Publications

Affichage de 4701 à 4710 sur 15761


  • Communication dans un congrès

Detection of organic crystallites in ice using terahertz time-domain spectroscopy

Sergey I. Mitryukovskiy, Jean-Francois Lampin, Romain Peretti

We report on the detection of a narrow absorption signature of organic crystallites (alpha-lactose monohydrate) in ice using terahertz time-domain spectroscopy.

2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz 2018), Sep 2018, Nagoya, Japan. paper Th-P1-R1-5, 2 p., ⟨10.1109/IRMMW-THz.2018.8509844⟩. ⟨hal-02334951⟩

  • Communication dans un congrès

Investigating the potential of SiGe Diode in BiCMOS 55nm for power detection and datacom applications at 300 GHz

Joao Carlos Azevedo Goncalves, Issa Alaji, Daniel Gloria, Sylvie Lepilliet, Francois Danneville, Christophe Gaquière, Guillaume Ducournau

This paper describes millimeter wave (mmW) on-wafer continues wave (CW) power detection using dedicated high frequency diode junction, integrated on SiGe BiCMOS 55 nm technology from STMicroelectronics. This extraction was performed for two test structures configurations in order to evaluate the…

43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Sep 2018, Nagoya, Japan. ⟨10.1109/IRMMW-THz.2018.8510217⟩. ⟨hal-03272698⟩

  • Article dans une revue

Evidence of optically induced degradation in gallium nitride optoelectronic devices

Carlo de Santi, Alessandro Caria, Nicola Renso, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini

We provide experimental evidence that gallium-nitride-based optoelectronic devices can be affected by a photon-driven degradation mechanism unrelated to catastrophic optical damage. Any role of current in such degradation is excluded by stress tests under laser irradiation in the open-circuit…

Applied Physics Express, 2018, 11 (11), pp.111002. ⟨10.7567/APEX.11.111002⟩. ⟨hal-02356737⟩

  • Article dans une revue

GaN-Based Laser Wireless Power Transfer System

Carlo de Santi, Matteo Meneghini, Alessandro Caria, Ezgi Dogmus, Malek Zegaoui, F Medjdoub, Boris Kalinic, Tiziana Cesca, Gaudenzio Meneghesso, Enrico Zanoni

The aim of this work is to present a potential application of gallium nitride-based optoelectronic devices. By using a laser diode and a photodetector, we designed and demonstrated a free-space compact and lightweight wireless power transfer system, whose efficiency is limited by the efficiency of…

Materials, 2018, 11 (1), pp.153. ⟨10.3390/ma11010153⟩. ⟨hal-02356738⟩

  • Article dans une revue

Developing a MEMS device with built-in microfluidics for biophysical single cell characterization

Yuki Takayama, Grégoire Perret, Momoko Kumemura, Manabu Ataka, Samuel Meignan, Stanislav Karsten, Hiroyuki Fujita, Dominique Collard, Chann Lagadec, Mehmet Tarhan

This study combines the high-throughput capabilities of microfluidics with the sensitive measurements of microelectromechanical systems (MEMS) technology to perform biophysical characterization of circulating cells for diagnostic purposes. The proposed device includes a built-in microchannel that…

Micromachines, 2018, 9 (6), pp.275. ⟨10.3390/mi9060275⟩. ⟨hal-03185615⟩

  • Chapitre d'ouvrage

Chapter 2 - Phonon monomode circuits

El Houssaine El Boudouti, Abdellatif Akjouj, L. Dobrzynski, Bahram Djafari-Rouhani, Housni Al-Wahsh, Gaëtan Lévêque, Yan Pennec

In this chapter, we discuss the vibrational properties of phononic circuits that can be described in the framework of discrete or continuous models. In the case of discrete media, we use the phonon discrete model within the Green’s function method described in Chapter 1 and give the surface…

Phononics: interface transmission tutorial book series, Elsevier, pp.19-78, 2018, ISBN 978-0-12-809948-3 ; e-ISBN 978-0-12-809931-5. ⟨10.1016/B978-0-12-809948-3.00002-8⟩. ⟨hal-03356293⟩

  • Article dans une revue

Graphene FETs Based on High Resolution Nanoribbons for HF Low Power Applications

David Mele, Sarah Mehdhbi, Dalal Fadil, Wei Wei, Abdelkarim Ouerghi, Sylvie Lepilliet, Henri Happy, Emiliano Pallecchi

In this paper we present high frequency field effect transistors based on graphene nanoribbons arrays (GNRFETs). The nanoribbons serve as a channel for the transistors and are fabricated with a process based on e-beam lithography and dry etching of high mobility hydrogen intercalated epitaxial…

Electronic Materials Letters, 2018, 14 (2), pp.133-138. ⟨10.1007/s13391-018-0038-x⟩. ⟨hal-03183508⟩

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