Publications

• Article dans une revue

Trapping effects dependence on electron confinement in ultrashort GaN-on-Si high-electron-mobility transistors

F Medjdoub, Damien Ducatteau, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland

We report on the dependence of trapping effects on electron confinement in ultrashort AlN/GaN-on-Si high-electron-mobility transistors grown on 100mm silicon substrates. The use of a back barrier allows a drastic reduction of the current collapse while offering high current density and high voltage…

Japanese Journal of Applied Physics, part 2 : Letters, 2012, 5 (3), pp.034103-1-3. ⟨10.1143/APEX.5.034103⟩. ⟨hal-00786953⟩

• Communication dans un congrès

Towards highly scaled AlN/GaN-on-silicon devices for millimeter wave applications

F Medjdoub, Malek Zegaoui, B. Grimbert, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

In this work, the possibility to achieve GaN-on-Si devices for millimeter wave applications operating at high bias is demonstrated. It is shown that highly scaled AlN/GaN-on-Si double heterostructure enables to significantly improve the electron confinement under high electric field as compared to…

7th European Microwave Integrated Circuits Conference, EuMIC 2012, Oct 2012, Amsterdam, Netherlands. pp.321-324. ⟨hal-00814972⟩

• Communication dans un congrès

Microstrip EBG structures for millimeter-wave range with a broadband coplanar waveguide to microstrip transition

Magdalena Chudzik, Abbas Ghaddar, Israel Arnedo, Aintzane Lujambio, Ivan Arregui, Fernando Teberio, Miguel A. G. Laso, Txema Lopetegi, Tahsin Akalin

International Symposium on Frontiers in THz Technology, FTT 2012, 2012, Nara, Japan. ⟨hal-00820993⟩

• Communication dans un congrès

Throughput maximization approach for O-MIMO systems using MGDM technique

M. Awad, W. Hamouda, Iyad Dayoub

IEEE Global Communications Conference, GLOBECOM 2012, 2012, Anaheim, CA, United States. pp.2953-2958, ⟨10.1109/GLOCOM.2012.6503566⟩. ⟨hal-00820960⟩

• Article dans une revue

Anomaly and defects characterization by I-V and current deep level transient spectroscopy of Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors

S. Saadaoui, M.M. Ben Salem, M. Gassoumi, H. Maaref, Christophe Gaquière

In this paper, we report static electric drain-source current-voltage measurements for different gate voltages and at different temperatures, performed on Al0.25Ga0.75N/GaN/SiC high electron-mobility transistors (HEMT). The results show the presence of kink and collapse effects. We have…

Journal of Applied Physics, 2012, 111 (7), pp.073713. ⟨10.1063/1.3702458⟩. ⟨hal-00787870⟩

• Article dans une revue

Comparative study of erbium disilicide thin films grown in situ under ultrahigh vacuum or ex situ with a capping layer

N. Reckinger, C.A. Dutu, Xing Tang, Emmanuel Dubois, Dmitri Yarekha, S. Godey, L. Nougaret, A. Laszcz, J. Ratajczak, J.P. Raskin

Thin Solid Films, 2012, 520, pp.4501-4505. ⟨10.1016/j.tsf.2012.02.076⟩. ⟨hal-00787381⟩

• Article dans une revue

Ta/TiN midgap full-metal single gate fabrication using combined chlorine-based plasma and highly selective chemical metal etching for decananometer CMOS technology

Z.K. Chen, Emmanuel Dubois, F. Ravaux, Francois Danneville

High permittivity dielectric and metal gate are now the most demanded in advanced CMOS technology to overcome conventional polysilicon gate structure drawbacks. However, existing metal gate fabrication approaches are not capable to meet all the demands in terms of material engineering or…

Microelectronic Engineering, 2012, 97, pp.280-284. ⟨10.1016/j.mee.2012.04.035⟩. ⟨hal-00790412⟩

• Communication dans un congrès

Characterization and analysis of different surface passivation for AlGaN/GaN HEMTs

F. Lecourt, N. Defrance, S. Rennesson, Virginie Hoel, Y. Cordier, Jean-Claude de Jaeger

36th Workshop on Compound Semiconductor Devices and Integrated Circuits, WOCSDICE 2012, 2012, Porquerolles, France. pp.1-2. ⟨hal-00801154⟩

• Communication dans un congrès

Vibrational distribution function of N2(C3Πu, v') state in N2-Ar discharge created by a RF helical coupling device

A. Annusova, C. Foissac, J. Kristof, P. Veis, P. Supiot

XXI Europhysics Conference on Atomic and Molecular Physics of Ionized Gases, ESCAMPIG 2012, 2012, Viana do Castelo, Portugal. paper P1.1.10, 1-2. ⟨hal-00802624⟩

• Communication dans un congrès

New insight into ultra-sharp boron interfaces for delta-doped diamond structures

C. Mer-Calfati, Nicolas Tranchant, J.C. Gerbedoen, F. Jomard, Jean-Charles Arnault, J. Pernot

International Conference on Diamond and Carbon Materials, ICDCM 2012, 2012, Granada, Spain. ⟨hal-00798198⟩