International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is…

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩

Article dans une revue

Sliding Droplets on Superomniphobic Zinc Oxide Nanostructures

Guillaume Perry, Yannick Coffinier, V. Thomy, Rabah Boukherroub

Langmuir, 2011, 28 (1), pp.389-395. ⟨10.1021/la2035032⟩. ⟨hal-02388424⟩

Communication dans un congrès

Optimization of carrier multiplication in quantum dots for more efficient solar cells

Christophe Delerue, Guy Allan

Reviewing recent theoretical works, we propose a strategy to optimize the carrier multiplication in semiconductor quantum dots. This strategy is discussed using calculations on quantum dots of a semi-metal, α-Sn.

Workshop on Semiconductor Nanostructures for Photovoltaics, Dec 2011, Hangzhou, China. ⟨hal-00807253⟩

Thèse

ELABORATION DE GRAPHENE PAR EPITAXIE PAR JETS MOLECULAIRES ET CARACTERISATION, GROWTH OF GRAPHENE BY MOLECULAR BEAM EPITAXY AND CHARACTERIZATION

Eléonore Moreau

Depuis les premiers travaux publiés en 2004, le graphène est obtenu par trois principales techniques, l'exfoliation, le dépôt chimique en phase vapeur et la graphitisation du carbure de silicium. Seules les deux dernières sont adaptées aux technologies standards de la microélectronique. Une…, Since the first publications in 2004, three techniques are mainly used to grow graphene, exfoliation, chemical vapor deposition and graphitization on silicon carbide. Only the two latter ones are suitable with microelectronics technological processes. In this thesis, another method of growth is…

Micro et nanotechnologies/Microélectronique. Université des Sciences et Technologie de Lille - Lille I, 2011. Français. ⟨NNT : ⟩. ⟨tel-00665851⟩

Communication dans un congrès

Electrical and structural properties of as-grown core-shell silicon nanowires

Yannick Lambert, Tao Xu, Di Zhou, B. Grandidier, D. Stievenard, Christophe Krzeminski, Abdellatif Akjouj, Yan Pennec, Bahram Djafari-Rouhani, G. Patriarche, Wanghua Chen, Philippe Pareige, D.H. Murthy, T.J. Savenije

Workshop on Semiconductor Nanostructures for Photovoltaics, Dec 2011, Hangzhou, China. ⟨hal-00807241⟩

Article dans une revue

Band gaps and cavity modes in dual phononic and photonic strip waveguides

Yan Pennec, Bahram Djafari-Rouhani, C. Li, J.M. Escalante, Alejandro Martínez, Sarah Benchabane, Vincent Laude, Nikos Papanikolaou

We discuss theoretically the simultaneous existence of phoxonic, i.e., dual phononic and photonic, band gaps in a periodic silicon strip waveguide. The unit-cell of this one-dimensional waveguide contains a hole in the middle and two symmetric stubs on the sides. Indeed, stubs and holes are…

AIP Advances, 2011, 1 (4), pp.041901. ⟨10.1063/1.3675799⟩. ⟨hal-00759506⟩