Publications

Affichage de 6761 à 6770 sur 16094


  • Communication dans un congrès

Distributional upper bound on the interference in spatial wireless multiuser ultrawideband communication systems

Gareth W. Peters, Ido Nevat, Laurent Clavier, François Septier

We develop a novel distributional upper bound on the interference created in an ultra-wideband wireless communication systems under two general assumptions: the first is that there is an unknown number of interferers who are distributed according to a homogeneous Poisson point process randomly in…

IEEE International Conference on Acoustics, Speech, and Signal Processing, ICASSP 2014, 2014, Florence, Italy. pp.5764-5768, ⟨10.1109/ICASSP.2014.6854708⟩. ⟨hal-01056963⟩

  • Communication dans un congrès

Interfacial strength of InP/Si substructure

Éric Le Bourhis, Konstantinos Pantzas, Gilles Patriarche, Isabelle Sagnes, David Troadec, Anne Talneau

16th International Conference on Experimental Mechanics, ICEM16, 2014, Cambridge, United Kingdom. 2 p. ⟨hal-00992686⟩

  • Communication dans un congrès

Description statistique du comportement de la fonction de Green dans un milieu réverbérant : applications à la localisation de source

Hossep Achdjian, Emmanuel Moulin, Farouk Benmeddour, Jamal Assaad

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. Session APUG1 : Acoustique physique et propagation, papier CFA2014/187, 46-51. ⟨hal-00978409⟩

  • Communication dans un congrès

Etude expérimentale du phénomène d'auto-collimation d'une source cylindrique ultrasonore insérée dans un cristal phononique

B. Morvan, A. Tinel, Jerome O. Vasseur, R. Sainidou, P. Rembert, N. Swinteck, P. Deymier

12ème Congrès Français d'Acoustique, CFA 2014, 2014, Poitiers, France. ⟨hal-00978396⟩

  • Communication dans un congrès

Influence of an interfacial AlxIn1-xSb layer on the strain relaxation and surface morphology of thin GaSb layers epitaxially grown on GaAs(001)

Mathieu Danoy, Pierre-François Angry, Julien Gavrel, Charlène Brillard, L. Desplanque, Y. Wang, P. Ruterana, Xavier Wallart

This work focuses on the strain relaxation and surface morphology of 10 ML thick GaSb layers on GaAs. It is shown that full relaxation is never reached for this thickness. The use of an AlSb interfacial layer only slightly improves strain relaxation but greatly reduces surface roughness. Finally,…

26th International Conference on Indium Phosphide and Related Materials, IPRM 2014, Compound Semiconductor Week, CSW 2014, 2014, Montpellier, France. ⟨hal-00992670⟩

  • Communication dans un congrès

Decision feedback equalization with channel dependent power consumption for 60GHz receivers

Ilias Sourikopoulos

Doctoriales Lille Nord de France 2014, 2014, Marcq-en-Baroeul, France. ⟨hal-00986878⟩

  • Communication dans un congrès

Redox-coated nanoelectrode array : a coupled electrochemical and molecular electronics study

Jorge Trasobares, Ragavendran Sivakumarasamy, Claire Whal, Alexis Vlandas, Thierry Martin, J.P. Nys, Dominique Vuillaume, Didier Theron, Nicolas Clément

European Materials Research Society Spring Meeting, E-MRS Spring 2014, Symposium M - Molecular materials - Towards quantum properties (MOLMAT-Q), 2014, Lille, France. ⟨hal-00957799⟩