Publications

Affichage de 9401 à 9410 sur 15871


  • Ouvrages

Etude théorique de nanofils semi-conducteurs

M. Diarra, C. Delerue, Y.M. Niquet

Editions Universitaires Européennes, pp.144, 2010. ⟨hal-00575766⟩

  • Communication dans un congrès

A novel wafer level bonding/debonding technique using an anti-adhesion layer for polymer-based zero-level packaging of RF device

J.G. Kim, S. Seok, N. Rolland, P.A. Rolland

60th Electronic Components and Technology Conference, ECTC 2010, 2010, Las Vegas, NV, United States. pp.323-328, ⟨10.1109/ECTC.2010.5490954⟩. ⟨hal-00800848⟩

  • Communication dans un congrès

Nonequilibrium fluctuation relations in a quantum coherent conductor

S. Nakamura, Y. Yamauchi, M. Hashisaka, K. Chida, K. Kobayashi, T. Ono, R. Leturcq, K. Ensslin, K. Saito, Y. Utsumi, A.C. Gossard

30th International Conference on the Physics of Semiconductors, ICPS-30, 2010, Seoul, South Korea. pp.329-330, ⟨10.1063/1.3666387⟩. ⟨hal-00800869⟩

  • Article dans une revue

Control of III-V nanowire crystal structure by growth parameter tuning [Invited]

Kimberly A. Dick, Philippe Caroff, Jessica Bolinsson, Maria E. Messing, Jonas Johansson, Knut Deppert, L.R. Wallenberg, Lars Samuelson

In this work we investigate the variation of the crystal structure of gold-seeded III–V nanowires with growth parameters, in order to gain a cohesive understanding of these effects. We investigate six III–V materials: GaAs, InAs, GaP, InP, GaSb and InSb, over a variation of growth conditions. All…

Semiconductor Science and Technology, 2010, 25 (2), pp.024009-1-11. ⟨10.1088/0268-1242/25/2/024009⟩. ⟨hal-00548699⟩

  • Communication dans un congrès

Design and fabrication of a 45GHz MMIC oscillator based on InP/GaAsSb/InP DHBT process

Sylvain Laurent, Antonio Augusto Lisboa de Souza, Jean-Christophe Nallatamby, Michel Prigent, Virginie Nodjiadjim, Muriel Riet

This paper presents the design of a MMIC oscillator operating at a 45 GHz frequency. This circuit was fabricated by Alcatel-Thales III-V Lab with the new InP/GaAsSb/InP DHBT submicronic technology (We=700 nm). This transistor has a 15-μm-long two-finger emitter. The complete nonlinear modeling of…

Workshop on (INMMIC) 2010, Apr 2010, Göteborg, Sweden. pp.54-57, ⟨10.1109/INMMIC.2010.5480139⟩. ⟨hal-00606461⟩

  • Article dans une revue

Testing the temperature limits of GaN-based HEMT devices

D. Maier, M. Alomari, N. Grandjean, J.F. Carlin, M.A. Di Forte-Poisson, C. Dua, A. Chuvilin, David Troadec, Christophe Gaquière, U. Kaiser, S.L. Delage, E. Kohn

IEEE Transactions on Device and Materials Reliability, 2010, 10, pp.427-436. ⟨10.1109/TDMR.2010.2072507⟩. ⟨hal-00579038⟩

  • Article dans une revue

A theoretical and experimental study of the BCB thin-film cap zero-level package based on FEM simulations

S. Seok, N. Rolland, P.A. Rolland

Journal of Micromechanics and Microengineering, 2010, 20, pp.095010-1-7. ⟨10.1088/0960-1317/20/9/095010⟩. ⟨hal-00548602⟩

  • Communication dans un congrès

Cascaded acousto-optical deflectors for optical trapping

Jean-Claude Kastelik, Samuel Dupont, Michel Pommeray, Joseph Gazalet

European Optical Society Annual Meeting, EOSAM 2010, 2010, Paris, France. pp.TOM1_3455_07, 101-102. ⟨hal-00800864⟩

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