Publications

• Communication dans un congrès

Saliency-guided video deinterlacing

Maria Trocan, François-Xavier Coudoux

Video deinterlacing is a technique wherein the interlaced video format is converted into progressive scan format for nowadays display devices. In this paper a spatial saliency-guided motion compensated deinterlacing method is proposed: our algorithm classifies the field according to its texture and…

7th International Conference on Computational Collective Intelligence Technologies and Applications, ICCCI 2015, Sep 2015, Madrid, Spain. pp.24-33, ⟨10.1007/978-3-319-24306-1_3⟩. ⟨hal-03845479⟩

• Communication dans un congrès

1-3 Piezocomposites Based on Super-Cell Structuring for Transducer Applications

Rémi Rouffaud, Franck Levassort, Marc Lethiecq, Mai Pham Thi, Anne-Christine Hladky, Claire Bantignies

—In ultrasound transducers, the most popular fabrication method for 1-3 piezocomposites is the « dice and fill » method where lateral periodicity p is introduced and leads to the occurrence of lateral modes. These spurious modes can drastically damage the performance of the device if they appear…

2015 IEEE International Ultrasonics Symposium (IUS), Oct 2015, Taipei, Taiwan. ⟨10.1109/ULTSYM.2015.0368⟩. ⟨hal-01705138⟩

• Communication dans un congrès

Tunable Bragg band gaps in piezocomposite phononic crystals

Charles Croënne, Marie-Fraise Ponge, Anne-Christine Hladky, Mai Pham Thi, Franck Levassort, Lionel Haumesser, Jean-Charles Le Bunetel

Phononic Crystals made of piezoelectric composites with 1-3 connectivity are theoretically and experimentally studied. They present Bragg band gaps that depend on the periodic electrical boundary conditions. These structures have improved properties compared to bulk piezoelectric devices.…

2015 IEEE International Ultrasonics Symposium (IUS), Oct 2015, Taipei, Taiwan. pp.1-4, ⟨10.1109/ULTSYM.2015.0051⟩. ⟨hal-03299401⟩

• Communication dans un congrès

Conception d'un quadrupleur de fréquence en technologie BiCMOS 55 nm en bande G

Walid Aouimeur, Estelle Lauga-Larroze, José Moron Guerra, Thomas Quémerais, Ayssar Serhan, Christophe Gaquière, Jean-Daniel Arnould

GDR ONDES, Oct 2015, Lyon, France. ⟨hal-02019222⟩

• Article dans une revue

Absence of carrier separation in ambipolar charge and spin drift in p + -GaAs

Fabian Cadiz, D. Paget, A. Rowe, L. Martinelli, S. Arscott

Applied Physics Letters, 2015, 107 (16), pp.162101. ⟨10.1063/1.4933189⟩. ⟨hal-02345561⟩

• Communication dans un congrès

Polymer thin film deposition using atmospheric pressure single plasma jet or plasma jet array from a Plasma Gun device

Céline Vivien, Eric Robert, Jean-Michel Pouvesle

Plasma Enhanced Chemical Vapour Deposition (PECVD) processes have been used for decades for surface processing in a wide range of industrial applications like semiconductor films, low-k films, barrier diffusion. Thin film deposition is especially of high interest for biomedical applications for the…

Polymer thin film deposition using atmospheric pressure single plasma jet or plasma jet array from a Plasma Gun device . AVS 62nd International Symposium, AVS, Oct 2015, San José, United States. ⟨hal-01258297⟩

• Article dans une revue

Thermoelectric energy conversion: How good can silicon be?

Maciej Haras, Valeria Lacatena, François Morini, J.F. Robillard, Stephane Monfray, Thomas Skotnicki, Emmanuel Dubois

Lack of materials which are thermoelectrically efficient and economically attractive is a challenge in thermoelectricity. Silicon could be a good thermoelectric material offering CMOS compatibility, harmlessness and cost reduction but it features a too high thermal conductivity. High harvested…

Materials Letters, 2015, 157, pp.193-196. ⟨10.1016/j.matlet.2015.05.012⟩. ⟨hal-03325003v2⟩

• Article dans une revue

Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

V. Talbo, J. Mateos, T González, Y. Lechaux, Nicolas Wichmann, S. Bollaert, V Vasallo

Impact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact…

Journal of Physics: Conference Series, 2015, 647, pp.012056. ⟨10.1088/1742-6596/647/1/012056⟩. ⟨hal-02115673⟩

• Article dans une revue

Improvement of interfacial and electrical properties of Al2O 3 / n-Ga0.47 In0.53 As for III-V impact ionization MOSFETs

Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T González, V Vasallo, Nicolas Wichmann

In this work, Metal - Oxide - Semiconductor Capacitors (MOSCaps) based on Al2O3/ n-Ga0.47In0.53As interface have been studied. In order to have high MOSFETs performance, it is necessary to improve the semiconductor - oxide interface quality. It is observed that the (NH4)2S passivation shows lower…

Journal of Physics: Conference Series, 2015, 647, pp.012062. ⟨10.1088/1742-6596/647/1/012062⟩. ⟨hal-02115664⟩

• Communication dans un congrès

NPSAN intégrant des commutateurs moléculaires optiquement stimulables

Yannick Viero, Louis Thomas, David Guérin, Guillaume Copie, Christophe Krzeminski, Fabrizio Cleri, Dominique Vuillaume, Stéphane Lenfant, Ioana Dobra, Philippe Blanchard, Jean Roncali, Mohammed Ikbal, Shlomo Yitzchaik

Science et Technologie des systèmes Pi-Conjugués (SPIC), Oct 2015, Angers, France. ⟨hal-02920652⟩