Publications

• Communication dans un congrès

Piezo-resistive ring-shaped AFM sensors with pico-newton force resolution

Z. Xiong, B. Walter, E. Mairiaux, M. Faucher, L. Buchaillot, Bernard Legrand

2nd International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2012, 2012, Xi'an, China. Paper ID 1200991, Best application paper award, 184-189. ⟨hal-00801105⟩

• Communication dans un congrès

A 1kPixel CMOS camera chip for 25fps real-time terahertz imaging applications

H. Sherry, J. Grzyb, Y. Zhao, R. Al Hadi, A. Cathelin, A. Kaiser, U. Pfeiffer

IEEE International Solid-State Circuits Conference, ISSCC 2012, 2012, San Francisco, CA, United States. pp.252-254, ⟨10.1109/ISSCC.2012.6176997⟩. ⟨hal-00801095⟩

• Communication dans un congrès

Band offsets : nano is not bulk

Y.M. Niquet, C. Delerue

15th International Workshop on Computational Electronics, IWCE-15, 2012, Madison, WI, United States. pp.3-4. ⟨hal-00801124⟩

• Communication dans un congrès

State of the art 200 GHz power measurements on SiGe:C HBT using an innovative load pull measurement setup

A. Pottrain, T. Lacave, D. Gloria, P. Chevalier, Christophe Gaquière

60th IEEE MTT-S International Microwave Symposium, IMS 2012, 2012, Montréal, Canada. pp.1-3, ⟨10.1109/MWSYM.2012.6259409⟩. ⟨hal-00801191⟩

• Communication dans un congrès

160W InAlN/GaN HEMTs amplifier at 2 GHz with optimized thermal management

Stéphane Piotrowicz, Olivier Jardel, Jean-Claude Jacquet, D. Lancereau, Raphaël Aubry, Erwan Morvan, Nicolas Sarazin, Jérémy Dufraisse, Charu Dua, Mourad Oualli, Eric Chartier, Marie-Antoinette Di Forte-Poisson, Christophe Gaquière, Sylvain Laurent Delage

We report on the realization and measurements of InAlN/GaN HEMTs on SiC substrate. At device level, load-pull power measurements were performed at 2 GHz on 2.2mm devices in CW mode. An output power of 10.5W (40.2dBm) with a PAE of 53% were reached. Then, an amplifier was realized using 36mm power…

34th IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2012, Oct 2012, La Jolla, CA, United States. pp.1-4, ⟨10.1109/CSICS.2012.6340059⟩. ⟨hal-00801142⟩

• Communication dans un congrès

Characterization on AlGaN/GaN/Si HEMTs devices passivated with SiN/SiO2

H. Mosbahi, M. Gassoumi, M.A. Zaidi, Vanessa Avramovic, Christophe Gaquière, B. Grimbert, H. Maaref

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801155⟩

• Communication dans un congrès

Contrôle passif des tubes par inter-corrélation de champ acoustique ambiant

S. Djili, Emmanuel Moulin, Jamal Assaad, F. Boubenider, Farouk Benmeddour

3ème Conférence Internationale sur le Soudage, le Contrôle Non Destructif et l'Industrie des Matériaux et Alliages, IC-WNDT-MI'12, 2012, Aïn El Turck-Oran, Algérie. pp.17-21. ⟨hal-00802648⟩

• Communication dans un congrès

An upper bound of soft decode and forward relaying over Rayleigh fading channels

H. Ben Chikha, Iyad Dayoub, S. Chaoui, R. Attia

16th WSEAS International Conference on Communications, part of CSCC'12, 2012, Kos Island, Greece. pp.485-489. ⟨hal-00802558⟩

• Communication dans un congrès

Time-domain semiconductor structure simulation based on 2D/3D coupled electromagnetism/transport modeling

Christophe Dalle

Advanced Electromagnetics Symposium, AES 2012, 2012, Paris, France. pp.116-120. ⟨hal-00802589⟩

• Communication dans un congrès

An optimized pilots position method for V2X synchronization

A. Sassi, F. Charfi, L. Kamoun, Yassin El Hillali, Atika Rivenq

6th International Symposium on Signal, Image, Video and Communications, ISIVC 2012, 2012, Valenciennes, France. paper ID 43, 171-175. ⟨hal-00802522⟩