Publications

• Article dans une revue

Inhomogeneous Si-doping of gold-seeded InAs nanowires grown by molecular beam epitaxy

C. Rolland, P. Caroff, Christophe Coinon, X. Wallart, R. Leturcq

Applied Physics Letters, 2013, 102, pp.223105-1-4. ⟨10.1063/1.4809576⟩. ⟨hal-00871968⟩

• Article dans une revue

High surface capacity Li-ion all solid state 3D microbattery based on anatase TiO2 deposited by ALD on silicon microstructures

E. Eustache, P. Tilmant, L. Morgenroth, P. Roussel, N. Rolland, Thierry Brousse, C. Lethien

ECS Transactions, 2013, 58, pp.119-129. ⟨10.1149/05810.0119ecst⟩. ⟨hal-00877701⟩

• Proceedings/Recueil des communications

On Lagrangian in Maxwell's electromagnetic theory

Raffaele Pisano

Scientiarum Historia VI, The Federate University of Rio de Janeiro Press, pp.44-59, 2013, ISSN 2176-123X. ⟨hal-04517937⟩

• Article dans une revue

Inline high frequency ultrasonic particle sizer

Fabrice Lefebvre, J. Petit, Georges Nassar, P. Debreyne, Guillaume Delaplace, Bertrand Nongaillard

This paper reports the development of a new method of particle sizing in a liquid. This method uses high frequency focused ultrasounds to detect particles crossing the focal zone of an ultrasonic sensor and to determine their size distribution by processing the reflected echoes. The major advantage…

Review of Scientific Instruments, 2013, 84 (7), pp.075101. ⟨10.1063/1.4811847⟩. ⟨hal-00877657⟩

• Article dans une revue

Low-temperature crystallization of high performance Pb0.4Sr 0.6TiO3 films compatible with the current silicon-based microelectronic technology

K. Li, Denis Remiens, X.L. Dong, J. Costecalde, N. Sama, T. Li, G. Du, Y. Chen, G.S. Wang

Applied Physics Letters, 2013, 102, 212901, 4 p. ⟨10.1063/1.4807792⟩. ⟨hal-00877663⟩

• Article dans une revue

Hidden surface states at non-polar GaN (101¯0) facets : intrinsic pinning of nanowires

L. Lymperakis, P.H. Weidlich, H. Eisele, M. Schnedler, J.P. Nys, B. Grandidier, D. Stiévenard, R.E. Dunin-Borkowski, J. Neugebauer, P. Ebert

Applied Physics Letters, 2013, 103, 152101, 4 p. ⟨10.1063/1.4823723⟩. ⟨hal-00877636⟩

• Article dans une revue

Coherent tunnelling across a quantum point contact in the quantum Hall regime

F. Martins, S. Faniel, B. Rosenow, Hermann Sellier, Serge Huant, M. G. Pala, L. Desplanque, X. Wallart, Vincent Bayot, B. Hackens

The unique properties of quantum Hall devices arise from the ideal one-dimensional edge states that form in a two-dimensional electron system at high magnetic field. Tunnelling between edge states across a quantum point contact (QPC) has already revealed rich physics, like fractionally charged…

Scientific Reports, 2013, 3, pp.1416. ⟨10.1038/srep01416⟩. ⟨hal-00932989⟩

• Article dans une revue

Six-port-based compact and low-cost near-field 35 GHz microscopy platform for non-destructive evaluation

Kamel Haddadi, T. Lasri

NDT & E International, 2013, 55, pp.102-108. ⟨10.1016/j.ndteint.2013.01.018⟩. ⟨hal-00797211⟩

• Article dans une revue

True planar InAs/AlSb HEMTs with ion-implantation technique for low-power cryogenic applications

G. Moschetti, M. Abbasi, P.A. Nilsson, A. Hallen, L. Desplanque, X. Wallart, J. Grahn

Solid-State Electronics, 2013, 79, pp.268-273. ⟨10.1016/j.sse.2012.06.013⟩. ⟨hal-00795944⟩

• Article dans une revue

[Invited] Assessment of transistors based on GaN on silicon substrate in view of integration with silicon technology

A. Soltani, Y. Cordier, J.C. Gerbedoen, S. Joblot, Etienne Okada, M. Chmielowska, M.R. Ramdani, Jean-Claude de Jaeger

In this work, AlGaN/GaN high electron mobility transistors on (1 0 0) and (1 1 0) oriented silicon substrates are investigated in view of monolithic integration with silicon MOSFETs for making more compact microwave power electronics. Epilayers are grown by molecular beam epitaxy on highly…

Semiconductor Science and Technology, 2013, 28, pp.094003-1-6. ⟨10.1088/0268-1242/28/9/094003⟩. ⟨hal-00872010⟩