2019, San Francisco, CA US, United States. ⟨hal-05314906⟩

  • COMM

A porous Ge/Si interface layer for defect-free III-V multi-junction solar cells on silicon

Youcef A. Bioud, Meghan N. Beattie, Abderraouf A Boucherif, Romain Stricher, Serge Ecoffey, Gilles Patriarche, David Troadec, Nadi Braidy, Matthew Wilkins, Christopher E. Valdivia, Karin Hinzer, Dominique A Drouin, Richard A Arès

SPIE OPTO, Feb 2019, San Fransisco, United States. ⟨10.1117/12.2511080⟩. ⟨hal-02073043⟩

  • ART

First down converter multilayers integration in an industrial Si solar cell process

Lucile Dumont, Julien Cardin, Christophe Labbé, Cédric Frilay, Pierre-Matthieu Anglade, Ing‐song Yu, Maxime Vallet, Patrizio Benzo, Marzia Carrada, Didier Stiévenard, Hocine Merabet, Fabrice Gourbilleau

Down converter SiN x :Yb 3+ /SiN x :Tb 3+ multilayers are deposited by reactive magnetron cosputtering with the objective of optimizing the interaction distance betweenTb 3+ and Yb 3+ ions to favor a better light management in Si solar cells. Those Si‐based multilayers are developed to be…

Progress in Photovoltaics, 2019, 27 (2), pp.152-162. ⟨10.1002/pip.3071⟩. ⟨hal-01867390⟩