Publications

Affichage de 8541 à 8550 sur 16133


  • Article dans une revue

Small polaron migration associated multiple dielectric responses of multiferroic DyMnO3 polycrystal in low temperature region

J. Yang, J. He, J.Y. Zhu, W. Bai, Luyan Sun, X.J. Meng, X.D. Tang, C.G. Duan, Denis Remiens, J.H. Qiu, J.H. Chu

Applied Physics Letters, 2012, 101, pp.222904-1-5. ⟨10.1063/1.4768790⟩. ⟨hal-00788345⟩

  • Article dans une revue

Electrical properties of InAs1-xSbx and InSb nanowires grown by molecular beam epitaxy

C. Thelander, P. Caroff, S.R. Plissard, K.A. Dick

Applied Physics Letters, 2012, 100, pp.232105-1-4. ⟨10.1063/1.4726037⟩. ⟨hal-00786987⟩

  • Article dans une revue

Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations

E. Lampin, Q.H. Nguyen, P.A. Francioso, F. Cleri

Applied Physics Letters, 2012, 100, pp.131906-1-4. ⟨10.1063/1.3698325⟩. ⟨hal-00787869⟩

  • Article dans une revue

Boron distribution in the core of Si nanowire grown by chemical vapor deposition

W. Chen, V.G. Dubrovskii, X.L. Liu, T. Xu, Rodrigue Lardé, J.P. Nys, B. Grandidier, D. Stievenard, G. Patriarche, Philippe Pareige

The boron dopant distribution in Si nanowires grown by the Au-catalyzed chemical vapor deposition is characterized by laser-assisted atom probe tomography. A convenient and an effective method for performing the atom probe tomography of an individual nanowire is developed. Using this technique, we…

Journal of Applied Physics, 2012, 111 (9), pp.094909. ⟨10.1063/1.4714364⟩. ⟨hal-00787433⟩

  • Brevet

Mémoire magnétoélectrique

Nicolas Tiercelin, Yannick Dusch, Philippe Pernod, Vladimir Preobrazhensky

N° de brevet: FR2961632 (A1). 2011. ⟨hal-00654806⟩

  • Article dans une revue

Level repulsion and evanescent waves in sonic crystals

V. Romero-Garcia, Jerome O. Vasseur, Anne-Christine Hladky, Lluis Miquel Garcia-Raffi, J.V. Sanchez-Perez

This work theoretically and experimentally reports the evanescent connections between propagating bands in periodic acoustic materials. The complex band structures obtained by solving for the k(ω) problem reveal a complete interpretation of the propagation properties of these systems. The…

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 84, pp.212302-1-4. ⟨10.1103/PhysRevB.84.212302⟩. ⟨hal-00783380⟩

  • Communication dans un congrès

The transverse electromagnetic horn antenna as an efficient THz pulse emitter

Jean-Francois Lampin, Emilien Peytavit, Tahsin Akalin, Guillaume Ducournau, Jens Klier, Sabine Wohnsiedler, Joachim Jonuscheit, René Beigang

We have fabricated a new photoconductive antenna based on a transverse electromagnetic horn and low temperature grown GaAs. It has been tested with a time-domain terahertz setup. The horn was used as the emitter and a standard dipole photoconductive antenna was used as the receiver. The spectrum…

International Conference on Infrared, Millimeter and THz Waves, IRMMW-THz 2011, Oct 2011, Houston, TX, United States. paper Tu3D.2, 1-2, ⟨10.1109/irmmw-THz.2011.6105067⟩. ⟨hal-00800486⟩

  • Communication dans un congrès

A 300 GHz InP/GaAsSb/InP HBT for high data rate applications

Maher, Hassan, Vincent Delmouly, U. Rouchy, Michel Renvoisé, Peter Frijlink, Derek Smith, M. Zaknoune, Damien Ducatteau, Vanessa Avramovic, André Scavennec, Jean Godin, Muriel Riet, Cristell Maneux, Bertrand Ardouin

In this paper, a fully passivated InP/GaAsSb/InP DHBT on InP substrate with excellent DC and RF performance is developed. The epi-layers are grown by the MOCVD technique, with a base layer of 25nm and a collector layer of 130nm. The emitter width of the transistor is 0.35μm and the base contact is…

Conference Proceedings - International Conference on Indium Phosphide and Related Materials, Dec 2011, Berlin, Germany. pp.Art n°68. ⟨hal-00671674⟩