Publications

• Communication dans un congrès

Passivation Al2O3 par ALD sur p-Si Cz

M. Pawlik, Jean-Pierre Vilcot, Mathieu Halbwax, M. Gauthier, N. Le Quang

3èmes Journées Nationales du Photovoltaïque, JNPV 2013, 2013, Dourdan, France. ⟨hal-00940902⟩

• Article dans une revue

Characteristics of the surface microstructures in thick InGaN layers on GaN

Y. El Gmili, G. Orsal, K. Pantzas, A. Ahaitouf, T. Moudakir, S. Gautier, G. Patriarche, David Troadec, Jean-Paul Salvestrini, A. Ougazzaden

This paper focuses on a comparative study of optical, morphological, microstructural and microcompositional properties of typical InGaN samples which exhibit V-defects but also two additional surface defects features, referred to as inclusion#1 (Ic1) and inclusion#2 (Ic2). HR-XRD, AFM, SEM, STEM…

Optical Materials Express, 2013, 3, pp.1111-1118. ⟨10.1364/OME.3.001111⟩. ⟨hal-00815384⟩

• Article dans une revue

Time-reversal UWB positioning beacon for railway application

B. Fall, F. Elbahhar, M. Heddebaut, Atika Rivenq

This paper studies a new positioning beacon for railway transport using Ultra Wideband (UWB) radio and Time Reversal (TR) techniques. UWB radio has the potential to offer a good level of performance in terms of localization accuracy. Time Reversal channel pre-filtering facilitates signal detection…

Wireless Engineering and Technology, 2013, 4, pp.28-39, article ID 27648. ⟨10.4236/wet.2013.41005⟩. ⟨hal-00872038⟩

• Communication dans un congrès

Focused ion beam Ga3+ for the realization of piezoelectric PZT nano structures

Denis Remiens

Piezoelectric nano-structures (islands of dimensions in the lateral size range 50-500 nm) have been fabricated by Focused Ga3+ Ion Beam (FIB) etching on PbZr0.54Ti0.46O3 thin films obtained by magnetron sputtering. The degradation induced by the etching process is investigated through the evolution…

3rd International Conference on Nanotek & Expo, 2013, Las Vegas, NV, United States. ⟨hal-00947582⟩

• Article dans une revue

The effect of long-term working memory through personalization applied to free recall : Uncurbing the primacy-effect enthusiasm

Alessandro Guida, Doriane Gras, Y. Noel, Olivier Le Bohec, Christophe Quaireau, Stéphane Nicolas

In this study, a personalization method (Guida, Tardieu, & Nicolas, European Journal of Cognitive Psychology, 21: 862-896 2009) was applied to a free-recall task. Fifteen pairs of words, composed of an object and a location, were presented to 93 participants, who had to mentally associate…

Memory and Cognition, 2013, 41, pp.571-587. ⟨10.3758/s13421-012-0284-3⟩. ⟨halshs-01428585⟩

• Communication dans un congrès

«Growth and Characterization of New Piezoelectric Nanostructures with Low Environmental Impact»

R. Desfeux, A. Ferri, S. Saitzek, Z. Shao, A. Bayart, G. Declercq, Denis Remiens, J. Costecalde, D. Deresmes, David Troadec

Journées Nanosciences et Nanotechnologies du Nord-Ouest, 2013, Rennes, France. ⟨hal-01727062⟩

• Article dans une revue

Peroxynitrite activity of hemin-functionalized reduced graphene oxide

R. Oprea, S. Peteu, P. Subramanian, Qiang Wang, E. Pichonat, H. Happy, M. Bayachou, Rabah Boukherroub, Sabine Szunerits

Analyst, 2013, 138, pp.4345-4352. ⟨10.1039/C3AN00678F⟩. ⟨hal-00871895⟩

• Article dans une revue

Modeling of Ga1-xInxAs1-y-zNySbz/GaAs quantum well properties for near-infrared lasers

Abdelkader Aissat, Said Nacer, Farid Ykhlef, Jean-Pierre Vilcot

The aim of this work is to model the properties of GaInAsNSb/GaAs compressively strained structures. Indeed, Ga1−xInxAs1−y−zNySbz has been found to be a potentially superior material to GaInAsN for long wavelength laser dedicated to optical fiber communications. Furthermore, this material can be…

Materials Science in Semiconductor Processing, 2013, 16, pp.1936-1942. ⟨10.1016/j.mssp.2013.07.021⟩. ⟨hal-00871946⟩

• Article dans une revue

Toward highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Y. Tagro, B. Grimbert, D. Ducatteau, N. Rolland

International Journal of Microwave and Wireless Technologies, 2013, 5, pp.335-340. ⟨10.1017/S1759078713000342⟩. ⟨hal-00871899⟩

• Communication dans un congrès

Dielectric polarization 1/f noise in 0D MOS transistors and ion-sensitive field-effect transistors

N. Clement, K. Nishiguchi, A. Fujiwara, D. Vuillaume

22nd International Conference on Noise and Fluctuations, ICNF 2013, 2013, Montpellier, France. ⟨hal-00820950⟩