Publications

• Article dans une revue

Functionalization of Reduced Graphene Oxide via Thiol–Maleimide “Click” Chemistry: Facile Fabrication of Targeted Drug Delivery Vehicles

Yavuz Oz, Alexandre Barras, Rana Sanyal, Rabah Boukherroub, Sabine Szunerits, Amitav Sanyal

Materials based on reduced graphene oxide (rGO) have shown to be amenable to noncovalent functionalization through hydrophobic interactions. The scaffold, however, does not provide sufficient covalent linkage given the low number of reactive carboxyl and alcohol groups typically available on the…

ACS Applied Materials & Interfaces, 2017, 9 (39), pp.34194 - 34203. ⟨10.1021/acsami.7b08433⟩. ⟨hal-01804945⟩

• Ouvrages

Matériaux 2D

Arnaud Bournel, Alessandro Cresti, Emiliano Pallecchi, Luca Varani

OMNT. pp.77, 2017. ⟨hal-02008480⟩

• Communication dans un congrès

Static and low frequency noise characterization of ultra-thin body InAs MOSFETs

T.A. Karatsori, M. Pastorek, Christoforos Theodorou, A. Fadjie, Nicolas Wichmann, L. Desplanque, X. Wallart, S. Bollaert, A. Dimitriadis, G. Ghibaudo

A complete static and low frequency noise characterization of ultra-thin body InAs MOSFETs is presented. Characterization techniques established for Si MOSFETs are applied in order to extract the electrical parameters and study the behavior of these research grade devices.

2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Apr 2017, Athens, Greece. pp.105-108, ⟨10.1109/ULIS.2017.7962613⟩. ⟨hal-02050212⟩

• Article dans une revue

Thermal conductivity of Kapton-derived carbon

Srisaran Venkatachalam, Michaël Depriester, Abdelhak Hadj-Sahraoui, B. Capoen, M.-R. Ammar, D. Hourlier

Heat treatment of translucent Kapton®HN polyimide films conducted in inert atmosphere yields black residues. Micro-Raman spectroscopy revealed that the residues obtained between 600°C and 1200 °C are mainly constituted of disordered carbon. Aside its standard application in the structural…

Carbon, 2017, 114, pp.134 -140. ⟨10.1016/j.carbon.2016.11.072⟩. ⟨hal-01635100⟩

• Article dans une revue

Facile synthesis of carbon-ZnO nanocomposite with enhanced visible light photocatalytic performance

Sana Akir, Abderrahmane Hamdi, Ahmed Addad, Yannick Coffinier, Rabah Boukherroub, Amel Dakhlaoui Omrani

Applied Surface Science, 2017, 400, pp.461-470. ⟨10.1016/j.apsusc.2016.12.212⟩. ⟨hal-03837472⟩

• Article dans une revue

Recent improvements of flexible GaN-based HEMT technology

Sarra Mhedhbi, Marie Lesecq, Philippe Altuntas, N. Defrance, Yvon Cordier, Benjamin Damilano, Gema Tabares Jimenez, Abel Ebongue, Virginie Hoel

This paper reports on the fabrication and characterization of AlGaN/GaN HEMTs transfered onto two different adhesive flexible tapes. Technological improvements were made during the study concerning thermal conductivity of the tapes as well as the transfer process. In this paper, it is shown that…

Physica Status Solidi A (applications and materials science), 2017, 214 (4), 1600484, 5 p. ⟨10.1002/pssa.201600484⟩. ⟨hal-03270098⟩

• Article dans une revue

Polymer derived ceramics with β-eucryptite fillers: A novel processing route to negative and near zero expansion materials

Anna Fedorova, D. Hourlier, Michael Scheffler

Ceramics International, 2017, 43 (5), pp.4483-4488. ⟨10.1016/j.ceramint.2016.12.099⟩. ⟨hal-02369317⟩

• Article dans une revue

Net-shaped pyramidal carbon-based ceramic materials designed for terahertz absorbers

Srisaran Venkatachalam, Guillaume Ducournau, Jean-Francois Lampin, D. Hourlier

Materials & Design, 2017, 120, pp.1-9. ⟨10.1016/j.matdes.2017.02.002⟩. ⟨hal-02369324⟩

• Article dans une revue

Ultra-thin dielectric insertions for contact resistivity lowering in advanced CMOS: Promises and challenges

Julien Borrel, Louis Hutin, Donato Kava, Rémy Gassilloud, Nicolas Bernier, Yves Morand, Fabrice Nemouchi, Magali Gregoire, Emmanuel Dubois, Maud Vinet

In this paper, in order to provide a comprehensive overview of the opportunities and limitations of the metal/insulator/semiconductor contacts approach, expected performance based on ideal contact simulations as well as key practical aspects are presented. While the former give us a glimpse of the…

Japanese Journal of Applied Physics, 2017, 56 (4), pp.04CB02. ⟨10.7567/JJAP.56.04CB02⟩. ⟨hal-03325004⟩

• Article dans une revue

Sub-15nm gate-all-around field effect transistors on vertical silicon nanowires

Guilhem Larrieu, Youssouf Guerfi, X.L. Han, N. Clément

A vertical MOS architecture implemented on Si nanowire (NW) array with a scaled Gate-All-Around (14 nm) and symmetrical diffusive S/D contacts is presented with noteworthy demonstrations in both processing (layer engineering at nanoscale), and in electrical properties (high electrostatic control,…

Solid-State Electronics, 2017, 130, pp.9 - 14. ⟨10.1016/j.sse.2016.12.008⟩. ⟨hal-01898405⟩