Publications

Affichage de 9421 à 9430 sur 15860


  • Article dans une revue

DC performance of high-quantum-efficiency 1.3µm GaNAsSb/GaAs waveguide photodetector

Z. Xu, N. Saadsaoud, Malek Zegaoui, Wan Khai Loke, Kianhuan Tan, S. Wicaksono, Soon Fatt Yoon, Christiane Legrand, Didier Decoster, Jean Chazelas

We present the dc performance of a high-quantum-efficiency GaNAsSb/GaAs p-i-n waveguide photodetector. GaNAsSb with N and Sb contents of 3.3% and 8%, respectively, is sandwiched by AlGaAs/GaAs cladding layers. Two types of device epilayer structures, i.e., with and without AlGaAs cladding layer,…

IEEE Electron Device Letters, 2010, 31 (5), pp.449-451. ⟨10.1109/LED.2010.2041742⟩. ⟨hal-00549004⟩

  • Communication dans un congrès

Growth and characterization of hexagonal boron nitride by unbalanced RF magnetron sputtering

B. Ben Moussa, J. d'Haen, C. Borschel, L. Goris, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H. Boyen, K. Haenen

15th International Hasselt Diamond Workshop, SBDD XV, 2010, Hasselt, Belgium. ⟨hal-00808251⟩

  • Article dans une revue

Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate

N. Defrance, Y. Douvry, Virginie Hoel, J.C. Gerbedoen, A. Soltani, Michel Rousseau, Jean-Claude de Jaeger, R. Langer, H. Lahreche

Electronics Letters, 2010, 46, pp.949-950. ⟨10.1049/el.2010.0431⟩. ⟨hal-00549463⟩

  • Communication dans un congrès

Development of a functional model for the nanoparticle-organic memory transistor

O. Bichler, W. Zhao, G. Gamrat, F. Alibart, S. Pleutin, D. Vuillaume

IEEE International Symposium on Circuits and Systems, ISCAS 2010, 2010, France. pp.1663-1666, ⟨10.1109/ISCAS.2010.5537487⟩. ⟨hal-00549960⟩

  • Article dans une revue

Tuning and switching the hypersonic phononic properties of elastic impedance contrast nanocomposites

A. Sato, Yan Pennec, N. Shingne, T. Thum-Albrecht, W. Knoll, M. Steinhart, Bahram Djafari-Rouhani, G. Fytas

ACS Nano, 2010, 4, pp.3471-3481. ⟨10.1021/nn100519h⟩. ⟨hal-00549446⟩

  • Article dans une revue

AlInN/AlN/GaN HEMT technology on SiC with 10-W/mm and 50% PAE at 10 GHz

N. Sarazin, E. Morvan, M.A. Di Forte Poisson, M. Oualli, Christophe Gaquière, O. Jardel, O. Drisse, M. Tordjman, M. Magis, S.L. Delage

IEEE Electron Device Letters, 2010, 31, pp.11-13. ⟨10.1109/LED.2009.2035145⟩. ⟨hal-00549451⟩

  • Article dans une revue

Low microwave noise of AlGaN/GaN HEMTs fabricated on SiCopSiC substrates

Virginie Hoel, N. Defrance, Y. Douvry, Jean-Claude de Jaeger, N. Vellas, Christophe Gaquière, M.A. Di Forte-Poisson, J. Thorpe, R. Langer

Electronics Letters, 2010, 46, pp.84-85. ⟨10.1049/el.2010.2576⟩. ⟨hal-00549457⟩

  • Communication dans un congrès

Wykorzystanie metody Monte Carlo do modelowania wlasciwosci struktur kwantowych laserów kaskadowych

P. Borowik, L. Adamowicz, Jean-Luc Thobel

IX Krajowa Konferencja Elektroniki, KKE 2010, 2010, Poland. pp.96-98. ⟨hal-00568968⟩

  • Communication dans un congrès

Joint carrier frequency offset and fast time-varying channel estimation for MIMO-OFDM systems

E.P. Simon, H. Hijazi, L. Ros

7th International Symposium on Communication Systems Networks and Digital Signal Processing, CSNDSP 2010, 2010, United Kingdom. pp.167-172. ⟨hal-00568648⟩

  • Communication dans un congrès

Comparison of classical and orthogonal UWB waveforms for radar applications

Laila Sakkila, Atika Rivenq, C. Tatkeu, Yassin El Hillali, Fouzia Boukour, Jean-Michel Rouvaen

6th International Colloquium on Signal Processing & its Applications, CSPA 2010, 2010, Malaysia. pp.1-5, ⟨10.1109/CSPA.2010.5545276⟩. ⟨hal-00568621⟩

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