Publications

Affichage de 8381 à 8390 sur 16064


  • Article dans une revue

480-GHz fmax in InP/GaAsSb/InP DHBT with new base isolation µ-airbridge design

M. Zaknoune, E. Mairiaux, Yannick Roelens, N. Waldhoff, U. Rouchy, P. Frijlink, M. Rocchi, H. Maher

IEEE Electron Device Letters, 2012, 33, pp.1381-1383. ⟨10.1109/LED.2012.2210187⟩. ⟨hal-00786893⟩

  • Article dans une revue

Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

EPL - Europhysics Letters, 2012, 97, pp.68011-1-6. ⟨10.1209/0295-5075/97/68011⟩. ⟨hal-00786985⟩

  • Article dans une revue

Hexagonal boron nitride nanowalls : physical vapour deposition, 2D/3D morphology and spectroscopic analysis

B. Benmoussa, J. d'Haen, C. Borschel, J. Barjon, A. Soltani, V. Mortet, C. Ronning, M. d'Olieslaeger, H.G. Boyen, K. Haenen

Journal of Physics D: Applied Physics, 2012, 45, pp.135302-1-8. ⟨10.1088/0022-3727/45/13/135302⟩. ⟨hal-00788169⟩

  • Article dans une revue

435mS/mm transconductance for AlGaN/GaN HEMTs on HR-Si substrate with optimised gate-source spacing

S. Bouzid, H. Maher, N. Defrance, Virginie Hoel, F. Lecourt, M. Renvoise, Jean-Claude de Jaeger, P. Frijlink

Electronics Letters, 2012, 48, pp.69-71. ⟨10.1049/el.2011.3605⟩. ⟨hal-00787867⟩

  • Article dans une revue

Influence of thermal and fast neutron irradiation on DC electrical performances of AlGaN/GaN transistors

F. Berthet, Y. Guhel, B. Boudart, H. Gualous, J.L. Trolet, M. Piccione, Christophe Gaquière

IEEE Transactions on Nuclear Science, 2012, 59, pp.2556-2561. ⟨10.1109/TNS.2012.2209894⟩. ⟨hal-00788175⟩

  • Article dans une revue

Robustness of high-resolution channel parameter estimators in presence of dense multipath components

E. Tanghe, D.P. Gaillot, W. Joseph, M. Lienard, Pierre Degauque, L. Martens

Electronics Letters, 2012, 48, pp.130-132. ⟨10.1049/el.2011.3454⟩. ⟨hal-00788224⟩

  • Article dans une revue

Monte Carlo study of self-heating in nanoscale devices

T. Sadi, R.W. Kelsall, N.J. Pilgrim, Jean-Luc Thobel, F. Dessenne

Journal of Computational Electronics, 2012, 11, pp.118-128. ⟨10.1007/s10825-012-0395-x⟩. ⟨hal-00788225⟩

  • Article dans une revue

Dielectric, ferroelectric and piezoelectric properties of 100-oriented Pb0.4Sr0.6TiO3 thin film sputtered on LaNiO3 electrode

X. Lei, Denis Remiens, N. Sama, Y. Chen, C.L. Mao, X.L. Dong, G.S. Wang

Journal of Crystal Growth, 2012, 347, pp.15-18. ⟨10.1016/j.jcrysgro.2012.03.026⟩. ⟨hal-00788337⟩

  • Article dans une revue

Theoretical and experimental performances evaluation of a new multiple access technique for optical fibers

C. Tatkeu, D. Loum, Iyad Dayoub, M. Heddebaut, Jean-Michel Rouvaen

International Journal of Information Engineering, 2012, 2, pp.129-137. ⟨hal-00788186⟩

  • Article dans une revue

Experimental investigation on channel characteristics in tunnel environment for time reversal ultra wide band techniques

C. Garcia-Pardo, M. Lienard, Pierre Degauque, J.M. Molina-Garcia-Pardo, L. Juan-Llacer

Radio Science, 2012, 47, pp.RS1009-1-9. ⟨10.1029/2011RS004893⟩. ⟨hal-00788200⟩