Publications

Affichage de 4441 à 4450 sur 16058


  • COUV

Chapter 4 - Magnons in nanometric discrete structures

Housni Al-Wahsh, Abdellatif Akjouj, L. Dobrzynski, Bahram Djafari-Rouhani, El Houssaine El Boudouti

A fundamental understanding of nanoscaled materials has become an important challenge for any technical applications. For magnetic nanoparticles, the investigations are in particular stimulated by the magnetic storage devices. In this chapter we present, in the frame of the discrete dipole…

Magnonics: interface transmission tutorial book series, pp.143-183, 2019, ISBN 978-0-12-813366-8 ; e-ISBN 978-0-12-813367-5. ⟨10.1016/B978-0-12-813366-8.00004-2⟩. ⟨hal-03356767⟩

  • OTHER

Advances in Historical Studies [Editor in Chief 8/5]

Raffaele Pisano

2019. ⟨hal-04510992⟩

  • COUV

Chapter 1 - Centered system magnons

L. Dobrzynski, Abdellatif Akjouj, Gaëtan Lévêque, El Houssaine El Boudouti, Housni Al-Wahsh

This chapter presents two simple models of magnons in centered systems. The first model represents N, with N ≥ 2, electron spins pointing in the same space direction and situated at different space positions. The first of these spins is in the center of a circle. The others are on this circle and…

Magnonics: interface transmission tutorial book series, Elsevier, pp.1-51, 2019, ISBN 978-0-12-813366-8 ; e-ISBN 978-0-12-813367-5. ⟨10.1016/B978-0-12-813366-8.00001-7⟩. ⟨hal-03350551⟩

  • COMM

Non-volatile RF and mm-wave switches based on monolayer hBN

Myungsoo Kim, Emiliano Pallecchi, Ruijing Ge, Xiaohan Wu, Vanessa Avramovic, Etienne Okada, Jack Lee, Henri Happy, Deji Akinwande

Non-volatile radio-frequency (RF) switches based on hexagonal boron nitride (hBN) are realized for the first time with low insertion loss (≤ 0.2 dB) and high isolation (≥ 15 dB) up to 110 GHz. Crystalline hBN enables the thinnest RF switch device with a single monolayer (~0.33 nm) as the memory…

IEEE International Electron Devices Meeting, IEDM 2019, Session 9 - Microwave, Millimeter Wave and Analog Technology - Compound Semiconductors and Novel Materials for RF and mmWave, Dec 2019, San Francisco, United States. paper 9.5, 4 p., ⟨10.1109/IEDM19573.2019.8993470⟩. ⟨hal-03335212⟩