Publications

• Article dans une revue

Unprecedented robust antiferromagnetism in fluorinated hexagonal perovskites

M. Sturza, H. Kabbour, S. Daviero-Minaud, D. Filimonov, K. Pokholok, Nicolas Tiercelin, F. Porcher, L. Aldon, O. Mentre

Journal of the American Chemical Society, 2011, 133, pp.10901-10909. ⟨10.1021/ja2028603⟩. ⟨hal-00639870⟩

• Article dans une revue

Opening of simultaneous photonic and phononic band gap in two-dimensional square lattice periodic structure

Driss Bria, B. Assouar, Mourad Oudich, Yan Pennec, Jerome O. Vasseur, Bahram Djafari-Rouhani

We discuss two points related to the simultaneous existence of phononic and photonic band gaps in a two-dimensional crystal constituted by a square array of holes drilled in a matrix. In a first part, using the case of a sapphire sample in the microwave range, we show that in addition to the…

Journal of Applied Physics, 2011, 109 (1), pp.014507. ⟨10.1063/1.3530682⟩. ⟨hal-00579068⟩

• Article dans une revue

X-ray combined analysis of fiber-textured and epitaxial Ba(Sr,Ti)O3 thin films deposited by radio frequency sputtering

Denis Remiens, L. Yang, Freddy Ponchel, Jean-François Legier, D. Chateigner, Gang Wang, X. Dong

Journal of Applied Physics, 2011, 109, pp.114106-1-11. ⟨10.1063/1.3592282⟩. ⟨hal-00603029⟩

• Article dans une revue

Unipolar and bipolar operation of InAs/InSb nanowire heterostructure field-effect transistors

H.A. Nilsson, P. Caroff, E. Lind, M.E. Pistol, C. Thelander, L.E. Wernersson

Journal of Applied Physics, 2011, 110, pp.064510-1-4. ⟨10.1063/1.3633742⟩. ⟨hal-00639829⟩

• Communication dans un congrès

Study of pulse waveforms for testing in mode stirred reverberating chamber

V. Deniau, L. Kone, M. Ayad, B. Renoncourt, J. Rioult

EMC Europe 2011, 2011, York, United Kingdom. pp.778-783. ⟨hal-00800320⟩

• Communication dans un congrès

Strain relaxation of GaSb islands on GaP and GaAs substrates for highmobility AlSb/InAs heterostructures

S. El Kazzi, L. Desplanque, X. Wallart, Y. Wang, P. Ruterana

20th European Workshop on Heterostructure Technology, HeTech 2011, 2011, Villeneuve d'Ascq, France. pp.1-2. ⟨hal-00799994⟩

• Communication dans un congrès

First AlN/GaN HEMTs power measurement at 18 GHz on silicon substrate

F Medjdoub, Malek Zegaoui, Damien Ducatteau, N. Rolland, Paul-Alain Rolland

AlN/GaN heterostructure is an ideal candidate to push the limits of microwave GaN-based devices owing to the maximum theoretical spontaneous and piezoelectric difference between the epitaxial AlN barrier and the underlying GaN layer. If the tricky growth conditions of this binary can be controlled…

69th Device Research Conference, DRC 2011, Jun 2011, Santa Barbara, CA, United States. pp.219-220, ⟨10.1109/DRC.2011.5994506⟩. ⟨hal-00799973⟩

• Communication dans un congrès

Assessment of III-V MOSFET architectures for low power applications using static and dynamic numerical simulation

Minghua Shi, J. Saint-Martin, A. Bournel, D. Querlioz, P. Dollfus, J.J. Mo, Nicolas Wichmann, L. Desplanque, X. Wallart, Francois Danneville, S. Bollaert

37th IEEE International SOI Conference, SOI 2011, 2011, Tempe, AZ, United States. pp.1-2, ⟨10.1109/SOI.2011.6081701⟩. ⟨hal-00799795⟩

• Chapitre d'ouvrage

Low frequency acoustic devices for viscoelastic complex media characterization

Georges Nassar

Beghi M.G. Acoustic waves - From microdevices to helioseismology, InTech, Chapter 10, 213-238, 2011, ISBN 978-953-307-572-3. ⟨hal-00799656⟩

• Communication dans un congrès

Transmission electron microscopy of misfit dislocation and strain relaxation in lattice mismatched III-V heterostructures versus substrate surface treatment

Y. Wang, P. Ruterana, L. Desplanque, S. El Kazzi, X. Wallart

Materials Research Society Spring Meeting, MRS Spring 2011, Symposium D : Compound semiconductors for energy applications and environmental sustainability, 2011, San Francisco, CA, United States. pp.143-148, ⟨10.1557/opl.2011.841⟩. ⟨hal-00799993⟩