Publications

• Article dans une revue

Dielectric dispersion of BaSrTiO3 thin film from centimeter to submillimeter wavelengths

Grégory Houzet, Karine Blary, Sylvie Lepilliet, Didier Lippens, Ludovic Burgnies, Gabriel Vélu, Jean-Claude Carru, Edwin Nguema Agnandji, Patrick Mounaix

The dielectric dispersion of ferroelectric BaxSr1-xTiO3 (BST) thin film in a paraelectric phase was characterized from centimeter to submillimeter wavelengths. To this aim, interdigitated capacitors were patterned on a micrometer scale onto a BST layer with a barium concentration of 0.5 and were…

Journal of Applied Physics, 2011, 109 (1), pp.014116. ⟨10.1063/1.3531534⟩. ⟨hal-00572636⟩

• Article dans une revue

Realization of ultra dense arrays of vertical silicon NWs with defect free surface and perfect anisotropy using a top-down approach

X.L. Han, G. Larrieu, Pier-Francesco Fazzini, Emmanuel Dubois

Microelectronic Engineering, 2011, 88, pp.2622-2624. ⟨10.1016/j.mee.2010.12.102⟩. ⟨hal-00795901⟩

• Article dans une revue

Recent results on organic-based molecular memories

B. de Salvo, J. Buckley, D. Vuillaume

Current Applied Physics, 2011, 11, pp.e49-e57. ⟨10.1016/j.cap.2010.11.122⟩. ⟨hal-00639856⟩

• Article dans une revue

Functionalization of silicon nanowires for specific sensing

V. Passi, Emmanuel Dubois, C. Celle, S. Clavaguera, J.P. Simonato, J.P. Raskin

Thanks to their large surface-to-volume ratio, silicon nanowires (Si NWs) are extremely sensitive to all phenomena which could alter their surface potential and charge distribution. Those surface variations lead to a change of the Si NWs equivalent conductance. The use of the output conductance of…

ECS Transactions, 2011, 35, pp.313-318. ⟨10.1149/1.3570811⟩. ⟨hal-00591351⟩

• Article dans une revue

Microwave performance of 100 nm-gate In0.53Ga0.47As/In0.52Al0.48As high electron mobility transistors on plastic flexible substrate

J. Shi, Nicolas Wichmann, Yannick Roelens, S. Bollaert

Applied Physics Letters, 2011, 99, pp.203505-1-3. ⟨10.1063/1.3663533⟩. ⟨hal-00783377⟩

• Article dans une revue

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

F Medjdoub, Malek Zegaoui, N. Rolland, Paul-Alain Rolland

High quality AlN/GaN heterostructures grown on silicon substrate are demonstrated. It is found that high carrier concentration can be achieved whereas circular diodes showed a low leakage current up to 200 V reverse bias. 200 nm gate length AlN/GaN transistors exhibited a drain current density of 1…

Applied Physics Letters, 2011, 98 (22), pp.223502-1-3. ⟨10.1063/1.3595943⟩. ⟨hal-00603008⟩

• Article dans une revue

Thermal characterization of MBE-grown GaN/AlGaN/GaN device on single crystalline diamond

J. Kuzmik, S. Bychikhin, D. Pogany, E. Pichonat, O. Lancry, Christophe Gaquière, G. Tsiakatouras, G. Deligeorgis, A. Georgakilas

Self-heating effects in a molecular beam epitaxy-grown GaN/AlGaN/GaN structure on a single crystalline diamond is investigated. A transient interferometric method, in combination with a three dimensional model, is used to describe a pulsed operation of a transistor-like heater, and a micro-Raman…

Journal of Applied Physics, 2011, 109 (8), pp.086106. ⟨10.1063/1.3581032⟩. ⟨hal-00591315⟩

• Article dans une revue

Field-induced vortices in weakly anisotropic ferroelectrics

Anaïs Sené, Laurent Baudry, Igor A. Luk'Yanchuk, Laurent Delahoche, Y. El Amraoui

Superlattices and Microstructures, 2011, 49, pp.314-317. ⟨10.1016/j.spmi.2010.05.001⟩. ⟨hal-00574497⟩

• Communication dans un congrès

Nucleation of vortices structures in ferroelectrics

L. Baudry, A. Sene, Igor A. Luk'Yanchuk, L. Lahoche

Multifunctional Nanomaterials : Mediterranean - East Europe Meeting, NanoEuroMed 2011, 2011, Uzhgorod, Ukraine. ⟨hal-00807623⟩

• Communication dans un congrès

Experimental exploration of imaging properties of a two-dimensional flat lens made of phononic crystals

E.D. Manga, L. Haumesser, B. Morvan, E. Le Clezio, Anne-Christine Hladky

IEEE International Ultrasonics Symposium, IUS 2011, 2011, Orlando, FL, United States. pp.2491-2494, ⟨10.1109/ULTSYM.2011.0619⟩. ⟨hal-00799691⟩