Publications

• Article dans une revue

Different types of phase separation in binary monolayers of long chain alkyltrichlorosilanes on silicon oxide

S. Desbief, L. Patrone, D. Goguenheim, D. Vuillaume

RSC Advances, 2012, 2, pp.3014-3024. ⟨10.1039/C2RA01327D⟩. ⟨hal-00787367⟩

• Communication dans un congrès

Strain effect on the electronic properties of thiolated 10-nm-diameter facetted gold nanocrystals

N. Clement, S. Desbief, K. Smaali, J.P. Nys, M. Cordier, G. Patriarche, S. Lamant, J. Oden, P. Leclere, D. Vuillaume

6th International Meeting on Molecular Electronics, ElecMol'12, 2012, Grenoble, France. ⟨hal-00797692⟩

• Communication dans un congrès

Effect of strain relaxation on the drain conductance in AlGaN/GaN HEMTs

A. Bellakhdar, A. Telia, L. Semra, A. Soltani

1st International Conference on Engineering and Technology, ICET 2012, 2012, Cairo, Egypt. pp.1-5, ⟨10.1109/ICEngTechnol.2012.6396129⟩. ⟨hal-00801158⟩

• Article dans une revue

Bilayer Cr/Au contacts on n-GaN

L. Dobos, L. Toth, B. Pecz, Z.J. Horvath, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2012, 86, pp.769-772. ⟨10.1016/j.vacuum.2011.07.027⟩. ⟨hal-00790436⟩

• Article dans une revue

Direct characterization of native chemical ligation of peptides on hydrogenated silicon nanowires

N. Dendane, O. Melnyk, T. Xu, B. Grandidier, Rabah Boukherroub, D. Stievenard, Yannick Coffinier

Langmuir, 2012, 28, pp.13336-13344. ⟨10.1021/la3030217⟩. ⟨hal-00787470⟩

• Communication dans un congrès

Power line communication in aircraft : channel modeling and performance analysis

Virginie Degardin, M. Lienard, Pierre Degauque, I. Junqua, S. Bertuol

8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012, 2012, Playa del Carmen, Mexico. pp.1-3, ⟨10.1109/ICCDCS.2012.6188890⟩. ⟨hal-00812343⟩

• Communication dans un congrès

THz metamaterials and metasurfaces

Gabriel Moreno, Haian Sebai, Serkan Kaya, Abbas Ghaddar, Abdallah Chahadih, Ibrahim Türer, Mokhtar Zehar, Guillaume Ducournau, Jean-Francois Lampin, Renaud Leturcq, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820996⟩

• Article dans une revue

Elastic behaviour of inhomogeneities with size and shape different from their hosting cavities

S. Giordano, Pier Luca Palla, E. Cadelano, M. Brun

Mechanics of Materials, 2012, 44, pp.4-22. ⟨10.1016/j.mechmat.2011.07.015⟩. ⟨hal-00639826⟩

• Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩