Publications
Affichage de 8851 à 8860 sur 16170
Etude et optimisation de dispositifs à base de matériaux faible gap pour applications hautes fréquences et ultra faible consommation
Albert M.D. Noudeviwa
2011. ⟨hal-00799384⟩
Phase-controlling properties in phononic crystals
N. Swinteck, S. Bringuier, J.F. Robillard, Jerome O. Vasseur, Anne-Christine Hladky, P.A. Deymier
1st International Conference on Phononic Crystals, Metamaterials and Optomechanics, PHONONICS 2011, 2011, Santa Fe, NM, United States. Paper Phononics-2011-0069, 164-165. ⟨hal-00799670⟩
Golden ratio-based and tapered diptera inspired wings : their design and fabrication using standard MEMS technology
X.Q. Bao, Eric Cattan
Journal of Bionic Engineering, 2011, 8, pp.174-180. ⟨10.1016/S1672-6529(11)60023-1⟩. ⟨hal-00603032⟩
Correlation between hysteresis phenomena and hole-like trap in capacitance-voltage characteristics of AlGaN/GaN of Schottky barrier diode
M. Gassoumi, S. Saadaoui, M.M. Ben Salem, Christophe Gaquière, H. Maaref
European Physical Journal: Applied Physics, 2011, 55, pp.30101-1-4. ⟨10.1051/epjap/2011110136⟩. ⟨hal-00639884⟩
Variations in the work function of doped single- and few-layer graphene assessed by Kelvin probe force microscopy and density functional theory
D. Ziegler, P. Gava, J. Güttinger, F. Molitor, L. Wirtz, M. Lazzeri, A.M. Saitta, A. Stemmer, Francesco Mauri, C. Stampfer
Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.235434-1-7. ⟨10.1103/PhysRevB.83.235434⟩. ⟨hal-00639882⟩
[Invited paper] InSb nanowire field-effect transistors and quantum-dot devices
H.A. Nilsson, M.T. Deng, P. Caroff, C. Thelander, L. Samuelson, L.E. Wernersson, H.Q. Xu
IEEE Journal of Selected Topics in Quantum Electronics, 2011, 17 (4), pp.907-914. ⟨10.1109/JSTQE.2010.2090135⟩. ⟨hal-00639823⟩
Low-noise microwave performance of AlN/GaN HEMTs grown on silicon substrate
F Medjdoub, Nicolas Waldhoff, Malek Zegaoui, B. Grimbert, N. Rolland, Paul-Alain Rolland
IEEE Electron Device Letters, 2011, 32 (9), pp.1230-1232. ⟨10.1109/LED.2011.2161261⟩. ⟨hal-00639806⟩
InAs/AlSb HEMTs for cryogenic LNAs at ultra-low power dissipation
G. Moschetti, N. Wadefalk, P.A. Nilsson, Yannick Roelens, A. Noudeviwa, L. Desplanque, X. Wallart, Francois Danneville, Gilles Dambrine, S. Bollaert, J. Grahn
Solid-State Electronics, 2011, 64, pp.47-53. ⟨10.1016/j.sse.2011.06.048⟩. ⟨hal-00639807⟩
Effect of dimensional parameters on the current of MSM photodetector
Abdel-Djawad Boumediène Zebentout, Zouaoui Bensaad, Abdelkader Aissat, Didier Decoster
Microelectronics Journal, 2011, 42, pp.1006-1009. ⟨10.1016/j.mejo.2011.05.002⟩. ⟨hal-00639881⟩