Publications

• Communication dans un congrès

Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

Hector Sanchez-Martin, Oscar Garcia-Perez, Ignacio Íñiguez-De-La-Torre, Susana Perez, Tomás González, Javier Mateos, Philippe Altuntas, N. Defrance, Marie Lesecq, Virginie Hoel, Yvon Cordier, Stephanie Rennesson

The performance of GaN transistors is still limited by physical and fabrication problems, mainly related to different kinds of traps. In this work, virgin transistors reveals strong low frequency dispersion both in the transconductance and output conductance, that we attribute to the presence of…

11th European Microwave Integrated Circuits Conference (EuMIC), Oct 2016, London, United Kingdom. paper EuMIC10-03, 153-156, ⟨10.1109/EuMIC.2016.7777513⟩. ⟨hal-03270103⟩

• Article dans une revue

Improved Performance of YIG (Y₃Fe₅O₁₂) Films Grown on Pt-Buffered Si Substrates by Chemical Solution Deposition Technique

Xin Guo, Ying Chen, Genshui Wang, Jun Ge, Yuanyuan Zhang, Xiaodong Tang, Freddy Ponchel, Denis Remiens, Xianlin Dong

High-quality Yttrium iron garnet (YIG) films with crack-free surface and improved magnetic performance were grown on platinum (Pt)-buffered Si substrates by chemical solution deposition technique. The saturation magnetization of obtained YIG films can reach 124 emu/cm3, which was the 88%…

• Article dans une revue

Theoretical investigation of the phonon-limited carrier mobility in (001) Si films

Jing Li, Evelyne Lampin, Christophe Delerue, Yann-Michel Niquet

We calculate the phonon-limited carrier mobility in (001) Si films with a fully atomistic framework based on a tight-binding (TB) model for the electronic structure, a valence-force-field model for the phonons, and the Boltzmann transport equation. This framework reproduces the electron and phonon…

Journal of Applied Physics, 2016, 120 (17), pp.174301. ⟨10.1063/1.4966616⟩. ⟨cea-01849845⟩

• Communication dans un congrès

Deep Trench Isolation and Through Silicon Via Wetting Characterization by High-Frequency Acoustic Reflectometry

Christophe Virgilio, Lucile Broussous, Philippe Garnier, Julien Carlier, Pierre Campistron, V. Thomy, Malika Toubal, Pascal Besson, Laurence Gabette, Bertrand Nongaillard

Wetting efficiency of microstructures or nanostructures patterned on Si wafers is a real concern in integrated circuits manufacturing. We present here a high-frequency acoustic method which enables the local determination of the wetting state of a liquid on real DTI and TSV structures. Partial…

13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), Sep 2016, Knokke, Belgium. ⟨10.4028/www.scientific.net/SSP.255.129⟩. ⟨hal-03280231⟩

• Communication dans un congrès

InAs/Al_0.4Ga_0.6Sb side gated vertical TFET on GaAs substrate

Vinay Chinni, Mohammed Zaknoune, X. Wallart, L. Desplanque

• Article dans une revue

Polarimetric distance-dependent models for large hall scenarios

Shiqi Cheng, Davy Gaillot, Emmeric Tanghe, Pierre Laly, Thierry Demol, Wout Joseph, Luc Martens, M. Lienard

IEEE Transactions on Antennas and Propagation, 2016, 64, pp.1907-1917. ⟨10.1109/TAP.2016.2535100⟩. ⟨hal-03346250⟩

• Article dans une revue

Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress

Hadhemi Lakhdar, Nathalie Labat, Arnaud Curutchet, N. Defrance, Marie Lesecq, J.C. Dejaeger, Nathalie Malbert

Microelectronics Reliability, 2016. ⟨hal-01718762⟩

• Article dans une revue

Above 2000 V breakdown voltage at 600 K GaN-on-silicon high electron mobility transistors

Nicolas Herbecq, Isabelle Roch-Jeune, Astrid Linge, Malek Zegaoui, Pierre-Olivier Jeannin, Nicolas Clément, Jean-Paul Rouger, F Medjdoub

Physica Status Solidi A (applications and materials science), 2016, 213 (4), pp.873--877. ⟨10.1002/pssa.201532572⟩. ⟨hal-02277752⟩

• Article dans une revue

Electronic structure investigation of Al0.7Ga0.3As/GaAs nanometric heterostructures by Kelvin force microscopy

Sylvain Pouch, Francois Triozon, Nicolas Chevalier, Thierry Melin, Yann Michel Niquet, Lukasz Borowik

Kelvin force microscopy provides a spatially resolved measurement of the surface potential, which is related to the energetic band structure of a material. The goal of this work is to investigate the surface potential on Al0.7Ga0.3As and GaAs heterostructures with a decreasing layer thickness up to…

RSC Advances, 2016, 6 (8), pp.6782-6787. ⟨10.1039/c5ra24505b⟩. ⟨cea-01851572⟩

• Article dans une revue

Magnetic-Phase Dependence of the Spin Carrier Mean Free Path in Graphene Nanoribbons

Jing Li, Yann-Michel Niquet, Christophe Delerue

We show theoretically that the intrinsic (phonon-limited) carrier mobility in graphene nanoribbons is considerably influenced by the presence of spin-polarized edge states. When the coupling between opposite edges switches from antiferromagnetic to ferromagnetic with increasing carrier density, the…

Physical Review Letters, 2016, 116 (23), pp.236602. ⟨10.1103/PhysRevLett.116.236602⟩. ⟨cea-01849844⟩