Publications

Affichage de 901 à 910 sur 16064


  • Article dans une revue

Highlighting the role of 3C–SiC in the performance optimization of (Al,Ga)N‒based High‒Electron mobility transistors

Micka Bah, Daniel Alquier, Marie Lesecq, Nicolas Defrance, Damien Valente, Thi Huong Ngo, Eric Frayssinet, Marc Portail, Jean-Claude de Jaeger, Yvon Cordier

AlN nucleation layer is the key issue for the performance of GaN high frequency telecommunication and power switching systems fabricated after heteroepitaxy on Silicon or Silicon Carbide. In this work, we demonstrate and explain both the low level and the origin of propagation losses in GaN/3C–SiC/…

Materials Science in Semiconductor Processing, 2024, 171, pp.107977. ⟨10.1016/j.mssp.2023.107977⟩. ⟨hal-04378667⟩

  • Article dans une revue

Linking Cause and Effect: Nanoscale Vibrational Spectroscopy of Space Weathering from Asteroid Ryugu

Sylvain Laforet, Corentin Le Guillou, Francisco de la Peña, Michael Walls, Luiz H.G. Tizei, Maya Marinova, Pierre Beck, van T. H. Phan, Damien Jacob, Bahae-Eddine Mouloud, Daniel Hallatt, Mario Pelaez-Fernandez, Jean-Christophe Viennet, David Troadec, Takaaki Noguchi, Toru Matsumoto, Akira Miyake, Hisayoshi Yurimoto, Hugues Leroux

Abstract Airless bodies are subjected to space-weathering effects that modify the first few microns of their surface. Therefore, understanding their impact on the optical properties of asteroids is key to the interpretation of their color variability and infrared reflectance observations. The…, Les corps dépourvus d'atmosphère tels que les astéroïdes sont soumis à des effets d’altération spatiale qui modifient les premiers microns de leur surface. Par conséquent, la compréhension de leur impact sur les propriétés optiques de ces astéroïdes est essentielle pour l’interprétation de…

The Astrophysical Journal Letters, 2024, The Astrophysical Journal Letters, 963 (2), pp.L45. ⟨10.3847/2041-8213/ad2b65⟩. ⟨hal-04505901⟩

  • Article dans une revue

Control of microstructure and composition of reactively sputtered vanadium nitride thin films based on hysteresis curves and application to microsupercapacitors

Allan Lebreton, Marie-Paule Besland, Pierre-Yves Jouan, Tatiana Signe, Cédric Mannequin, Mireille Richard-Plouet, Maryline Le Granvalet, Christophe Lethien, Thierry Brousse, Jérémy Barbé

Vanadium nitride (VN) thin films were prepared by reactive DC magnetron sputtering of a vanadium target using nitrogen as reactive gas. The structural, morphological, and compositional evolution of these films is described based on hysteresis diagrams plotting the sputtering power versus nitrogen…

Journal of Vacuum Science & Technology A, 2024, 42 (2), pp.023405. ⟨10.1116/5.0177028⟩. ⟨hal-04423908⟩

  • N°spécial de revue/special issue

Guest Editorial: Special Issue on Wide and Ultrawide Band Gap Semiconductor Devices for RF and Power Applications

Matteo Meneghini, Geok Ing Ng, Farid Medjdoub, Matteo Buffolo, Shireen Warnock, Digbijoy Nath, Jun Suda, Junxia Shi, Shyh-Chiang Shen

IEEE Transactions on Electron Devices, 71 (3), pp.1340-1343, 2024, ⟨10.1109/TED.2024.3359934⟩. ⟨hal-04493325⟩