Publications

Affichage de 5411 à 5420 sur 15860


  • Communication dans un congrès

Measurement and analysis of arc tracking characteristics in the high frequency band

Virginie Degardin, L. Koné, Pierre Laly, M. Lienard, Pierre Degauque, F. Valensi

High voltage direct current networks are now being implemented in the new generation of civil aircrafts. If a short circuit occurs between wires of the power cable, an “arc tracking” may happen. Such an arc can sustain over a time which can reach one second or more and propagate along the cable.…

2016 IEEE AUTOTESTCON, Sep 2016, Anaheim, United States. pp.Session 2D1 - Prognostics and Health Monitoring 1, 153-158, ⟨10.1109/AUTEST.2016.7589591⟩. ⟨hal-03514491⟩

  • Communication dans un congrès

Physics-based electrical compact model for monolayer Graphene FETs

Jorge Daniel Aguirre-Morales, Sebastien Fregonese, Chhandak Mukherjee, Cristell Maneux, Thomas Zimmer, Wei Wei, Henri Happy

Solid-State Device Research Conference (ESSDERC), 2016 46th European, Sep 2016, Lausanne, Switzerland. ⟨10.1109/ESSDERC.2016.7599630⟩. ⟨hal-01399868⟩

  • Communication dans un congrès

A study of diffusive transport in 14nm FDSOI MOSFET: NEGF versus QDD

G. Mugny, F.G. Pereira, D. Rideau, F. Triozon, Y.M. Niquet, M. Pala, D. Garetto, C. Delerue

Drain current in Ultra-Thin Body (UTBB) Fully-Depleted Silicon-On-Insulator (FDSOI) device is investigated using Non-Equilibrium Green Function (NEGF) simulations. The effects of phonons (PH) and surface roughness (SR) on saturation velocity are studied. We analyze the current and extract…

2016 ESSDERC - 46th European Solid-State Device Research Conference, Sep 2016, Lausanne, Switzerland. pp.424-427, ⟨10.1109/ESSDERC.2016.7599676⟩. ⟨hal-02065220⟩

  • Communication dans un congrès

Band structure of 2D nanomaterials

Christophe Delerue, Athmane Tadjine, Guy Allan

International Conference on Solution-based Two-dimensional Nanomaterials, Sol2D16, Sep 2016, Berlin, Germany. ⟨hal-03317603⟩

  • Communication dans un congrès

Controlled elaboration of high aspect ratio cone-shape pore arrays in silicon by metal assisted chemical etching

Encarnacion Torralba-Penalver, Sylvain Le Gall, Christine Cachet-Vivier, Raphaël Lachaume, Mathieu Halbwax, Vincent Magnin, Joseph Harari, Jean-Pierre Vilcot, Stéphane Bastide

Metal Assisted Chemical Etching (MACE) of Si has attracted the attention of academy and industry during the last decades as an efficient low-cost wet etching method to produce Si nanostructures with high aspect ratios (HAR) that can find applications in various fields (e.g. optoelectronics).Several…

11th International Conference On Surface Coatings And Nanostrutured Materials (NANOSMAT), Sep 2016, Aveiro, Portugal. ⟨hal-01579534⟩

  • Communication dans un congrès

Atomic Layer deposition of thin films materials for 3D solid state Li-ion microbattery

Manon Létiche, Jeremy Freixas, Étienne Eustache, Arnaud Demortière, Pascal Roussel, Thierry Brousse, Christophe Lethien

11th Japan-France joint seminar on Batteries, Sep 2016, Nantes, France. ⟨hal-02331363⟩

  • Article dans une revue

Effects of thickness layer on the photoluminescence properties of InAlAs/GaAlAs quantum dots

A. Ben Daly, Frédéric Bernardot, T. Barisien, E. Galopin, A. Lemaitre, M. Maaref, C. Testelin

Applied physics. A, Materials science & processing, 2016, 122 (9), ⟨10.1007/s00339-016-0336-9⟩. ⟨hal-02390121⟩

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