Publications

Affichage de 5591 à 5600 sur 16091


  • Communication dans un congrès

Experimental investigation of stochastic resonance in a 65 nm CMOS artificial neuron

Sara Hedayat, Ilias Sourikopoulos, Christophe Loyez, Francois Danneville, Laurent Clavier, Virginie Hoel, A. Cappy

This work proposes an experimental demonstration of the stochastic resonance, a phenomenon widely observed in biology using a 65 nm CMOS artificial neuron. The stochastic resonance has been revealed through two different statistical studies. Moreover, when optimal, a signal to noise ratio at the…

International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. ⟨10.1109/ICNF.2017.7985962⟩. ⟨hal-03270101⟩

  • Communication dans un congrès

A 130 to 170 GHz integrated noise source based on avalanche silicon Schottky diode in BiCMOS 55 nm for in-situ noise characterization

Joao Carlos Azevedo Goncalves, Thomas Quemerais, Daniel Gloria, Gregory Avenier, Sylvie Lepilliet, Guillaume Ducournau, Christophe Gaquière, Francois Danneville

In this paper, an integrated noise source realized with silicon Schottky diodes is presented. To this aim, dedicated test structures have been designed and characterized; the corresponding Schottky diodes feature an avalanche breakdown voltage close to -6 V. When biased around this breakdown…

International Conference on Microelectronic Test Structures (ICMTS), Mar 2017, Grenoble, France. ⟨10.1109/ICMTS.2017.7954271⟩. ⟨hal-03272703⟩

  • Article dans une revue

Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate

Steven Duffy, Brahim Benbakhti, Maghnia Mattalah, Wei Zhang, Meriem Bouchilaoun, Mohammed Boucherta, Karol Kalna, Nour Eddine Bourzgui, Maher, Hassan, Ali Soltani

An optimized fabrication process of ohmic contacts is proposed to reduce the source/drain access resistance (RC) and enhance DC/RF performance of AlGaN/GaN HEMTs with a high Al concentration. We show that source/drain RC can be considerably lowered by (i) optimally etching into the barrier layer…

ECS Journal of Solid State Science and Technology, 2017, 6 (11), pp.S3040 - S3043. ⟨10.1149/2.0111711jss⟩. ⟨hal-01914382⟩

  • Article dans une revue

Thermal conductivity of glassy GeTe4 by first-principles molecular dynamics

Assil Bouzid, Hayat Zaoui, Pier Luca Palla, Guido Ori, Mauro Boero, Carlo Massobrio, Fabrizio Cleri, Évelyne Martin

A transient thermal regime is achieved in glassy GeTe4 by first-principles molecular dynamics following the recently proposed “approach-to-equilibrium” methodology. The temporal and spatial evolution of the temperature do comply with the time-dependent solution of the heat equation. We demonstrate…

Physical Chemistry Chemical Physics, 2017, 19 (15), pp.9729-9732. ⟨10.1039/c7cp01063j⟩. ⟨hal-02349381⟩

  • Communication dans un congrès

Influence d’irradiations neutroniques sur les pièges électriques induits par des stress électriques dans des HEMTs AlInN/GaN

Sébastien Petitdidier, Yannick Guhel, Jean Lionel Trolet, P. Mary, Christophe Gaquière, B. Boudart

20es Journées Nationales Microondes, 2017, Saint Malo, France. ⟨hal-01652201⟩