Publications

• Article dans une revue

High Efficiency AlN/GaN HEMTs for Q-Band Applications with an Improved Thermal Dissipation

Riad Kabouche, Romain Pecheux, Kathia Harrouche, Etienne Okada, F Medjdoub, Joff Derluyn, Stefan Degroote, Marianne Germain, Filip Gucmann, Callum Middleton, James W Pomeroy, Martin Kuball

In this paper, we demonstrate Q-band power performance of carbon doped AlN/GaN high electron mobility transistors (HEMTs) using a deep sub-micrometer gate length (120 nm). With a maximum drain current density ID of 1.5 A/mm associated to a high electron confinement and an extrinsic transconductance…

International Journal of High Speed Electronics and Systems, 2019, 28 (01n02), pp.1940003. ⟨10.1142/S0129156419400032⟩. ⟨hal-02356733⟩

• Autre publication scientifique

Focus filière électronique

Virginie Hoel

Rendez-vous « Conseillez l’industrie ! » 2019, Paris, France, 22 mars, 2019. ⟨hal-03341281⟩

• Thèse

Micro air vehicle to nano air vehicle : theoretical and experimental studies of an artificial flapping insect, Du micro véhicule aérien au nano véhicule aérien : études théoriques et expérimentales sur un insecte artificiel à ailes battantes

Le Anh Doan

In recent decades, the prospect of exploiting the exceptional flying capacities of insects has prompted much research on the elaboration of flapping-wing nano air vehicles (FWNAV). However, when designing such a prototype, designers have to wade through a vast array of design solutions that…, Au cours des dernières décennies, la possibilité d’exploiter les capacités de vol exceptionnelles des insectes a été à l’origine de nombreuses recherches sur l’élaboration de nano-véhicules aériens (NAVs) à ailes battantes. Cependant, lors de la conception de tels prototypes, les chercheurs doivent…

Micro and nanotechnologies/Microelectronics. Université de Valenciennes et du Hainaut-Cambresis, 2019. English. ⟨NNT : 2019VALE0004⟩. ⟨tel-02125518⟩

• Article dans une revue

A Sub-35 pW Axon-Hillock artificial neuron circuit

Francois Danneville, Christophe Loyez, K. Carpentier, I. Sourikopoulos, E. Mercier, A. Cappy

Artificial Intelligence (AI) applications are developing at a high rate, facing soon a tremendous energy challenge. In this context, the original Axon-Hillock (AH) Artificial Neuron (AN) has been optimized to achieve ultra-low power (ULP) consumption. The membrane capacitance was taken out, and in…

Solid-State Electronics, 2019, 153, pp.88-92. ⟨10.1016/j.sse.2019.01.002⟩. ⟨hal-03330291⟩

• Article dans une revue

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

Mohammad A. Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière

Microelectronic Engineering, 2019, 209, pp.53-59. ⟨10.1016/j.mee.2019.03.011⟩. ⟨hal-03143596⟩

• Article dans une revue

Sound absorption by green walls at normal incidence: physical analysis and optimization

Emmanuel Attal, Nicolas Côté, Takafumi Shimizu, Bertrand Dubus

Sound absorption by different green wall systems at normal incidence is investigated between 100 and 1000 Hz. Measurements are conducted in an impedance tube in order to estimate the effective acoustic properties of plants and soils. Using these properties, the transfer matrix method is employed to…

Acta Acustica united with Acustica, 2019, 105 (2), pp.301-312. ⟨10.3813/AAA.919313⟩. ⟨hal-02356531⟩

• Article dans une revue

Terahertz plasmon-induced transparency and absorption in compact graphene-based coupled nanoribbons

Adnane Noual, Madiha Amrani, El Houssaine El Boudouti, Yan Pennec, Bahram Djafari-Rouhani

We investigate theoretically and numerically the possibility of realizing plasmon-induced transparency (PIT) and plasmon-induced absorption (PIA) in a novel compact graphene-based nanostructure. The main graphene bus waveguide is coupled to two graphene nanoribbons (GNRs). The PIT effect is…

Applied physics. A, Materials science & processing, 2019, 125 (3), pp.184. ⟨10.1007/s00339-019-2474-3⟩. ⟨hal-03143602⟩

• Article dans une revue

Thermal influence on S₂₂ kink behavior of a 0.15 μm gate length AlGaN/GaN/SiC HEMT for microwave applications

Mohammad A Alim, Ali A Rezazadeh, Christophe Gaquière, Giovanni Crupi

Abstract Thermal influence on S22 kink behavior has been carried out on a 0.15 μm gate length AlGaN/GaN/SiC high electron mobility transistor over a wide range of temperature. The size and the shape of the S22 kink effect (KE) in terms of biasing and temperature have been evaluated. The main…

• Article dans une revue

InP Series-like Transferred Electron Device for CW Submillimeter-wave Power Sources

Christophe Dalle

Journal of Computational Electronics, 2019, 18 (1), pp.155-163. ⟨10.1007/s10825-018-1261-2⟩. ⟨hal-02353179⟩

• Article dans une revue

Full statistics of conjugated thermodynamic ensembles in chains of bistable units

Manon Benedito, Fabio Manca, Stefano Giordano

The statistical mechanics and the thermodynamics of small systems are characterized by 1 the non-equivalence of the statistical ensembles. Concerning a polymer chain or an arbitrary chain 2 of independent units, this concept leads to different force-extension responses for the isotensional 3 (Gibbs…

Inventions, 2019, 4 (1), pp.19. ⟨10.3390/inventions4010019⟩. ⟨hal-02337961⟩