Publications
Affichage de 8841 à 8850 sur 16170
RF characterization of epitaxial graphene nano-ribbon field effect tansistors
N. Meng, J. Ferrer-Fernandez, O. Lancry, E. Pichonat, D. Vignaud, Gilles Dambrine, H. Happy
IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. 1-3, selected as finalist of best student paper competition, ⟨10.1109/MWSYM.2011.5972627⟩. ⟨hal-00799963⟩
TEM analysis of the dislocations mechanisms in III-V heterostructures grown by molecular beam epitaxy
Y. Wang, M.P. Chauvat, P. Ruterana, L. Desplanque, X. Wallart
Materials Research Society Spring Meeting, MRS Spring 2011, Symposium RR : Fundamental science of defects and microstructure in advanced materials for energy, 2011, San Francisco, CA, United States. ⟨hal-00807156⟩
Strain relaxation at the GaSb/GaAs and GaSb/GaP interfaces
L. Desplanque, S. El Kazzi, Christophe Coinon, Y. Wang, P. Ruterana, X. Wallart
23rd International Conference on Indium Phosphide and Related Materials, IPRM 2011, 2011, Berlin, Germany. ⟨hal-00807153⟩
Alternating current magnetoresistance for determination of electron mobility and concentration under the gate in submicrometer Si and GaN field effect transistors
R. Tauk, W. Knap, J. Lusakowski, M. Sakowicz, Z. Bougrioua, M. Aziz, P. Lorenzini, F. Boeuf, T. Skotnicki
Journées Franco-Libanaises Physique et Interfaces, JFLPI, 2011, Villeneuve d'Ascq, France. ⟨hal-00807634⟩
[Invited] AlGaN/GaN and InAlN/GaN HEMTs technology for high frequency wireless communication and applications needing conformability
Jean-Claude de Jaeger, Virginie Hoel, Marie Lesecq, N. Defrance, F. Lecourt, Y. Douvry, Christophe Gaquière, H. Maher, S. Bouzid, M. Heuken, C. Giesen, N. Ketteniss, H. Behmenburg, M. Eickelkamp, A. Vescan, Y. Cordier, A. Ebongue
European Microwave Week, EuMIC, Workshop W09 - Wideband GaN devices and applications, 2011, Manchester, United Kingdom. ⟨hal-00807597⟩
Millimeter-wave field-effect transistors produced using high-purity semiconducting single-walled carbon nanotubes
H. Happy, L. Nougaret, Vincent Derycke, Gilles Dambrine
IEEE MTT-S International Microwave Symposium, IMS 2011, 2011, Baltimore, MD, United States. pp.1-4, ⟨10.1109/MWSYM.2011.5972794⟩. ⟨hal-00799792⟩
50nm multi-gate In0.53Ga0.47As MOSFET with Ft of 150GHz
J.J. Mo, Nicolas Wichmann, Yannick Roelens, M. Zaknoune, L. Desplanque, X. Wallart, S. Bollaert
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799699⟩
APTS assisted carbon nanotubes thin layers on a polymer substrate
J. Thielleux, H. Happy
20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799698⟩
Temperature and frequency characterization of InAs nanowire and HfO2 interface using capacitance-voltage method
G. Astromskas, K. Storm, P. Caroff, M. Borgström, E. Lind, L.E. Wernersson
Microelectronic Engineering, 2011, 88, pp.444-447. ⟨10.1016/j.mee.2010.08.010⟩. ⟨hal-00592100⟩
Systèmes radiofréquences avancés pour communication inter-puces multi-gigabits à 60GHz
S. Foulon, Christophe Loyez, S. Pruvost, N. Rolland
17èmes Journées Nationales Micro-ondes, JNM 2011, 2011, France. papier 274, 2E8, 1-3. ⟨hal-00597147⟩