Publications

Affichage de 8071 à 8080 sur 16064


  • Communication dans un congrès

Analysis of surface charging effects in passivated AlGaN/GaN HEMTS on SiC substrate

M. Gassoumi, O. Fathalla, B. Grimbert, Christophe Gaquière, H. Maaref

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00802567⟩

  • Article dans une revue

Carrier mobility in strained Ge nanowires

Yann-Michel Niquet, C. Delerue

Journal of Applied Physics, 2012, 112, pp.084301-1-4. ⟨10.1063/1.4759346⟩. ⟨hal-00787437⟩

  • Communication dans un congrès

Ventriloquism effect on distance auditory cues

N. Côté, V. Koehl, B. Paquier

11th Congrès Français d'Acoustique joint with 2012 Annual IOA Meeting, Acoustics 2012, 2012, Nantes, France. pp.1063-1067. ⟨hal-00801039⟩

  • Communication dans un congrès

100nm-gate InAlAs/InGaAs HEMTs on plastic flexible substrate with high cut-off frequencies

J.S. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

24th International Conference on Indium Phosphide and Related Materials, IPRM 2012, 2012, Santa Barbara, CA, United States. pp.233-236, ⟨10.1109/ICIPRM.2012.6403366⟩. ⟨hal-00801043⟩

  • Communication dans un congrès

In0.53Ga0.47As MOSFET with gate-first and gate-last process

J.J. Mo, Nicolas Wichmann, S. Bollaert

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801048⟩

  • Communication dans un congrès

Evidence of impurity impact ionization avalanche in P-type diamond

V. Mortet, A. Soltani, Nicolas Nolhier

11th Expert Meeting on Evaluation & Control of Coumpound Semiconductor Materials and Technologies, EXMATEC 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801157⟩

  • Communication dans un congrès

AlGaN/GaN based field effect transistors for terahertz detection and imaging

M. Sakowicz, M.B. Lifshits, O.A. Klimenko, D. Coquillat, N. Dyakonova, F. Teppe, Christophe Gaquière, M.A. Poisson, S. Delage, W. Knap

SPIE 2012 Photonics West, Gallium Nitride Materials and Devices VII, 2012, San Francisco, CA, United States. pp.82621V-1-5, ⟨10.1117/12.908236⟩. ⟨hal-00801202⟩

  • Communication dans un congrès

Mechanism of ohmic Cr/Ni/Au contact formation on p-GaN

L. Magdenko, G. Patriarche, David Troadec, O. Mauguin, E. Morvan, M.A. Di Forte-Poisson, K. Pantzas, A. Ougazzaden, A. Martinez, A. Ramdane

Materials Research Society Spring Meeting, MRS Spring 2012, Symposium D : Nanocontacts - Emerging Materials and Processing for Ohmicity and Rectification, 2012, San Francisco, CA, United States. ⟨hal-00798221⟩

  • Communication dans un congrès

[Invited] Can we achieve high power GaN-on-Si in the mmW range ?

F Medjdoub

48th Workshop on Compound Semiconductor Materials and Devices, WOCSEMMAD 2012, 2012, Napa Valley, CA, United States. ⟨hal-00797332⟩

  • Communication dans un congrès

Coupling effect of dielectric metamaterial dimer

F. Zhang, Véronique Sadaune, L. Kang, Q. Zhao, J. Zhou, D. Lippens

6th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics, Metamaterials 2012, 2012, St Petersburg, Russia. paper 195, 580-582. ⟨hal-00804693⟩