Publications

Affichage de 7651 à 7660 sur 16106


  • Communication dans un congrès

Monte Carlo analysis of thermal effects in self-switching diodes

J.F. Millithaler, I. Iniguez-De-La-Torre, T. Gonzalez, J. Mateos, P. Sangare, Guillaume Ducournau, Christophe Gaquière

9th Spanish Conference on Electron Devices, CDE 2013, 2013, Valladolid, Spain. pp.45-48, ⟨10.1109/CDE.2013.6481338⟩. ⟨hal-00806588⟩

  • Article dans une revue

Establishment of a derivatization method to quantify thiol function in sulfur-containing plasma polymer films

D. Thiry, R. Francq, D. Cossement, David Guérin, D. Vuillaume, R. Snyders

Langmuir, 2013, 29, pp.13183-13189. ⟨10.1021/la402891t⟩. ⟨hal-00903758⟩

  • Article dans une revue

Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene

Florian Godel, Emmanuelle Pichonat, Dominique Vignaud, Hicham Majjad, Dominik Metten, Yves Henry, Stéphane Berciaud, Jean-Francois Dayen, David Halley

Nanotechnology, 2013, 24 (47), pp.475708. ⟨10.1088/0957-4484/24/47/475708⟩. ⟨hal-00881293⟩

  • Article dans une revue

Dielectric properties by rectangular waveguide

M.D. Belrhiti, S. Bri, A. Nakheli, A. Mamouni

International Journal of Emerging Sciences, 2013, 3, pp.163-171. ⟨hal-00872091⟩

  • Article dans une revue

Hypersound damping in vitreous silica measured by ultrafast acoustics

S. Sadtler, Arnaud Devos, M. Foret

International Journal of Thermophysics, 2013, 34, pp.1785-1794. ⟨10.1007/s10765-013-1511-2⟩. ⟨hal-00877635⟩

  • Article dans une revue

Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, Virginie Hoel, Holger Kalisch, Andrei Vescan, Michael Heuken, Jean-Claude de Jaeger

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever…

IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩