Publications

Affichage de 621 à 630 sur 16064


  • Communication dans un congrès

Microfabricated vapor cell atomic clocks at FEMTO-ST

Clément Carlé, Martin Callejo, Andrei Mursa, Moustafa Abdel Hafiz, Quentin Tanguy, Rémy Vicarini, Jacques Millo, Vincent Maurice, Emmanuel Klinger, Nicolas Passilly, Rodolphe Boudot

The convergence of atomic spectroscopy, MEMS cell technologies and integrated photonics has led to the deployment of high-precision chip-scale atomic devices [1]. In this talk, we will present in-progress studies at FEMTO-ST Institute, France, for the development of microcellbased microwave and…

Hot Vapor Workshop, Sep 2024, Stuttgart, Germany. ⟨hal-04770434⟩

  • Poster de conférence

SiC for Sensing in Harsh Environment

Marc Portail, Sylvain Kern, Clément Berger, Cécile Ghouila-Houri, Vincent Guigoz, Daniel Alquier, Ileana Florea, Isabelle Dufour, Abdelkrim Talbi, Philippe Pernod, Jean-François Michaud

International Conference on Silicon Carbide and Related Materials, Sep 2024, Rayleigh, North Carolina, United States. ⟨hal-04922976⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 13/4]

Raffaele Pisano

2024. ⟨hal-04859421⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 13/3]

Raffaele Pisano

2024. ⟨hal-04746299⟩

  • Article dans une revue

Growth of Low-Temperature Epitaxial Lithium Niobate Thin Films and Guided-Wave Optical Properties

Thanh Ngoc Kim Bui, Estelle Wagner, Rahma Moalla, William Maudez, Karim Dogheche, Romain Bachelet, Bruno Masenelli, Giacomo Benvenuti, Denis Remiens, El Hadj Dogheche

LiNbO3 thin films are grown on a c-plane (0001) sapphire wafer at a relatively low substrate temperature by chemical beam vapor deposition (CBVD) in Sybilla equipment. Raman measurements only evidence the LiNbO3 phase, while HR-XRD diffractograms demonstrate a c-axis-oriented growth with only (006…

Photonics, 2024, 11 (10), pp.895. ⟨10.3390/photonics11100895⟩. ⟨hal-04713289⟩

  • Communication dans un congrès

Integration of InP Based Double Heterojunction Bipolar Transistor on Silicon Interposer and Associated RF Characterization

A. Oliveira, O. Valorge, A. Divay, H. Boutry, T. Mourier, F. Berger, C. Dubarry, J. Lugo-Alvarez, Y. Roelens, M. Zaknoune

In this paper, InP/InGaAs Double Heterojunction Bipolar Transistors (DHBTs) dies based on standard process fabrication are transferred onto a Silicon interposer. The chiplet heterogeneous integration is performed with a flip-chip assembly based on Cu-Ni-SnAg μbumps. The validity and performance…

2024 54th European Microwave Conference (EuMC), Sep 2024, Paris, France. pp.768-771, ⟨10.23919/EuMC61614.2024.10732598⟩. ⟨hal-04764934⟩