Publications

• Article dans une revue

Low temperature tunneling current enhancement in silicide/Si Schottky contacts with nanoscale barrier width

N. Reckinger, Xing Tang, Emmanuel Dubois, G. Larrieu, D. Flandre, J.P. Raskin, A. Afzalian

The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for nonsegregated contacts separated by micrometer-sized gaps. Still, an excess of…

Applied Physics Letters, 2011, 98 (11), pp.1121021. ⟨10.1063/1.3567546⟩. ⟨hal-00579075⟩

• Article dans une revue

Very low effective Schottky barrier height for erbium disilicide contacts on n-Si through arsenic segregation

N. Reckinger, C. Poleunis, Emmanuel Dubois, C.A. Dutu, X.H. Tang, A. Delcorte, J.P. Raskin

The segregation of As+ ions implanted into thin Er films deposited on n-Si substrates is studied after ErSi2−x formation. The same lowering of the effective Schottky barrier height (SBH) below 0.12 eV is obtained at moderate annealing temperatures, regardless of the redistribution of As dopants at…

Applied Physics Letters, 2011, 99 (1), pp.012110. ⟨10.1063/1.3608159⟩. ⟨hal-00639859⟩

• Article dans une revue

High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

S.R. Plissard, G. Larrieu, X. Wallart, P. Caroff

Nanotechnology, 2011, 22, pp.275602-1-7. ⟨10.1088/0957-4484/22/27/275602⟩. ⟨hal-00597081⟩

• Article dans une revue

Microwave properties of Bi1.5Zn1.0Nb1.5O7/Ba0.6Sr0.4TiO3 hetero layered films directly sputtered on Si up to 50 GHz

L.H. Yang, G.S. Wang, X.L. Dong, Freddy Ponchel, Denis Remiens

Journal of the American Ceramic Society, 2011, 94, pp.2262-2265. ⟨10.1111/j.1551-2916.2011.04610.x⟩. ⟨hal-00639934⟩

• Article dans une revue

Epitaxial GaAs for X-ray imaging

G. C. Sun, R. Rao, S. Makham, J. C. Bourgoin, X. Y. Zhang, R. Gohier, F. Masiello, J. Haertwig, J. Baruchel, C. Ponchut, Andrea Balocchi, Xavier Marie, O. Gilard, Isabelle Roch-Jeune, J. C. Pesant

To be used for X-ray imaging, semiconductor materials must exhibit good and uniform electronic properties. Epitaxial layers are therefore better adapted than bulk materials which contain dislocations, precipitates and point defects in variable concentrations depending on the growth mode and the…

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2011, 633 (1), pp.S65-S68. ⟨10.1016/j.nima.2010.06.123⟩. ⟨hal-01233828⟩

• Communication dans un congrès

Phase change memory as synapse for ultra-dense neuromorphic systems: application to complex visual pattern extraction

Manan Suri, Olivier Bichler, Damien Querlioz, Olga Cueto, Luca Perniola, Véronique Sousa, Dominique Vuillaume, Christian Gamrat, Barbara Desalvo

We demonstrate a unique energy efficient methodology to use Phase Change Memory (PCM) as synapse in ultra-dense large scale neuromorphic systems. PCM devices with different chalcogenide materials were characterized to demonstrate synaptic behavior. Multi-physical simulations were used to interpret…

IEEE International Electron Devices Meeting (IEDM 2011), Dec 2011, Washington, DC, United States. ⟨10.1109/IEDM.2011.6131488⟩. ⟨hal-00799997⟩

• Article dans une revue

Investigation of the negative differential resistance reproducibility in AlN/GaN double-barrier resonant tunnelling diodes

Mohamed Boucherit, Ali Soltani, Eva Monroy, Michel Rousseau, D. Deresmes, Maxime Berthe, Corentin Durand, Jean-Claude de Jaeger

AlN/GaN double-barrier resonant tunnelling diodes were grown by molecular beam epitaxy on GaN/sapphire template and processed into mesa diameters from 2 lm to 4 lm. The current-voltage characteristics were carried out in direct current operation and under-high vacuum. A sharp negative differential…

Applied Physics Letters, 2011, 99, pp.182109-1-3. ⟨10.1063/1.3659468⟩. ⟨hal-00783409⟩

• Article dans une revue

Mie resonance based left-handed metamaterial in the visible frequency range

L. Kang, D. Lippens

Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2011, 83, pp.195125-1-6. ⟨10.1103/PhysRevB.83.195125⟩. ⟨hal-00597076⟩

• Article dans une revue

Monte Carlo studies of the band-bending in GaAs/Al0.45Ga0.55As quantum-cascade laser

J. Konupek, P. Borowik, Jean-Luc Thobel, L. Adamowic

Photonics Letters of Poland, 2011, 3, pp.49-51. ⟨10.4302/plp.2011.2.02⟩. ⟨hal-00639912⟩

• Article dans une revue

Fabrication and characterization of an epitaxial graphene nanoribbon-based field-effect transistor

N. Meng, J.F. Fernandez, D. Vignaud, Gilles Dambrine, H. Happy

IEEE Transactions on Electron Devices, 2011, 58, pp.1594-1596. ⟨10.1109/TED.2011.2119486⟩. ⟨hal-00603002⟩