Publications

Affichage de 6221 à 6230 sur 15759


  • Chapitre d'ouvrage

Preface. A Brief History of a Concept (Agamenon Oliveira's Author) [Preface]

Raffaele Pisano

A History of the Work Concept, Springer International Publishing, pp.v-vi, 2014, 978-94-007-7704-0. ⟨10.1007/978-3-031-12195-1⟩. ⟨hal-04509483⟩

  • Proceedings/Recueil des communications

Note su Scienza e Tecnica (Notes on Science and Technique)

Raffaele Pisano, Danilo Capecchi

Proceedings of 27th and 29th annual SISFA Conferences Societá Italiana degli Storici della Fisica e dell'Astronomia, Aracne, pp.115-124, 2014, 978-88-548-7206-6. ⟨10.4399/978885487206610⟩. ⟨hal-04512964⟩

  • Communication dans un congrès

Memristive devices: an interconnect solution for matrix-based architectures?

Sébastien Le Beux, F. Alibart, Dominique Vuillaume, Catherine Dubourdieu, Ian O'Connor

no abstract

Symposium S: Memristor materials, mechanisms and devices for unconventional computing, E-MRS 2014 Spring Meeting, 2014, Lille, France. ⟨hal-01489813⟩

  • Communication dans un congrès

A GaN Schottky diode-based analog phase shifter MMIC

Chong Jin, Etienne Okada, Marc Faucher, Damien Ducatteau, Mohammed Zaknoune, Dimitris Pavlidis

A GaN Schottky Diode-based Analog Phase Shifter MMIC of T-topology has been designed for 35 GHz operation. An all E-Beam technology was employed for MMIC realization. The measured, as well modeled small and large-signal diode characteristics were used for evaluating the phase-shifter performance in…

9th European Microwave Integrated Circuit Conference (EuMIC), Oct 2014, Rome, Italy. pp.96-99, ⟨10.1109/EuMIC.2014.6997800⟩. ⟨hal-03286170⟩

  • Communication dans un congrès

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩

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