Publications

• Article dans une revue

Diffusion based kinetic selectivity modulation of enzymatic proteolysis in a microfluidic reactor : experimental analysis and stochastic modeling

Adil Elagli, Simon Laurette, A. Treizebre, Bertrand Bocquet, Renato Froidevaux

Microreactors enable new experimental ways for enzyme engineering. In this context, we show that the liquid-liquid parallel laminar flows in microchannels cause a kinetic selectivity modification of proteolytic enzymatic reaction involving hemoglobin and pepsin, reaction that generates numerous…

RSC Advances, 2014, 4, pp.3873-3882. ⟨10.1039/C3RA46005C⟩. ⟨hal-00922402⟩

• Communication dans un congrès

Transmission and attenuation of Lamb waves through a periodic array of rectangular slits in a plate

Rayisa P. Moiseyenko, Yan Pennec, Rémi Marchal, Bernard Bonello, Bahram Djafari-Rouhani

Acoustic wave transmission through sub-wavelength slits or holes, then on layers of periodically spaced cylinders and double fishnet structures, known as acoustic metamaterials has been studied in many works in relation with physical phenomena such as extraordinary resonant transmission, sound…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964109⟩

• Article dans une revue

Magneto-electro-elastic effective properties of multilayered artificial multiferroics with arbitrary lamination direction

Stefano Giordano, Marc Goueygou, Nicolas Tiercelin, Abdelkrim Talbi, Philippe Pernod, Vladimir Preobrazhensky

This work deals with the determination of the effective response of a multilayered or laminated heterostructure composed of materials with an arbitrary coupled anisotropic behavior. In particular, we elaborate a fully algebraic technique for obtaining the homogenized parameters of a magneto-electro…

International Journal of Engineering Science, 2014, 78, pp.134-153. ⟨10.1016/j.ijengsci.2014.02.011⟩. ⟨hal-00957770⟩

• Communication dans un congrès

Tailoring thermal conductivity of graphene via defect-and-molecular engineering

Stefan Bringuier, J.F. Robillard, Pierre Deymier, Krishna Muralidharan

The exceptional thermal properties of graphene have attracted enormous interest over the past decade. Consequently, there is an increased push towards utilizing graphene in thermal-management systems such as thermal interface materials and thermoelectrics. While, many recent investigations have…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964528⟩

• Communication dans un congrès

Theory and simulation of optomechanical effects in phoxonic crystals

Said El-Jallal, Mourad Oudich, Yan Pennec, Abdelkader Makhoute, Jordi Gomis-Bresco, Daniel Navarro-Urrios, Clivia M. Sotomayor Torres, Alejandro Martínez, Bahram Djafari-Rouhani

Phoxonic crystals are periodic structures that can exhibit dual phononic and photonic band gaps, thus allowing the simultaneous confinement of both acoustic and optical waves inside the same defect such as a cavity or a waveguide. Then, one can expect an enhancement of the phonon-photon interaction…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium D - Phonons and fluctuations in low dimensional structures, 2014, Lille, France. ⟨hal-00964102⟩

• Communication dans un congrès

CIGSe absorber layers deposition by single target magnetron sputtering

R. Meunier, S. Fabert, M. Ricci, P.Y. Thoulon, Thomas Aviles, Jean-Pierre Vilcot, Alain Lafond, Michèle Carette, Pierre-Yves Jouan, Marie-Paule Besland

In the last decades, the deposition of CIGSe thin films by sputtering has seldom been investigated. Besides, the sputtering of a single quaternary CIGSe target would be a real advantage for industrial development. Indeed, sputtering technique exhibits a good compatibility with industrial up-scaling…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium A - Thin film chalcogenide photovoltaic materials, 2014, Lille, France. ⟨hal-00964175⟩

• Communication dans un congrès

Phononic crystals patterning by e-beam lithography "dots on the fly" methodology for integration into thermoelectric energy converters

Valeria Lacatena, Maciej Haras, J.F. Robillard, Stéphane Monfray, Thomas Skotnicki, Emmanuel Dubois

A phononic engineered pattern is conceptualized and realized to hinder the phonons propagation and reduce the lattice thermal conductivity. The pattern fabrication methodology is shown and the procedure of integration on suspended membrane for thermal conductivity characterization is depicted. The…

17èmes Journées Nationales du Réseau Doctoral en Micro-Nanoélectronique, JNRDM 2014, 2014, Villeneuve d'Ascq, France. 3 p. ⟨hal-01020281⟩

• Article dans une revue

In situ integrated tuner approach for load-pull measurement of Si/SiGe:C HBT at 200 GHz

Issam Hasnaoui, Alexandre Pottrain, Thomas Lacave, Pascal Chevalier, Daniel Gloria, Christophe Gaquière

Load impedance variations were obtained using an innovative integrated tuner at G-band. The 200 GHz load-pull measurements on a silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) are presented. First, the linearity of the integrated tuner is checked. Then, the main load-pull…

Electronics Letters, 2014, 50, pp.1070-1072. ⟨10.1049/el.2014.0186⟩. ⟨hal-01055077⟩

• Communication dans un congrès

Simulation and comparative study of graphene field effect transistor using ISE TCAD

B. Hafsi, A. Boubaker, N. Ismail, A. Kalboussi, Dominique Vuillaume, Kamal Lmimouni

7th International Conference on Molecular Electronics, ElecMol14, 2014, Strasbourg, France. ⟨hal-01055036⟩

• Article dans une revue

Optical properties of gallium nitride heterostructures grown on silicon for waveguiding application

Irma Saraswati, Arnaud Stolz, S. Ko, El Hadj Dogheche, Nji Raden Poespawati, Retno Wigajatri, Didier Decoster

Gallium nitride (GaN) on silicon (Si) is governed by the possibility to use this family of semiconductor for novel optoelectronic devices. GaN layers are deposited by MOCVD on silicon Si (111) using AlGaN buffer layer. We have studied the microstructure quality of the films. From SEM, TEM and AFM…

Advanced Materials Research, 2014, 980, pp.41-45. ⟨10.4028/www.scientific.net/AMR.980.41⟩. ⟨hal-01020484⟩