Publications

Affichage de 8571 à 8580 sur 16170


  • Article dans une revue

Bilayer Cr/Au contacts on n-GaN

L. Dobos, L. Toth, B. Pecz, Z.J. Horvath, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua

Vacuum, 2012, 86, pp.769-772. ⟨10.1016/j.vacuum.2011.07.027⟩. ⟨hal-00790436⟩

  • Article dans une revue

Wave propagation in the circumferential direction of general multilayered piezoelectric cylindrical plates

J.G. Yu, Jean-Etienne Lefebvre, Y.Q. Guo, L. Elmaimouni

IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2012, 59, pp.2498-2508. ⟨10.1109/TUFFC.2012.2482⟩. ⟨hal-00790358⟩

  • Communication dans un congrès

Quick estimation of the fundamental resonance of an aircraft exposed to HPEM with hybrid method

Samuel Leman, Alain Reineix, Madjid Mahmoudi, Yannick Poire, Frédéric Hoëppe, Bernard Démoulin

European electromagnetics, EuroEM 2012, Jul 2012, Toulouse, France. pp.Inconnu. ⟨hal-00780612⟩

  • Communication dans un congrès

Characterization of PtSi nanowires transferred onto organic film

A. Lecavelier Des Etangs-Levallois, V. Passi, Z.K. Chen, François Morini, Emmanuel Dubois

38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797774⟩

  • Communication dans un congrès

Third-order complex amplitudes tracking loop for slow fading channel estimation

H.Q. Shu, L. Ros, E.P. Simon

19th International Conference on Telecommunications, ICT 2012, 2012, Jounieh, Lebanon. pp.1-6, ⟨10.1109/ICTEL.2012.6221221⟩. ⟨hal-00802585⟩

  • Communication dans un congrès

Characterization of the state of a droplet at a micro-textured silicon wafer using a finite difference time-domain (FDTD) method

N.M. Saad, B. Merheb, Georges Nassar, Pierre Campistron, Julien Carlier, M. Ajaka, Bertrand Nongaillard

In this study, we introduce a finite difference time domain method to study the propagation and reflection of an acoustic wave on smooth and micro-textured silicon surfaces in interaction with droplets in different states. This will enable numerical investigations of interfaces composed of…

International Symposium on Ultrasound in the Control of Industrial Processes, UCIP 2012, 2012, Madrid, Spain. pp.012052-1-4, ⟨10.1088/1757-899X/42/1/012052⟩. ⟨hal-00802626⟩

  • Autre publication scientifique

Advances in Historical Studies [Editor in Chief 1/1]

Raffaele Pisano

2012. ⟨hal-04511057⟩

  • Article dans une revue

AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs

L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart

Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩

  • Article dans une revue

Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors

Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden

A GaN/ultrathin BGaN/GaN heterojunction is used in AlGaN/GaN high electron mobility transistors (HEMTs) to provide an electrostatic barrier to electrons and to improve the confinement of the 2-dimensional electron gas. BGaN back-barrier layers limit leakage in the GaN buffer thanks to two effects:…

Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩