Publications
Affichage de 8571 à 8580 sur 16170
Bilayer Cr/Au contacts on n-GaN
L. Dobos, L. Toth, B. Pecz, Z.J. Horvath, Z.E. Horvath, A.L. Toth, B. Beaumont, Z. Bougrioua
Vacuum, 2012, 86, pp.769-772. ⟨10.1016/j.vacuum.2011.07.027⟩. ⟨hal-00790436⟩
Wave propagation in the circumferential direction of general multilayered piezoelectric cylindrical plates
J.G. Yu, Jean-Etienne Lefebvre, Y.Q. Guo, L. Elmaimouni
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, 2012, 59, pp.2498-2508. ⟨10.1109/TUFFC.2012.2482⟩. ⟨hal-00790358⟩
Quick estimation of the fundamental resonance of an aircraft exposed to HPEM with hybrid method
Samuel Leman, Alain Reineix, Madjid Mahmoudi, Yannick Poire, Frédéric Hoëppe, Bernard Démoulin
European electromagnetics, EuroEM 2012, Jul 2012, Toulouse, France. pp.Inconnu. ⟨hal-00780612⟩
Characterization of PtSi nanowires transferred onto organic film
A. Lecavelier Des Etangs-Levallois, V. Passi, Z.K. Chen, François Morini, Emmanuel Dubois
38th International Micro & Nano Engineering Conference, MNE 2012, 2012, Toulouse, France. ⟨hal-00797774⟩
Third-order complex amplitudes tracking loop for slow fading channel estimation
H.Q. Shu, L. Ros, E.P. Simon
19th International Conference on Telecommunications, ICT 2012, 2012, Jounieh, Lebanon. pp.1-6, ⟨10.1109/ICTEL.2012.6221221⟩. ⟨hal-00802585⟩
Characterization of the state of a droplet at a micro-textured silicon wafer using a finite difference time-domain (FDTD) method
N.M. Saad, B. Merheb, Georges Nassar, Pierre Campistron, Julien Carlier, M. Ajaka, Bertrand Nongaillard
International Symposium on Ultrasound in the Control of Industrial Processes, UCIP 2012, 2012, Madrid, Spain. pp.012052-1-4, ⟨10.1088/1757-899X/42/1/012052⟩. ⟨hal-00802626⟩
Robustness of high-resolution channel parameter estimators in presence of dense multipath components
Emmeric Tanghe, Davy Gaillot, Wout Joseph, M. Lienard, Pierre Degauque, Luc Martens
4th COST IC1004 Management Committee and Scientific Meeting, 2012, Lyon, France. ⟨hal-00961459⟩
AlSb nucleation induced anisotropic electron mobility in AlSb/InAs heterostructures on GaAs
L. Desplanque, S. El Kazzi, J.L. Codron, Y. Wang, P. Ruterana, G. Moschetti, J. Grahn, X. Wallart
Applied Physics Letters, 2012, 100, pp.262103-1-4. ⟨10.1063/1.4730958⟩. ⟨hal-00786990⟩
Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors
Vinod Ravindran, Mohamed Boucherit, Ali Soltani, Simon Gautier, Tarik Moudakir, Jeramy Dickerson, Paul L. Voss, Marie-Antoinette Di Forte-Poisson, Jean-Claude de Jaeger, Abdallah Ougazzaden
Applied Physics Letters, 2012, 100, pp.243503-1-4. ⟨10.1063/1.4729154⟩. ⟨hal-00787871⟩