Publications

Affichage de 6711 à 6720 sur 16142


  • Communication dans un congrès

Electrooptic and converse-piezoelectric properties of epitaxial GaN/Si structures for optoelectronic applications

Mireille Cuniot-Ponsard, Irma Saraswati, S.-M. Ko, Mathieu Halbwax, Y.-H. Cho, N.-R. Poespawati, El Hadj Dogheche

In order to take advantage in all-optic optoelectronic devices, we have investigated the optical and piezoelectric properties of GaN films deposited on (111) silicon. Films are epitaxially grown by MOCVD, thanks to a buffer made of (Al, Ga) N intermediate layers [1]. Structural properties of GaN…

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium K - Challenges for group III nitride semiconductors for solid state lighting and beyond, May 2014, Lille, France. ⟨hal-00961405⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 3/5]

Raffaele Pisano

2014. ⟨hal-04511043⟩

  • Communication dans un congrès

Correlative light atomic force electron microscopy (CLAFEM) : imagerie d'organites et de micro-organismes intracellulaires

Michka Popoff, Sébastien Janel, Nicolas Barois, Antonino Bongiovanni, Elisabeth Werkmeister, Frank Lafont

17ème Forum des Microscopies à Sonde Locale, 2014, Montauban, France. session 11, papier 41, 108-109. ⟨hal-01005713⟩

  • Article dans une revue

Electronic and physico-chemical properties of nanometric boron delta-doped diamond structures

Gauthier Chicot, Alexandre Fiori, P.N. Volpe, Thu Nhi Tran Thi, Jean-Claude Gerbedoen, Jessica Bousquet, M.P. Alegre, J.C. Pinero, D. Araujo, F. Jomard, Ali Soltani, Jean-Claude de Jaeger, J. Morse, J. Härtwig, Nicolas Tranchant, C. Mer-Calfati, Jean-Charles Arnault, Julien Delahaye, Thierry Grenet, David Eon, Franck Omnès, Julien Pernot, Etienne Bustarret

Heavily boron doped diamond epilayers with thicknesses ranging from 40 to less than 2 nm and buried between nominally undoped thicker layers have been grown in two different reactors. Two types of [100]-oriented single crystal diamond substrates were used after being characterized by X-ray white…

Journal of Applied Physics, 2014, 116, pp.083702. ⟨10.1063/1.4893186⟩. ⟨hal-01058487⟩

  • Article dans une revue

High frequency acoustic for nanostructures wetting characterization

Sizhe Li, Sébastien Lamant, Julien Carlier, Malika Toubal, Pierre Campistron, Xiumei Xu, Guy Vereecke, Vincent Senez, V. Thomy, Bertrand Nongaillard

Nanostructure wetting is a key problem when developing superhydrophobic surfaces. Conventional methods do not allow us to draw conclusions about the partial or complete wetting of structures on the nanoscale. Moreover, advanced techniques are not always compatible with an in situ, real time,…

Langmuir, 2014, 30, pp.7601-7608. ⟨10.1021/la5013395⟩. ⟨hal-01044827⟩

  • Communication dans un congrès

Synthesis and assembling of nano-materials for band gaps material engineering in microelectro- acoustic devices

Abdelkrim Talbi, Du Yu, Hongzhe Tang, Vladimir Preobrazhensky, Philippe Pernod, Olivier Bou Matar

Joint 25th Conference of the Condensed Matter Division of the European Physical Society, and 14èmes Journées de la Matière Condensée, CMD25-JMC14, 2014, Paris, France. ⟨hal-01015271⟩