Publications

• Autre publication scientifique

Advances in Historical Studies [Editor in Chief 1/1]

Raffaele Pisano

2012. ⟨hal-04511057⟩

• Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩

• Proceedings/Recueil des communications

LT GaAs nanophotoswitches for microwave sampling

Didier Decoster, Antoine Pagies, Jean-Francois Lampin, X. Wallart, Vincent Magnin, Joseph Harari, Charlotte Tripon-Canseliet, S. Faci, Stéphane Formont, Loic Ménager, Jean Chazelas, Guy Jestin

SPIE 2012 Photonics West, Quantum Sensing and Nanophotonic Devices IX, 8268-83, 2012. ⟨hal-04444977⟩

• Communication dans un congrès

Patterning process and actuation in open air of micro-beam actuator based on conducting IPNs

Alexandre Khaldi, Cedric Plesse, Caroline Soyer, Claude Chevrot, Dominique Teyssie, Frederic Vidal, Eric Cattan

SPIE Smart Structures and Materials + Nondestructive Evaluation and Health Monitoring, 2012, San Diego, United States. ⟨10.1117/12.915086⟩. ⟨hal-01829117⟩

• Article dans une revue

A 10-MHz GaN HEMT DC/DC boost converter for power amplifier applications

F. Gamand, M.D. Li, Christophe Gaquière

IEEE Transactions on Circuits and Systems I: Regular Papers, 2012, 59, pp.776-779. ⟨10.1109/TCSII.2012.2228397⟩. ⟨hal-00787876⟩

• Communication dans un congrès

Modulation of the g-factor in bottom-gated InAs nanowire quantum dots

A. Ghaddar, B. Fülöp, P. Caroff, David Troadec, X. Wallart, R. Leturcq

31st International Conference on the Physics of Semiconductors, ICPS 2012, 2012, Zurich, Switzerland. ⟨hal-00798182⟩

• Communication dans un congrès

Magnetically induced quenching conductivity effect in InAs nanowires

V.S. Prudkovskiy, F. Rossella, Bertrand Raquet, Michel Goiran, V. Bellani, R. Leturcq, P. Caroff, D. Ercolani, L. Sorba

20th International Conference on ''High Magnetic Fields in Semiconductor Physics'', HMF-20, 2012, Chamonix Mont-Blanc, France. ⟨hal-00798152⟩

• Article dans une revue

Investigation of indium nitride for micro-nanotechnology

Anisha Gokarna, Jean-Francois Lampin, Dominique Vignaud, El Hadj Dogheche, Didier Decoster, Sandra Ruffenach, Olivier Briot, Matthieu Moret

We present a study of non–intentionally doped InN epilayers directly grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) technique. Structural and optical characterisations of this sample have been conducted by SEM, temperature–dependent photoluminescence and time…

International Journal of Nanotechnology, 2012, 9 (10-12), pp.900-906. ⟨10.1504/IJNT.2012.049454⟩. ⟨hal-00787438⟩

• Article dans une revue

Demonstration of defect-free and composition tunable GaxIn1-xSb nanowires

S. Gorji Ghalamestani, M. Ek, B. Ganjipour, C. Thelander, J. Johansson, P. Caroff, K.A. Dick

Nano Letters, 2012, 12, pp.4914-4919. ⟨10.1021/nl302497r⟩. ⟨hal-00786991⟩

• Communication dans un congrès

Photo-modulated field emission of carbon nanotubes cold cathodes

F. Andrianiazy, J.P. Mazellier, L . Gangloff, P. Legagneux, P. Ponnard, N. Martinez, C . Bourat, X.L. Han, Jean-Francois Lampin

25th International Vacuum Nanoelectronics Conference, IVNC 2012, 2012, Jeju, South Korea. pp.46-49, ⟨10.1109/IVNC.2012.6316834⟩. ⟨hal-00803103⟩