Publications

• Article dans une revue

Magnetoelectric memory cell using multiferroic nanostructures and magnetoelastic switching

Nicolas Tiercelin, Yannick Dusch, Vladimir Preobrazhensky, Philippe Pernod

Nanomaterialy i nanostruktury XXI vek., 2011, 2, pp.16-20. ⟨hal-00783385⟩

• Autre publication scientifique

Fabrication et caractérisation de transistor à base de graphène nano ruban en vue d'application haute fréquence

Nan Meng

2011. ⟨hal-00574524⟩

• Article dans une revue

A 45° silicon mirror for acoustic propagation parallel to the plane of the substrate

S. Wang, Julien Carlier, Pierre Campistron, Wei-Jiang Xu, Dorothée Debavelaere-Callens, Bertrand Nongaillard, Assane Ndieguene, X. Zhao

The interest of a thin silicon oxide layer on a {110} silicon crystal planes used as 45° acoustical mirrors for reflection has been demonstrated. Passive mirror-like planes (groove depth ∼ 150 μm) were fabricated by wet chemical etching of (100) silicon. High frequency acoustical longitudinal waves…

Journal of Physics: Conference Series, 2011, 269, pp.012009-1-10. ⟨10.1088/1742-6596/269/1/012009⟩. ⟨hal-00572671⟩

• Communication dans un congrès

Electromagnetism in multicoaxial negative-index metamaterial cables

Bahram Djafari-Rouhani, M. Kushwaha

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579034⟩

• Communication dans un congrès

Gallium nitride approach for MEMS resonators with highly tunable piezo-amplified transducers

Marc Faucher, Yvon Cordier, Fabrice Semond, Virginie Brandli, Bertrand Grimbert, Achraf Ben Amar, Matthieu Werquin, Christophe Boyaval, Christophe Gaquière, Didier Theron, Lionel Buchaillot

The properties of a new class of electromechanical resonators based on GaN are presented. By using the two-dimensional electron gas (2-DEG) present at the AlGaN/GaN interface and the piezoelectric properties of this heterostructure, we use the R-HEMT (Resonant High Electron Mobility Transistor) as…

24th International Conference on Micro Electro Mechanical Systems, MEMS 2011, Jan 2011, Cancun, Mexico. pp.581-584, ⟨10.1109/MEMSYS.2011.5734491⟩. ⟨hal-00579046⟩

• Communication dans un congrès

Scanning gate transconductance microscopy and spectroscopy of a mesoscopic ring

B. Hackens, F. Martins, S. Faniel, V. Bayot, M. Pala, H. Sellier, S. Huant, L. Desplanque, X. Wallart

American Physical Society March Meeting, APS March Meeting 2011, 2011, Dallas, TX, United States. ⟨hal-00579035⟩

• Article dans une revue

Low-temperature-grown GaAs photoconductor with high dynamic responsivity in the millimeter wave range

Emilien Peytavit, Christophe Coinon, Jean-Francois Lampin

Japanese Journal of Applied Physics, part 2 : Letters, 2011, 4, pp.104101-1-3. ⟨10.1143/APEX.4.104101⟩. ⟨hal-00639827⟩

• Article dans une revue

Characterization of AlGaN/GaN high electron mobility transistor grown on silicon carbide devices with a gate length Lg = 0.15 µm

M. Gassoumi, M.M. Ben Salem, S. Saadaoui, W. Chikhaoui, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2178-2181. ⟨10.1166/sl.2011.1788⟩. ⟨hal-00795894⟩

• Article dans une revue

Identification and localization of electronic traps in AlGaN/GaN HEMTs on Al2O3 substrates using CDLTS

O. Fathallah, M. Gassoumi, Christophe Gaquière, H. Maaref

Sensor letters, 2011, 9, pp.2380-2383. ⟨10.1166/sl.2011.1786⟩. ⟨hal-00795919⟩

• Article dans une revue

Magnonic circuits and crystals

Housni Al-Wahsh, Abdellatif Akjouj, Bahram Djafari-Rouhani, L. Dobrzynski

In the frame of the long-wavelength Heisenberg model, a simple magnonic mono-mode circuit is designed to obtain transmission stop (pass) bands where the propagation of spin waves is forbidden (allowed). This simple device is composed of an infinite one-dimensional monomode waveguide (the backbone)…

Surface Science Reports, 2011, 66, pp.29-75. ⟨10.1016/j.surfrep.2010.10.002⟩. ⟨hal-00572644⟩